Ferroelectric Properties of Bi3.25La0.75Ti2.97V0.03O12

2011 ◽  
Vol 412 ◽  
pp. 310-313
Author(s):  
J. Liu ◽  
Min Chen ◽  
X.A. Mei ◽  
Y.H. Sun ◽  
Chong Qing Huang
Keyword(s):  
Solid State ◽  
Dielectric Permittivity ◽  
Room Temperature ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Dissipation Factor ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Layered Perovskite Structure

Bi3.25La0.75Ti2.97V0.03O12(BLTV) ceramic were prepared by solid state reaction. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. BLTV caused a large shift of the Curie temperature ( TC) of Bi4Ti3O12(BIT) from 675°C to 395°C. The remanent polarization and the coercive field of the BLTV were 31μC/cm2and 54kV/cm at an electric field of 90kV/cm, respectively. Furthermore, the dielectric permittivity and dissipation factor were 300 and 3×10-3at 1MHz, at 1V and at room temperature, respectively. These ferroelectric properties of BLTV are superior to V-doped Bi4Ti3O12(~20μC/cm2and 80kV/cm) and (Sr, Ta)-doped Bi4Ti3O12(~12μC/cm2and 71kV/cm) ceramics. In addition, the dense ceramics of BLTV could be obtained by sintering at temperatures 100─200°C lower than those of the SrBi2Ta2O9system.

Ferroelectric Properties of Bi3.25Gd0.75Ti2.97V0.03O12

2011 ◽  
Vol 492 ◽  
pp. 214-217
Author(s):  
Chong Qing Huang ◽  
M. Chen ◽  
X.A. Mei ◽  
Y.H. Sun ◽  
J. Liu
Keyword(s):  
Solid State ◽  
Dielectric Permittivity ◽  
Room Temperature ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Dissipation Factor ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Layered Perovskite Structure

Bi3.25Gd0.75Ti2.97V0.03O12(BGTV)ceramic were prepared by solid state reaction. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. BGTV caused a large shift of the Curie temperature ( TC) of Bi4Ti3O12(BIT) from 675°C to 398°C. The remanent polarization and the coercive field of the BGTV were 30μC/cm2and 52kV/cm at an electric field of 87kV/cm, respectively. Furthermore, the dielectric permittivity and dissipation factor were 300 and 0.003 at 1MHz, at 1V and at room temperature, respectively. These ferroelectric properties of BGTV are superior to V-doped Bi4Ti3O12(~20μC/cm2and 80kV/cm) and (Sr, Ta)-doped Bi4Ti3O12(~12μC/cm2and 71kV/cm) ceramics. In addition, the dense ceramics of BGTV could be obtained by sintering at temperatures 100─200°C lower than those of the SrBi2Ta2O9system.

Ferroelectric Properties of Bi3.25Ho0.75Ti2.97V0.03O12

2014 ◽  
Vol 633 ◽  
pp. 362-365
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
C.Q. Huang
Keyword(s):  
Solid State ◽  
Dielectric Permittivity ◽  
Curie Temperature ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Dissipation Factor ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Layered Perovskite Structure

Bi3.25Ho0.75Ti2.97V0.03O12(BHTV) ceramics was prepared by solid state reaction. This sample had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. BHTV caused a large shift of the Curie temperature ( TC) of Bi4Ti3O12(BIT) from 675 °C to 398 °C. The remanent polarization and the coercive field of the BHTV ceramics were 28μC/cm2and 56kV/cm at an electric field of 90kV/cm, respectively. Furthermore, the dielectric permittivity and dissipation factor were 298 and 2.8×10-3at 1MHz, respectively. These ferroelectric properties of BHTV ceramics are superior to V-doped Bi4Ti3O12(~20μC/cm2and 80kV/cm) and (Sr, Ta)-doped Bi4Ti3O12(~12μC/cm2and 71kV/cm) ceramics. In addition, the dense ceramics of BHTV could be obtained by sintering at temperatures 100─200 °C lower than those of the SrBi2Ta2O9system.

Dielectric and Ferroelectric Properties of Bi2.9Pr0.9Ti2.97V0.03O12

2012 ◽  
Vol 624 ◽  
pp. 166-169 ◽  
Author(s):  
J.G. Liu ◽  
X.A. Mei ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Solid State ◽  
Room Temperature ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Dissipation Factor ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Layered Perovskite Structure ◽  
Curie Temperature Tc

Bi2.9Pr0.9Ti2.97V0.03O12 (BPTV) ceramics were prepared by solid state reaction. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. BPTV caused a large shift of the Curie temperature ( TC ) of Bi4Ti3O12 (BIT) from 675°C to 385°C. The remanent polarization and the coercive field of the BLTV were 31μC/cm2 and 60kV/cm at an electric field of 100kV/cm, respectively. Furthermore, the dielectric permittivity and dissipation factor were 300 and 3.3×10-3 at 1MHz, at 1V and at room temperature, respectively. These ferroelectric properties of BPTV are superior to V-doped Bi4Ti3O12 (~20μC/cm2 and 80kV/cm) and (Sr, Ta)-doped Bi4Ti3O12 (~12μC/cm2 and 71kV/cm) ceramics. In addition, the dense ceramics of BPTV could be obtained by sintering at temperatures 100─200°C lower than those of the SrBi2Ta2O9 system.

