scholarly journals Overall reaction mechanism for a full atomic layer deposition cycle of W films on TiN surfaces: first-principles study

RSC Advances ◽  
2018 ◽  
Vol 8 (68) ◽  
pp. 39039-39046 ◽  
Author(s):  
Hwanyeol Park ◽  
Sungwoo Lee ◽  
Ho Jun Kim ◽  
Daekwang Woo ◽  
Jong Myeong Lee ◽  
...  
Keyword(s):  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
First Principles ◽  
Dft Calculation ◽  
Atomic Layer ◽  
Deposition Cycle ◽  
Atomic Layer Deposition Cycle ◽  
First Principles Study ◽  
Layer Deposition ◽  
Dissociative Reactions

We investigated the overall ALD reaction mechanism for W deposition on TiN surfaces based on DFT calculation as well as the detailed dissociative reactions of WF6.

scholarly journals First-principles study of the surface reactions of aminosilane precursors over WO3(001) during atomic layer deposition of SiO2

RSC Advances ◽  
2020 ◽  
Vol 10 (28) ◽  
pp. 16584-16592
Author(s):  
Kyungtae Lee ◽  
Youngseon Shim
Keyword(s):  
Atomic Layer Deposition ◽  
First Principles ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Reaction Pathways ◽  
Energy Diagram ◽  
First Principles Study ◽  
Layer Deposition

Energy diagram of reaction pathways for decomposition of different aminosilane precursors on a WO3 (001) surface.

scholarly journals Dissociation reaction of B2H6 on TiN surfaces during atomic layer deposition: first-principles study

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 55750-55755 ◽  
Author(s):  
Hwanyeol Park ◽  
Sungwoo Lee ◽  
Ho Jun Kim ◽  
Euijoon Yoon ◽  
Gun-Do Lee
Keyword(s):  
Atomic Layer Deposition ◽  
First Principles ◽  
Atomic Layer ◽  
Fabrication Process ◽  
Device Performance ◽  
Memory Devices ◽  
Dissociation Reaction ◽  
First Principles Study ◽  
Layer Deposition

In the fabrication process of memory devices, a void-free tungsten (W) gate process with good conformability is very important for improving the conductivity of the W gate, leading to enhancement of device performance.

Modulation of the adsorption chemistry of a precursor in atomic layer deposition to enhance the growth per cycle of a TiO2 thin film

2021 ◽  
Author(s):  
Yeonchoo Cho ◽  
Sang Hyeon Kim ◽  
Byung Seok Kim ◽  
Youngjin Kim ◽  
Woojin Jeon
Keyword(s):  
Thin Film ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Chemical Reaction ◽  
Tio2 Thin Film ◽  
Dft Calculation ◽  
Atomic Layer ◽  
Growth Behaviour ◽  
Chemical Reaction Mechanism ◽  
Layer Deposition

This study investigates the chemical reaction mechanism of the ALD to obtain a designated growth behaviour in theoretical and experimental way, hence, provides significant implications for understanding the ALD mechanism based on the DFT calculation.

First-Principles Study of a Full Cycle of Atomic Layer Deposition of SiO2Thin Films with Di(sec-butylamino)silane and Ozone

2013 ◽  
pp. 130911145338002 ◽  
Author(s):  
Liang Huang ◽  
Bo Han ◽  
Bing Han ◽  
Agnes Derecskei-Kovacs ◽  
Manchao Xiao ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
First Principles ◽  
Atomic Layer ◽  
First Principles Study ◽  
Layer Deposition

Atomic layer deposition of hafnium oxide: A detailed reaction mechanism from first principles

2002 ◽  
Vol 117 (5) ◽  
pp. 1931-1934 ◽  
Author(s):  
Yuniarto Widjaja ◽  
Charles B. Musgrave
Keyword(s):  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
First Principles ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Detailed Reaction Mechanism

Geometric and electronic structures of iridium(III) acetylacetonate in atomic layer deposition of iridium: a first-principles study

2017 ◽  
Vol 4 (10) ◽  
pp. 106403 ◽  
Author(s):  
Hengjiao Gao ◽  
Yuqing Xiong ◽  
Dongcai Zhao ◽  
Lanxi Wang ◽  
Jinxiao Wang
Keyword(s):  
Atomic Layer Deposition ◽  
First Principles ◽  
Electronic Structures ◽  
Atomic Layer ◽  
First Principles Study ◽  
Layer Deposition

scholarly journals First principles study of the atomic layer deposition of alumina by TMA–H2O-process

2015 ◽  
Vol 17 (26) ◽  
pp. 17322-17334 ◽  
Author(s):  
Timo Weckman ◽  
Kari Laasonen
Keyword(s):  
Atomic Layer Deposition ◽  
First Principles ◽  
Reaction Mechanisms ◽  
Density Functional ◽  
Atomic Layer ◽  
Functional Study ◽  
Density Functional Study ◽  
First Principles Study ◽  
Layer Deposition

A comprehensive density functional study on the reaction mechanisms during the atomic layer deposition of alumina via trimethylaluminium–waterprocess.

Reaction Mechanism of Atomic Layer Deposition of Aluminum Sulfide using Trimethylaluminum and Hydrogen Sulfide

2021 ◽  
Author(s):  
Yanghong Yu ◽  
Zhongchao Zhou ◽  
Lina Xu ◽  
Yihong Ding ◽  
Guoyong Fang
Keyword(s):  
Hydrogen Sulfide ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Metal Sulfides ◽  
Layer Deposition

Atomic layer deposition (ALD) is a nanopreparation technique for materials and is widely used in the fields of microelectronics, energy and catalysis. ALD methods for metal sulfides, such as Al2S3...

Reaction Mechanism of Pt Atomic Layer Deposition on Various Textile Surfaces

2019 ◽  
Vol 31 (21) ◽  
pp. 8995-9002
Author(s):  
Il-Kwon Oh ◽  
Jong Seo Park ◽  
Mohammad Rizwan Khan ◽  
Kangsik Kim ◽  
Zonghoon Lee ◽  
...  
Keyword(s):  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Kinetics Study of Aluminum Deposition on Inner Wall of Pipes by Atomic Layer Deposition

2012 ◽  
Vol 482-484 ◽  
pp. 627-632
Author(s):  
Heng Liu ◽  
Yu Qing Xiong ◽  
Ji Zhou Wang
Keyword(s):  
Crystal Structure ◽  
Atomic Layer Deposition ◽  
Gas Adsorption ◽  
Atomic Layer ◽  
Wave Guide ◽  
Kinetics Study ◽  
Kinetics Equation ◽  
Deposition Cycle ◽  
Layer Deposition ◽  
Aluminum Deposition

In this paper, feasibility of aluminium deposition on inner wall of pipes by atomic layer deposition was studied. Firstly, by solving kinetics equation of gas adsorption on the pipe inner wall, the time for the reactant to reach saturated adsorption on the wall was calculated. Secondly, according to the aluminium crystal structure, the thickness of each deposition cycle was obtained. Finally, the minimum aluminium thickness and number of atomic layer deposition cycles that can meet electromagnetic requirement of wave guide was calculated.

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