Impact of the Oxygen Content on the Electronic Properties in Epitaxial Thin Films of Electron-Doped La0.9Hf0.1MnO3

2013 ◽  
Vol 634-638 ◽  
pp. 2485-2488
Author(s):  
Lin Wang ◽  
Zhen Ping Wu ◽  
Yu Cheng Jiang ◽  
Bing Ren ◽  
Jian Huang ◽  
...  

Thin films of perovskite manganite La0.9Hf0.1MnO3 (LHMO) have been grown on (100) SrTiO3 single-crystal substrates with different growth pressures by pulsed laser deposition. The different transport behaviors of films have been fitted by various models. The results clearly demonstrate that oxygen pressure is an efficient way to change the transport behaviors of LHMO films. All the transport behaviors observed in LHMO films can be better fitted by Mott’s variable range hopping model than the other two models.

2005 ◽  
Vol 495-497 ◽  
pp. 1425-1430 ◽  
Author(s):  
K. Subba Rao ◽  
R. Tamm ◽  
S.C. Wimbush ◽  
G.H. Cao ◽  
C.G. Oertel ◽  
...  

Epitaxial thin films of the superconducting borocarbide compound YNi2B2C were grown on single crystal MgO (100) substrates without and with Y2O3 buffer layer using pulsed laser deposition (PLD). In both cases YNi2B2C grows with [001] normal to the substrate. However, the in-plane texture depends on the starting condition. For samples without buffer layer, oxygen from the substrate diffuses into the film and forms an Y2O3 reaction layer at the interface. As a consequence, a deficiency of Y is generated giving rise to the formation of secondary phases. On the other hand, using an artificial Y2O3 buffer layer secondary phases are suppressed. The texture of the Y2O3 layers determines the texture of the YNi2B2C film. The superconducting properties of the borocarbide films are discussed with respect to texture and phase purity.


2012 ◽  
Vol 1434 ◽  
Author(s):  
P. Mele ◽  
K. Matsumoto ◽  
H. Nagayoshi ◽  
K. Fujita ◽  
Y. Yoshida ◽  
...  

ABSTRACTEpitaxial Fe-Te-Se thin films were deposited by pulsed laser deposition at 250 ~ 600 °C on SrTiO3 (100, STO), MgO (100), LaAlO3 (100, LAO) and CaF2 (100) single crystal substrates. Best superconducting film was grown on CaF2: Tconset = 20.0 K and Tc0 = 16.18 K with Tdep = 300 °C, 45000 pulses, 3 Hz. The critical current density Jc at 4.2 K was 0.41×106A/cm2 at 0 T and 0.23×106 A/cm2 at 9 T. Angular dependence of Jc showed broad c-axis correlated peak when B ≥ 3 T.


2005 ◽  
Vol 133 (10) ◽  
pp. 641-645 ◽  
Author(s):  
Yimin Cui ◽  
Chunchang Wang ◽  
Bisong Cao

2004 ◽  
Vol 201 (10) ◽  
pp. 2385-2389 ◽  
Author(s):  
Yanwei Ma ◽  
M. Guilloux-Viry ◽  
O. Pena ◽  
C. Moure

2005 ◽  
Vol 12 (04) ◽  
pp. 539-543 ◽  
Author(s):  
QUANHE BAO ◽  
CHUANZHONG CHEN ◽  
LUBIN CHEN ◽  
DIANGANG WANG ◽  
TINGQUAN LEI ◽  
...  

A modified surface layer of hydroxyapatite (HA) target was observed before and after pulsed laser deposition. Two types of HA targets were used for laser ablation. We observed that the surface morphology of the target has a very fine compacted grain structure and presents many irregularities with some microroughness and microporosity before laser ablation. The laser ablated regions can be divided into two areas: one area is porous and rough but the other is dense and smooth. The percentage of particles in the films was high for the films produced with targets that were sintered at 1200°C.


2003 ◽  
Vol 796 ◽  
Author(s):  
Fumiaki Mitsugi ◽  
Seiji Kanazawa ◽  
Toshikazu Ohkubo ◽  
Yukiharu Nomoto ◽  
Yusaku Takita ◽  
...  

ABSTRACTAn La1-xSrxGa1-y-zMgyCozO3-(x+y+z)/2 (LSGMCO) has attracted much attention because it can be useable as an electrolyte of a solid oxide fuel cell due to its high oxide ion conductivity. We prepared LSGMCO thin films on silica glass and LaAlO3 single crystal substrates by pulsed laser deposition and evaluated their properties. LSGMCO thin films deposited at 800°C were poly-crystal and the deposition pressure affected their surface morphologies. In the case of the LaAlO3 single crystal substrate, a c-axis oriented LSGMCO thin film was obtained. DC conductivity and complex impedance of LSGMCO thin films were measured in vacuum atmosphere to investigate the effect of the crystal orientation on the oxide ion conductivity. It was revealed that resistance at a grain boundary of films is more dominant compare with the grain interior.


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