scholarly journals Design and Analysis of a Uniform Meander RF MEMS Switch

2021 ◽  
Vol 12 (5) ◽  
pp. 587-595
Author(s):  
C Leela Mohan, K Ch Sri Kavya, K Sarat Kumar
Keyword(s):  
Dielectric Layer ◽  
Rf Mems ◽  
Spring Constant ◽  
Optimization Process ◽  
Materials Selection ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Switch Design ◽  
Selection For

This paper projected to uniform meander RF MEMS capacitive shunt switch design and analysis. The less pull in voltage is obtained in flexure type membrane by proposed RF MEMS Switch. The materials selection for the dielectric layer and beam is explained in this paper and also shown the performance depends on materials utilized for the design. The good isolation of -31dB  is achieved for the pull-in voltage of 11.97V with a spring constant of 2.38N/m is produced by the switch and is obtained by the optimization process at a frequency of 38GHz.

scholarly journals Cantilever Beam Metal-Contact MEMS Switch

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Adel Saad Emhemmed ◽  
Abdulmagid A. Aburwein
Keyword(s):  
Cantilever Beam ◽  
Rf Mems ◽  
Spring Constant ◽  
Metal Contact ◽  
Rf Mems Switch ◽  
Microelectromechanical System ◽  
Mems Switch ◽  
Integrated Method ◽  
Beam Geometry ◽  
Contact Switch

We present a new design of a miniature RF microelectromechanical system (MEMS) metal-contact switch and investigate various aspects associated with lowering the pull-down voltage and overcoming the stiction problem. Lowering the pull-down voltage in this design is based on reducing the spring constant by changing the cantilever beam geometry of the RF MEMS switch, and the stiction problem is overcome by a simple integrated method using two tiny posts located on the substrate at the free end of the cantilever beam.

scholarly journals Optimization of shunt capacitive RF MEMS switch by using NSGA-II algorithm and uti-liti algorithm

2019 ◽  
pp. 43-50
Keyword(s):  
Return Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Design System ◽  
Nsga Ii ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Axial Residual Stress ◽  
Switch Design ◽  
Design Requirements

The present paper aimed at designing, optimizing, and simulating the RF MEMS Switch which is stimulated electrostatically. The design of the switch is located on the CoplanarWaveguide (CPW) transmission line. The pull-in voltage of the switch was 2V and the axial residual stress of the proposed design was obtained at 23MPa. In order to design and optimize the geometric structure of the switch, the desired model was extracted based on the objective functions of the actuation voltage and the return loss up-state and also the isolation down-state using the mathematical programming. Moreover, the model was solved by the NSGA-II meta-heuristic algorithm in MATLAB software. In addition, the design requirements and the appropriate levels for designing the switch were obtained by presenting the Pareto front from the beam actuation voltage and also the return loss up-state and isolation down-state. Finally, the RF parameters of the switch were calculated as S11=-2.54dB and S21=-33.18dB at the working frequency of 40GHz by extracting the appropriate parameters of the switch design through simulating a switch designed by the COMSOL Multiphysics software 4.4a and the advanced design system (ADS).

scholarly journals Design and Analysis of a Non-Uniform Meander RF MEMS Switch

2021 ◽  
Vol 9 (2) ◽  
pp. 756-767
Author(s):  
C Leela Mohan, Et. al.
Keyword(s):  
Dielectric Layer ◽  
Rf Mems ◽  
Coplanar Waveguides ◽  
Rf Mems Switch ◽  
High Isolation ◽  
Mems Switch ◽  
Power Handling ◽  
Mems Technology ◽  
Rf Signal ◽  
Selection Of

This paper aimed to design and analysis of non-uniform meander capacitive shunt RF MEMS switch. The less pull in voltage is obtained in flexure type membrane by proposed RF MEMS Switch. The selection of materials for the beam and dielectric layer is expressed in this paper and also shown the performance depends on materials utilized for the design. The high isolation of -31.15dB actuating at the pull-in voltage of 7.69V with a spring constant of 3.28N/m produced the switch and is obtained by the optimization process. Capacitive contact switches have capability of power handling. The actuated switch state provides an excellent isolation. It shorts the ground by RF signal. MEMS technology is the integration of electrical and mechanical components on single platform i.e. substrate [10]. From the literature, various researchers have proposed different RF MEMS Switch, but still there few challenges on optimization of the Switch for best performance. The electromechanical analysis such as Upstate, Downstate capacitances and stress analysis have been carried out. The performance of the switch is analyzed by taking appropriate materials selected by Ashby’s approach. These optimized dimensions are feasible to fabricate. The substrate height, material for the substrate and coplanar waveguides are used for the impendence matching. For obtaining the less pull in voltage overlapping area is to be increased.

Material selection methodology for RF MEMS switch design

2021 ◽  
Author(s):  
Andrey M. Belevtsev ◽  
Irina K. Epaneshnikova ◽  
Ivan O. Dryagin ◽  
Vasily L. Kryuchkov ◽  
Vladimir F. Lukichev ◽  
...  
Keyword(s):  
Rf Mems ◽  
Material Selection ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Switch Design ◽  
Selection Methodology
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