Fatigue and Ferroelectric Properties of Bi3.25Gd0.75Ti2.97V0.03O12

2012 ◽  
Vol 624 ◽  
pp. 170-173
Author(s):  
J.G. Liu ◽  
X.A. Mei ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Solid State ◽  
Electric Field ◽  
Solid State Reaction ◽  
Coercive Field ◽  
Perovskite Structure ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Layered Perovskite Structure

Bi3.25Gd0.75Ti2.97V0.03O12 (BGTV) ceramics were prepared by solid state reaction. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. The remanent polarization and the coercive field of the BGTV were 24μC/cm2 and 65kV/cm at an electric field of 100kV/cm, respectively. These ferroelectric properties of BGTV are superior to V-doped Bi4Ti3O12 (~20μC/cm2 and 80kV/cm) and (Sr, Ta)-doped Bi4Ti3O12 (~12μC/cm2 and 71kV/cm) ceramics. In addition, the dense ceramics of BGTV could be obtained by sintering at temperatures 100─200°C lower than those of the SrBi2Ta2O9 system.

Ferroelectric Properties and Microstructures of Bi4-x LuxTi3O12 Thin Films

2013 ◽  
Vol 833 ◽  
pp. 33-36 ◽  
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature ◽  
Lu Doping

Lu2O3-doped bismuth titanate (Bi4-xLuxTi3O12: BLT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Lu-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675 °C to lower temperature and a improvement in dielectric property. The experimental results indicated that Lu doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BLT film with x=0.75 were 28 μC/cm2 and 65 kV/cm, respectively.

Dielectric and Ferroelectric Properties of Er2O3-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 118-121
Author(s):  
X.B. Liu ◽  
X.A. Mei ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Er Doping ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature

Er2O3-doped bismuth titanate (Bi4-xErxTi3O12, BET) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Er-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that Er doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BET film with x=0.75 were 21 μC/cm2 and 80 kV/cm, respectively.

Electrical Characterization and Microstructures of Y2O3-Doped Bi4Ti3O12 Thin Films

2013 ◽  
Vol 591 ◽  
pp. 208-211
Author(s):  
Min Chen ◽  
J. Liu ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature ◽  
Curie Temperature Tc

Y2O3-doped bismuth titanate (Bi4-xYxTi3O12: BYT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Y-doping into BIT caused a large shift of the Curie temperature ( TC ) from 675 °C to lower temperature and a improvement in dielectric property. The experimental results indicated that Y doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BYT film with x=0.75 were 28 μC/cm2 and 65 kV/cm, respectively.

Large Remanent Polarization of Pm2O3-Doped Bi4Ti3O12 Films

2013 ◽  
Vol 591 ◽  
pp. 104-107
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
C.Q. Huang
Keyword(s):  
Remanent Polarization ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Si Substrates ◽  
Current Voltage ◽  
Layered Perovskite Structure ◽  
Current Voltage Characteristics

Pm-doped bismuth titanate (Pm4-xLaxTi3O12: BPT) and pure Bi4Ti3O12(BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25, 1.0, and 1.25, the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75, the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Fims with x=0.75 were above 40μC/cm2 and 60KV/cm , respectively.

Electrical Characterization and Microstructures of Ce-Doped Bi4Ti3O12 Thin Films

2011 ◽  
Vol 492 ◽  
pp. 222-225
Author(s):  
J. Liu ◽  
M. Chen ◽  
X.A. Mei ◽  
Y.H. Sun ◽  
Chong Qing Huang
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature

Tb-doped bismuth titanate (Bi4-xCexTi3O12: BCT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Ce-doping into BIT caused a large shift of the Curie temperature (TC) from 675°C to lower temperature and a improvement in dielectric property. The experimental results indicated that Ce doping into BIT also result in a remarkable improvement in ferroelectric property. The Pr and the Ec values of the BCT film with x = 0.75 were 23 μC/cm2 and 80 kV/cm, respectively.

Electrical Characterization and Microstructures of Tb-Doped Bi4Ti3O12 Thin Films

2008 ◽  
Vol 368-372 ◽  
pp. 82-84
Author(s):  
Y.H. Sun ◽  
Min Chen ◽  
W.K. An ◽  
A.H. Cai ◽  
J. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Layered Perovskite ◽  
Random Orientation ◽  
Large Shift ◽  
Si Substrates ◽  
Layered Perovskite Structure ◽  
Lower Temperature ◽  
Curie Temperature Tc

Tb-doped bismuth titanate (BixTbyTi3O12: BTT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well-developed rod-like grains with random orientation. Tb doping into BIT caused a large shift of the Curie temperature (TC) from 675°C to lower temperature. The experimental results indicated that Tb doping into BIT result in a remarkable improvement in dielectric property.

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