Fatigue and Ferroelectric Properties of Bi3.25Gd0.75Ti2.97V0.03O12

2012 ◽  
Vol 624 ◽  
pp. 170-173
Author(s):  
J.G. Liu ◽  
X.A. Mei ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Solid State ◽  
Electric Field ◽  
Solid State Reaction ◽  
Coercive Field ◽  
Perovskite Structure ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Layered Perovskite Structure

Bi3.25Gd0.75Ti2.97V0.03O12 (BGTV) ceramics were prepared by solid state reaction. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. The remanent polarization and the coercive field of the BGTV were 24μC/cm2 and 65kV/cm at an electric field of 100kV/cm, respectively. These ferroelectric properties of BGTV are superior to V-doped Bi4Ti3O12 (~20μC/cm2 and 80kV/cm) and (Sr, Ta)-doped Bi4Ti3O12 (~12μC/cm2 and 71kV/cm) ceramics. In addition, the dense ceramics of BGTV could be obtained by sintering at temperatures 100─200°C lower than those of the SrBi2Ta2O9 system.

Ferroelectric Properties of Bi3.25Ho0.75Ti2.97V0.03O12

2014 ◽  
Vol 633 ◽  
pp. 362-365
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
C.Q. Huang
Keyword(s):  
Solid State ◽  
Dielectric Permittivity ◽  
Curie Temperature ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Dissipation Factor ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Layered Perovskite Structure

Bi3.25Ho0.75Ti2.97V0.03O12(BHTV) ceramics was prepared by solid state reaction. This sample had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. BHTV caused a large shift of the Curie temperature ( TC) of Bi4Ti3O12(BIT) from 675 °C to 398 °C. The remanent polarization and the coercive field of the BHTV ceramics were 28μC/cm2and 56kV/cm at an electric field of 90kV/cm, respectively. Furthermore, the dielectric permittivity and dissipation factor were 298 and 2.8×10-3at 1MHz, respectively. These ferroelectric properties of BHTV ceramics are superior to V-doped Bi4Ti3O12(~20μC/cm2and 80kV/cm) and (Sr, Ta)-doped Bi4Ti3O12(~12μC/cm2and 71kV/cm) ceramics. In addition, the dense ceramics of BHTV could be obtained by sintering at temperatures 100─200 °C lower than those of the SrBi2Ta2O9system.

Dielectric and Ferroelectric Properties of Bi2.9Pr0.9Ti2.97V0.03O12

2012 ◽  
Vol 624 ◽  
pp. 166-169 ◽  
Author(s):  
J.G. Liu ◽  
X.A. Mei ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Solid State ◽  
Room Temperature ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Dissipation Factor ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Layered Perovskite Structure ◽  
Curie Temperature Tc

Bi2.9Pr0.9Ti2.97V0.03O12 (BPTV) ceramics were prepared by solid state reaction. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. BPTV caused a large shift of the Curie temperature ( TC ) of Bi4Ti3O12 (BIT) from 675°C to 385°C. The remanent polarization and the coercive field of the BLTV were 31μC/cm2 and 60kV/cm at an electric field of 100kV/cm, respectively. Furthermore, the dielectric permittivity and dissipation factor were 300 and 3.3×10-3 at 1MHz, at 1V and at room temperature, respectively. These ferroelectric properties of BPTV are superior to V-doped Bi4Ti3O12 (~20μC/cm2 and 80kV/cm) and (Sr, Ta)-doped Bi4Ti3O12 (~12μC/cm2 and 71kV/cm) ceramics. In addition, the dense ceramics of BPTV could be obtained by sintering at temperatures 100─200°C lower than those of the SrBi2Ta2O9 system.

