New Materials for Semi-Insulating SiC Single Crystal Growth by PVT Method

2019 ◽  
Vol 963 ◽  
pp. 46-50
Author(s):  
Jeong Min Choi ◽  
Chae Young Lee ◽  
Dae Sung Kim ◽  
Mi Seon Park ◽  
Yeon Suk Jang ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Crystal Quality ◽  
New Materials ◽  
Graphite Plate ◽  
Porous Graphite ◽  
Better Than

The present research was focused on the effect of porous graphite plate in TaC-coated crucible on crystal quality and resistivity of semi-insulating SiC crystals. Two SiC crystals grown with/without porous graphite plate in TaC-coated crucible were systematically compared. 6H-SiC polytype was obtained on both crystals regardless of porous graphite plate. The quality of SiC crystal grown using porous graphite plate placed in the TaC-coated crucible was slightly better than SiC crystal without porous graphite plate. SiC crystals having an average resistivity value of about 1×1010 Ωcm were obtained. In the result of COREMA measurement, the use of porous graphite plate tends to obtain wafers with better uniformity in resistivity value.

Polytype Control by Pretreatment of SiC Source Powder for 4H-SiC Single Crystal Growth

2019 ◽  
Vol 963 ◽  
pp. 38-41
Author(s):  
Jung Woo Choi ◽  
Jung Gyu Kim ◽  
Byung Kyu Jang ◽  
Sang Ki Ko ◽  
Myung Ok Kyun ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Carbon Source ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Crystal Quality ◽  
Liquid Carbon ◽  
Source Power ◽  
Better Than

4H-SiC single crystal was successfully grown with source powder modified by the pretreatment process in order to improve polytype stability of SiC crystal. To increase C/Si ratio in SiC source powder, SiC source powder was mixed with liquid carbon source and then pre-heated at 1200°C. SiC single crystal grown with modified source powder exhibited complete 4H polytype and the crystal quality of SiC crystal grown by modified source power was definitely better than conventional source powder

The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT

2013 ◽  
Vol 740-742 ◽  
pp. 77-80
Author(s):  
Jung Young Jung ◽  
Sang Il Lee ◽  
Mi Seon Park ◽  
Doe Hyung Lee ◽  
Hee Tae Lee ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Single Crystals ◽  
Crystal Quality ◽  
Full Width ◽  
Half Maximum ◽  
Radial Temperature Gradient ◽  
Radial Temperature ◽  
Better Than

The present research was focused to investigate the effect of internal crucible design that influenced the 4H-SiC crystal growth onto a 6H-SiC seed by PVT method. The crucible design was modified to produce a uniform radial temperature gradient in the growth cell. The seed attachment was also modified with a use of polycrystalline SiC plate. The crystal quality of 4H-SiC single crystals grown in modified crucible and grown with modified seed attachment was revealed to be better than that of crystal grown in conventional crucible. The full width at half maximum (FWHM) values of grown SiC crystals in the conventional crucible, the modified seed attachment and the modified crucible were 285 arcsec, 134 arcsec and 128 arcsec, respectively. The micropipe density (MPD) of grown SiC crystals in the conventional crucible, the modified seed attachment and the modified crucible were 101ea/cm^2, 81ea/cm^2 and 42ea/cm^2, respectively.

Effect of Marangoni Convection on InSb Single Crystal Growth by Horizontal Bridgman Method

2001 ◽  
Vol 692 ◽  
Author(s):  
K. Kodera ◽  
A. Kinoshita ◽  
K. Arafune ◽  
Y. Nakae ◽  
A. Hirata
Keyword(s):  
Crystal Growth ◽  
Binary System ◽  
Temperature Gradient ◽  
Single Crystal ◽  
Grown Crystal ◽  
Marangoni Convection ◽  
Single Crystal Growth ◽  
Control Technique ◽  
Growth System

AbstractIt is necessary to clarify the effect of Marangoni convection on single crystal growth from a melt in order to improve the quality of the grown crystal. Particularly, the deviation of crystalmelt (C-M) interface from a planar shape is a major problem because it may deteriorate the quality of the grown crystal. In this paper, we investigated the effect of thermal and solutal Marangoni convection on C-M interface shape in an In-Sb binary system by the horizontal Bridgman (HB) method. The C-M interface concavity strongly depends on the cooling rate and the temperature gradient under uniform concentration distribution conditions in the melt. A large concavity was observed at low cooling rates and high temperature gradient conditions. The concavity was found to be caused by thermal Marangoni convection, by taking Péclet number into account. Then, we varied the composition of the In-Sb binary system to induce solutal Marangoni convection intentionally. The C-M interface was kept planar in case solutal Marangoni convection occurred in the direction opposite to the thermal one. Therefore, we believe that the utilization of solutal Marangoni convection will be a new control technique to make the C-M interface planar for the HB system. From these results, it was clarified that Marangoni convection plays a significant role in the HB crystal growth system.

Silicon Float Zone Single Crystal Automatic Growth

2012 ◽  
Vol 430-432 ◽  
pp. 361-364
Author(s):  
Li Hui Jin ◽  
Yu Tian Wang ◽  
Hao Ping Shen ◽  
Jia Liu ◽  
Chun Geng Yang ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Mass Production ◽  
Single Crystal Growth ◽  
Crystal Quality ◽  
Labor Intensity ◽  
Manual Operation ◽  
Machine System ◽  
Float Zone ◽  
Controlling Parameter

As basis of the big diameter crystal development, the single crystal automatic growth is the most important technique for system standardization and mass production. In this article, author introduced a new useful way for the single crystal automatic growth of float zone. By setting the growth interval and controlling parameter, PLC controller could automatically control the single crystal growth when the single crystal’s diameter is greater than 50mm. This method applied to the machine system can greatly reduce the fault of manual operation as well as labor intensity. Also it improved the single crystal quality which increases the ability to develop big diameter single crystal in the future.

