Design of Stictionfree - Lower Pull in Voltage RF MEMS Switch Using Varying Section Cantilever Beam

2011 ◽  
Vol 403-408 ◽  
pp. 4141-4147 ◽  
Author(s):  
M. Manivannan ◽  
R.Joseph Daniel ◽  
K. Sumangala
Keyword(s):  
Analytical Model ◽  
Cantilever Beam ◽  
Rf Mems ◽  
Spring Constant ◽  
Simulation Studies ◽  
Unit Load ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Design Flexibility ◽  
Beam Type

A new varying section cantilever beam type RF MEMS switch has been proposed. The main advantage of this switch is that it is inherently stiction free and therefore enhances design flexibility. An analytical model developed using unit load approach for the spring constant of the proposed switch has been presented and it has been shown that the spring constant and therefore the pull in voltage (Vpi) can be considerably reduced with the proposed switch. Simulation studies conducted on two groups of devices clearly demonstrate that the pull in voltage can be reduced by 26% with ten sections. Comparision of the pull in voltage obtained in the simulation studies for devices with the theoretically estimated Vpi shows that the spring constant model presented in this paper accurately estimates the spring constant. The results of analytical studies also demonstrate that the new proposed cantilever beam can considerably reduce the pull in voltage.

scholarly journals Cantilever Beam Metal-Contact MEMS Switch

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Adel Saad Emhemmed ◽  
Abdulmagid A. Aburwein
Keyword(s):  
Cantilever Beam ◽  
Rf Mems ◽  
Spring Constant ◽  
Metal Contact ◽  
Rf Mems Switch ◽  
Microelectromechanical System ◽  
Mems Switch ◽  
Integrated Method ◽  
Beam Geometry ◽  
Contact Switch

We present a new design of a miniature RF microelectromechanical system (MEMS) metal-contact switch and investigate various aspects associated with lowering the pull-down voltage and overcoming the stiction problem. Lowering the pull-down voltage in this design is based on reducing the spring constant by changing the cantilever beam geometry of the RF MEMS switch, and the stiction problem is overcome by a simple integrated method using two tiny posts located on the substrate at the free end of the cantilever beam.

scholarly journals Low Actuation Voltage RF MEMS Switch Using Varying Section Composite Fixed-Fixed Beam

2014 ◽  
Vol 2014 ◽  
pp. 1-12 ◽  
Author(s):  
M. Manivannan ◽  
R. Joseph Daniel ◽  
K. Sumangala
Keyword(s):  
Young’S Modulus ◽  
Rf Mems ◽  
Young's Modulus ◽  
Actuation Voltage ◽  
Spring Constant ◽  
Simulation Studies ◽  
Restoring Force ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Fixed Beam

The present authors have earlier reported the employment of varying section fixed-fixed beam for achieving lower pull-in voltage with marginal fall in restoring force. Reducing Young’s modulus also reduces the pull-in voltage but with lesser degree of reduction in restoring force. Composite beams are ideal alternatives to achieve decreased Young’s modulus. Hence new varying section composite fixed-fixed beam type RF MEMS switch has been proposed. The main advantage of this RF MEMS switch is that lower pull-in voltages can be achieved with marginal fall in stiction immunity. Spring constant of the proposed switch has been obtained using simulation studies and it has been shown that the spring constant and therefore the pull-in voltage (Vpi) can be considerably reduced with the proposed switch. Simulation studies conducted on the proposed switch clearly demonstrate that the pull-in voltage can be reduced by 31.17% when compared to the varying section monolayer polysilicon fixed-fixed beam. Further this approach enables the designer to have more freedom to design lower pull-in voltage switches with improved stiction immunity.

A Feasibility Study on Micro Silicon Cantilever Beam for High Isolation RF MEMS Switch

2007 ◽  
Author(s):  
Lingling Lin ◽  
Feiyan Chen ◽  
Guoqing Hu ◽  
Wenyan Liu ◽  
Baihai Wu
Keyword(s):  
Cantilever Beam ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Dielectric Materials ◽  
Rf Mems Switch ◽  
High Isolation ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Silicon Cantilever ◽  
High Contact Force

This paper presents a novel electrostatically actuated microelectromechanical switch. The structure of cantilever beam with electrodes sandwiched between Si and SiO2 layers has been established. Placing the pull-down electrodes outside the switching contact, the actuation voltage can be reduced while keeping high contact force and restoration force. The top and bottom dielectric materials separated two conducting electrodes when actuated. Thus, the reliability and the performance of the switch have been greatly improved. The charts of the deflection of the cantilever beam with respect to the voltage have been simulated with the MATLAB computer programming language.

scholarly journals Design and Analysis of a Uniform Meander RF MEMS Switch

2021 ◽  
Vol 12 (5) ◽  
pp. 587-595
Author(s):  
C Leela Mohan, K Ch Sri Kavya, K Sarat Kumar
Keyword(s):  
Dielectric Layer ◽  
Rf Mems ◽  
Spring Constant ◽  
Optimization Process ◽  
Materials Selection ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Switch Design ◽  
Selection For

This paper projected to uniform meander RF MEMS capacitive shunt switch design and analysis. The less pull in voltage is obtained in flexure type membrane by proposed RF MEMS Switch. The materials selection for the dielectric layer and beam is explained in this paper and also shown the performance depends on materials utilized for the design. The good isolation of -31dB  is achieved for the pull-in voltage of 11.97V with a spring constant of 2.38N/m is produced by the switch and is obtained by the optimization process at a frequency of 38GHz.

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