Silicon Float Zone Single Crystal Automatic Growth

2012 ◽  
Vol 430-432 ◽  
pp. 361-364
Author(s):  
Li Hui Jin ◽  
Yu Tian Wang ◽  
Hao Ping Shen ◽  
Jia Liu ◽  
Chun Geng Yang ◽  
...  

As basis of the big diameter crystal development, the single crystal automatic growth is the most important technique for system standardization and mass production. In this article, author introduced a new useful way for the single crystal automatic growth of float zone. By setting the growth interval and controlling parameter, PLC controller could automatically control the single crystal growth when the single crystal’s diameter is greater than 50mm. This method applied to the machine system can greatly reduce the fault of manual operation as well as labor intensity. Also it improved the single crystal quality which increases the ability to develop big diameter single crystal in the future.

2019 ◽  
Vol 963 ◽  
pp. 38-41
Author(s):  
Jung Woo Choi ◽  
Jung Gyu Kim ◽  
Byung Kyu Jang ◽  
Sang Ki Ko ◽  
Myung Ok Kyun ◽  
...  

4H-SiC single crystal was successfully grown with source powder modified by the pretreatment process in order to improve polytype stability of SiC crystal. To increase C/Si ratio in SiC source powder, SiC source powder was mixed with liquid carbon source and then pre-heated at 1200°C. SiC single crystal grown with modified source powder exhibited complete 4H polytype and the crystal quality of SiC crystal grown by modified source power was definitely better than conventional source powder


2019 ◽  
Vol 963 ◽  
pp. 46-50
Author(s):  
Jeong Min Choi ◽  
Chae Young Lee ◽  
Dae Sung Kim ◽  
Mi Seon Park ◽  
Yeon Suk Jang ◽  
...  

The present research was focused on the effect of porous graphite plate in TaC-coated crucible on crystal quality and resistivity of semi-insulating SiC crystals. Two SiC crystals grown with/without porous graphite plate in TaC-coated crucible were systematically compared. 6H-SiC polytype was obtained on both crystals regardless of porous graphite plate. The quality of SiC crystal grown using porous graphite plate placed in the TaC-coated crucible was slightly better than SiC crystal without porous graphite plate. SiC crystals having an average resistivity value of about 1×1010 Ωcm were obtained. In the result of COREMA measurement, the use of porous graphite plate tends to obtain wafers with better uniformity in resistivity value.


2009 ◽  
Vol 45 (4) ◽  
pp. 549-556 ◽  
Author(s):  
K. Lācis ◽  
◽  
A. Muižnieks ◽  
N. Jēkabsons ◽  
A. Rudevičs ◽  
...  

2021 ◽  
pp. 2006601
Author(s):  
Soo Ho Choi ◽  
Hyung‐Jin Kim ◽  
Bumsub Song ◽  
Yong In Kim ◽  
Gyeongtak Han ◽  
...  

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