Effect of Porous Graphite for High Quality SiC Crystal Growth by PVT Method

2015 ◽  
Vol 821-823 ◽  
pp. 43-46 ◽  
Author(s):  
Hee Jun Lee ◽  
Hee Tae Lee ◽  
Hee Won Shin ◽  
Mi Seon Park ◽  
Yeon Suk Jang ◽  
...  
Keyword(s):  
Source Material ◽  
Vapor Transport ◽  
Radial Temperature Gradient ◽  
Dendrite Structure ◽  
Radial Temperature ◽  
Graphite Plate ◽  
Porous Graphite ◽  
Transport Method ◽  
Better Than

The effect of the porous graphite plate above the source material on properties of silicon carbide (SiC) crystals grown by Physical Vapor Transport method has been investigated. The porous graphite plate was inserted on source powder to produce a more C-rich for the polytype stability of 4H-SiC crystal and a uniform radial temperature gradient. The dendrite structure obtained from SiC source powder in the crucible with porous graphite plate was more densely formed than that in the conventional crucible. The crystal quality of 4H-SiC single crystals grown in porous graphite inserted crucible was revealed to be better than that of crystal grown SiC crystals in the conventional crucible.

Purification and Size Control of AlN Powder for AlN Single Crystal Growth

2014 ◽  
Vol 804 ◽  
pp. 107-110 ◽  
Author(s):  
Kang Huk Lee ◽  
Seong Min Jeong ◽  
Woo Teck Kwon ◽  
Soo Ryong Kim ◽  
Dong Geun Shin ◽  
...  
Keyword(s):  
Particle Size ◽  
Crystal Growth ◽  
Single Crystal ◽  
Size Control ◽  
Single Crystal Growth ◽  
Initial Particle ◽  
Large Particle Size ◽  
Thermocyclic Treatment ◽  
Metallic Impurities

AlN single crystal can be grown by physical vapor transport (PVT) method. The purity and particle size of the source material are important factors for single crystal growth to obtain good quality of AlN single crystal. The aim of this study was purification of AlN powder and growth of its particle size through thermocyclic treatment. The initial particle size was about 1.0 μm and the purity was 98.4% containing 1.6% oxygen and metallic impurities such as Fe, Sn, Ca, Na and Mg etc. which were analyzed based on KSL1612. For purification of AlN powder, it was performed using a thermocycle process with various thermocyclic numbers. After the thermocycle treatment, it is able to obtain large particle size AlN powder as much as 30μm and purity was increased to 99.6% based on chemical analysis.

New Crucible Design for SiC Single Crystal Growth by Sublimation

2000 ◽  
Vol 640 ◽  
Author(s):  
Shin-ichi Nishizawa ◽  
Hirotaka Yamaguchi ◽  
Tomohisa Kato ◽  
M. Nasir Khan ◽  
Kazuo Arai ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Growth Rate ◽  
Crystal Growth ◽  
Single Crystal ◽  
Flat Surface ◽  
Single Crystal Growth ◽  
Crystal Growth Rate ◽  
Bulk Single Crystal ◽  
High Quality ◽  
Better Than

ABSTRACTSiC bulk single crystal growth by sublimation was investigated. A new crucible design, double-walled crucible, was proposed, and its effect was confirmed numerically and experimentally. On the point of heat transfer in a growth cavity, double-walled crucible is better than conventional crucible. With a double-walled crucible, temperature of seed and source surfaces could be kept constant with better uniformity than that with a conventional crucible. It was deduced that a crystal growth rate could be kept constant with flat surface. Furthermore, in case of a double walled crucible, crystal enlarged rapidly with less inclusion. As the results, a double-walled crucible is useful to grow high quality SiC single crystal by sublimation.

scholarly journals Vanadium-doped semi-insulating SiC single crystal growth by using porous graphite

2016 ◽  
Vol 26 (6) ◽  
pp. 215-219
Author(s):  
Dong-Hun Lee ◽  
Hwang-Ju Kim ◽  
Young-Gon Kim ◽  
Su-Hun Choi ◽  
Mi-Seon Park ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Porous Graphite

Fabrication and Electrical Properties of MBE Grown Metal-Gallium and Metal-Arsenic Compounds on Ga1-xAlxAs

1988 ◽  
Vol 144 ◽  
Author(s):  
C.J. Palmstrøm ◽  
K.C. Garrison ◽  
B.-O. Fimland ◽  
T. Sands ◽  
R.A. Bartynski
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystal Growth ◽  
Single Crystal ◽  
Schottky Barrier ◽  
Single Crystal Growth ◽  
Arsenic Compounds ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTFilms of CoGa and CoAs have been deposited on Ga1-xAlxAs surfaces. CoAs films were found to be highly textured, but not single crystal. For CoGa films, however, single crystal growth was observed. The crystalline quality of the (100) oriented CoGa was good as determined by Rutherford backscattering with channeling measurements (χmin ∼7%) and cross-sectional transmission electron microscopy. Schottky barrier diodes fabricated from (100)CoGa/Ga1-xAlxAs and CoAs/Ga1-xAlxAs showed good characteristics with low ideality factors, n<1.15. Good Schottky barrier behavior was also found for (100)ErAs/GaAs structures.

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