Ferroelectric Properties of Bi3.25La0.75Ti2.97V0.03O12

2011 ◽  
Vol 412 ◽  
pp. 310-313
Author(s):  
J. Liu ◽  
Min Chen ◽  
X.A. Mei ◽  
Y.H. Sun ◽  
Chong Qing Huang
Keyword(s):  
Solid State ◽  
Dielectric Permittivity ◽  
Room Temperature ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Dissipation Factor ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Layered Perovskite Structure

Bi3.25La0.75Ti2.97V0.03O12(BLTV) ceramic were prepared by solid state reaction. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. BLTV caused a large shift of the Curie temperature ( TC) of Bi4Ti3O12(BIT) from 675°C to 395°C. The remanent polarization and the coercive field of the BLTV were 31μC/cm2and 54kV/cm at an electric field of 90kV/cm, respectively. Furthermore, the dielectric permittivity and dissipation factor were 300 and 3×10-3at 1MHz, at 1V and at room temperature, respectively. These ferroelectric properties of BLTV are superior to V-doped Bi4Ti3O12(~20μC/cm2and 80kV/cm) and (Sr, Ta)-doped Bi4Ti3O12(~12μC/cm2and 71kV/cm) ceramics. In addition, the dense ceramics of BLTV could be obtained by sintering at temperatures 100─200°C lower than those of the SrBi2Ta2O9system.

Ferroelectric Properties of Bi3.25Gd0.75Ti2.97V0.03O12

2011 ◽  
Vol 492 ◽  
pp. 214-217
Author(s):  
Chong Qing Huang ◽  
M. Chen ◽  
X.A. Mei ◽  
Y.H. Sun ◽  
J. Liu
Keyword(s):  
Solid State ◽  
Dielectric Permittivity ◽  
Room Temperature ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Dissipation Factor ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Layered Perovskite Structure

Bi3.25Gd0.75Ti2.97V0.03O12(BGTV)ceramic were prepared by solid state reaction. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. BGTV caused a large shift of the Curie temperature ( TC) of Bi4Ti3O12(BIT) from 675°C to 398°C. The remanent polarization and the coercive field of the BGTV were 30μC/cm2and 52kV/cm at an electric field of 87kV/cm, respectively. Furthermore, the dielectric permittivity and dissipation factor were 300 and 0.003 at 1MHz, at 1V and at room temperature, respectively. These ferroelectric properties of BGTV are superior to V-doped Bi4Ti3O12(~20μC/cm2and 80kV/cm) and (Sr, Ta)-doped Bi4Ti3O12(~12μC/cm2and 71kV/cm) ceramics. In addition, the dense ceramics of BGTV could be obtained by sintering at temperatures 100─200°C lower than those of the SrBi2Ta2O9system.

Ferroelectric Properties and Microstructures of Tb2O3-Doped Bismuth Titanate Ceramics

2014 ◽  
Vol 633 ◽  
pp. 265-268 ◽  
Author(s):  
X.A. Mei ◽  
M. Chen ◽  
C.Q. Huang ◽  
R.F. Liu
Keyword(s):  
Electrical Properties ◽  
Coercive Field ◽  
Perovskite Structure ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Layered Perovskite ◽  
Potential Applications ◽  
Layered Perovskite Structure ◽  
Titanate Ceramics

The electrical properties of Tb2O3-doped bismuth titanate,Bi4-xTbxTi3O12 (BTT) ceramics prepared by a conventional electroceramic technique have been investigated. XRD analyses indicted Bi-layered perovskite structure in all samples, and revealed that Bi ions were only substituted near the Ti-O octahedron layers by Tb ions. SEM micrographs show randomly oriented and plate-like morphology. The remanent polarization ( Pr ) and coercive field ( Ec ) of the BTT ceramics with x=0.75 were above 16μC/cm2 and 75KV/cm, respectively. The large value of remanent polarization and low coercive field of Tb-doped bismuth titanate ceramics promote these materials to potential applications.

