Kinetics Study of Aluminum Deposition on Inner Wall of Pipes by Atomic Layer Deposition

2012 ◽  
Vol 482-484 ◽  
pp. 627-632
Author(s):  
Heng Liu ◽  
Yu Qing Xiong ◽  
Ji Zhou Wang
Keyword(s):  
Crystal Structure ◽  
Atomic Layer Deposition ◽  
Gas Adsorption ◽  
Atomic Layer ◽  
Wave Guide ◽  
Kinetics Study ◽  
Kinetics Equation ◽  
Deposition Cycle ◽  
Layer Deposition ◽  
Aluminum Deposition

In this paper, feasibility of aluminium deposition on inner wall of pipes by atomic layer deposition was studied. Firstly, by solving kinetics equation of gas adsorption on the pipe inner wall, the time for the reactant to reach saturated adsorption on the wall was calculated. Secondly, according to the aluminium crystal structure, the thickness of each deposition cycle was obtained. Finally, the minimum aluminium thickness and number of atomic layer deposition cycles that can meet electromagnetic requirement of wave guide was calculated.

scholarly journals Overall reaction mechanism for a full atomic layer deposition cycle of W films on TiN surfaces: first-principles study

RSC Advances ◽  
2018 ◽  
Vol 8 (68) ◽  
pp. 39039-39046 ◽  
Author(s):  
Hwanyeol Park ◽  
Sungwoo Lee ◽  
Ho Jun Kim ◽  
Daekwang Woo ◽  
Jong Myeong Lee ◽  
...  
Keyword(s):  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
First Principles ◽  
Dft Calculation ◽  
Atomic Layer ◽  
Deposition Cycle ◽  
Atomic Layer Deposition Cycle ◽  
First Principles Study ◽  
Layer Deposition ◽  
Dissociative Reactions

We investigated the overall ALD reaction mechanism for W deposition on TiN surfaces based on DFT calculation as well as the detailed dissociative reactions of WF6.

scholarly journals Study of the crystal structure of SnS thin films by atomic layer deposition

AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035144
Author(s):  
Xizhu Zhao ◽  
Luke M. Davis ◽  
Xiabing Lou ◽  
Sang Bok Kim ◽  
Soňa Uličná ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Sns Thin Films

scholarly journals Evolution of Crystal Structure During the Initial Stages of ZnO Atomic Layer Deposition

2016 ◽  
Vol 28 (2) ◽  
pp. 592-600 ◽  
Author(s):  
R. Boichot ◽  
L. Tian ◽  
M.-I. Richard ◽  
A. Crisci ◽  
A. Chaker ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Effect of crystal structure on optical properties of TiO2 films grown by atomic layer deposition

1997 ◽  
Vol 305 (1-2) ◽  
pp. 270-273 ◽  
Author(s):  
Jaan Aarik ◽  
Aleks Aidla ◽  
Alma-Asta Kiisler ◽  
Teet Uustare ◽  
Väino Sammelselg
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tio2 Films ◽  
Layer Deposition

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

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