Ferroelectric Properties of Bi4-xPmxTi3O12 Ceramics

2013 ◽  
Vol 591 ◽  
pp. 224-227
Author(s):  
Fang Tian ◽  
X.A. Mei ◽  
M. Chen ◽  
C.Q. Huang
Keyword(s):  
Electrical Properties ◽  
Coercive Field ◽  
Perovskite Structure ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Layered Perovskite ◽  
Layered Perovskite Structure ◽  
Large Leakage Current

The electrical properties of Pm2O3-doped bismuth titanate,Bi4-xPmxTi3O12 (BPT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0 P-E hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.6 and 0.8 P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT ceramic with x=0.8 were above 18μC/cm2 and 75KV/cm , respectively.

Ferroelectric Properties and Microstructures of Dy2O3-Doped Bi4Ti3O12 Ceramics

2011 ◽  
Vol 492 ◽  
pp. 226-229
Author(s):  
J. Liu ◽  
M. Chen ◽  
X.A. Mei ◽  
Y.H. Sun ◽  
Chong Qing Huang
Keyword(s):  
Electrical Properties ◽  
Coercive Field ◽  
Perovskite Structure ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Layered Perovskite ◽  
Potential Applications ◽  
Layered Perovskite Structure ◽  
Titanate Ceramics

The electrical properties of Dy-doped bismuth titanate, Bi4-xDyxTi3O12(BDT) ceramics prepared by a conventional electroceramic technique have been investigated. XRD analyses revealed Bi-layered perovskite structure in all samples, and indicted that Bi ions were only substituted near the Ti-O octahedron layers by Dy ions. SEM micrographs show randomly oriented and plate-like morphology. The remanent polarization (Pr) and coercive field (Ec) of the BDT ceramic with x = 0.75 were above 19μC/cm2and 50KV/cm, respectively. The large value of remanent polarization and low coercive field of Dy-doped bismuth titanate ceramics promote these materials to potential applications.

Effect of Tb Substitution on Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics

2008 ◽  
Vol 368-372 ◽  
pp. 95-97
Author(s):  
Min Chen ◽  
W.K. An ◽  
A.H. Cai ◽  
Chong Qing Huang ◽  
K.L. Su ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Coercive Field ◽  
Perovskite Structure ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Sem Micrographs ◽  
Layered Perovskite Structure ◽  
Titanate Ceramics

The electrical properties and Microstructures of Tb-doped bismuth titanate (Bi3.3Tb0.6Ti3O12) ceramic were investigated. XRD analyses revealed that the sample had Bi-layered perovskite structure. SEM micrographs showed randomly oriented and plate-like morphology. The remanent polarization (Pr) and coercive field (Ec) of Bi3.3Tb0.6Ti3O12 ceramic are above 25 μC/cm2 and 80 KV/cm, respectively.

Ferroelectric Characteristics of Bi4-xPrxTi3O12 Ceramics

2014 ◽  
Vol 633 ◽  
pp. 382-385
Author(s):  
Rui Fang Liu ◽  
X.A. Mei ◽  
M. Chen ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Coercive Field ◽  
Perovskite Structure ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Layered Perovskite ◽  
Layered Perovskite Structure ◽  
Large Leakage Current

The electrical properties of Pr2O3-doped bismuth titanate,Bi4-xPrxTi3O12 (BPT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all ceramics. SEM micrographs showed randomly oriented and plate-like morphology. For the ceramics with x=0.25 and 1.0 P-E hysteresis loops were characterized by large leakage current, whereas for the ceramics with x=0.5 and 0.75 P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT ceramic with x=0.75 were above 18μC/cm2 and 65KV/cm , respectively.

Ferroelectric Characterization and Microstructures of Bi4-xLuxTi3O12 Ceramics

2013 ◽  
Vol 833 ◽  
pp. 21-24
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
C.Q. Huang ◽  
R.F. Liu
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Coercive Field ◽  
Perovskite Structure ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Hysteresis Loops ◽  
Layered Perovskite ◽  
Layered Perovskite Structure ◽  
Large Leakage Current

Ferroelectric electrical properties of Lu2O3-doped bismuth titanate,Bi4-xLuxTi3O12 (BLT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.25 and 0.75 P-E hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BLT ceramic with x=0.75 were above 18μC/cm2 and 85KV/cm , respectively.

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