THE TARGET MORPHOLOGY DURING PULSED LASER DEPOSITION OF HYDROXYAPATITE THIN FILMS

2005 ◽  
Vol 12 (04) ◽  
pp. 539-543 ◽  
Author(s):  
QUANHE BAO ◽  
CHUANZHONG CHEN ◽  
LUBIN CHEN ◽  
DIANGANG WANG ◽  
TINGQUAN LEI ◽  
...  

A modified surface layer of hydroxyapatite (HA) target was observed before and after pulsed laser deposition. Two types of HA targets were used for laser ablation. We observed that the surface morphology of the target has a very fine compacted grain structure and presents many irregularities with some microroughness and microporosity before laser ablation. The laser ablated regions can be divided into two areas: one area is porous and rough but the other is dense and smooth. The percentage of particles in the films was high for the films produced with targets that were sintered at 1200°C.

2001 ◽  
Vol 704 ◽  
Author(s):  
Decio Coutinho ◽  
Kenneth J. Balkus

AbstractPatterned mesoporous DAM-1 thin films were prepared on flexible transparent film utilizing the pulsed laser deposition and a line patterning technique. The patterned lines are transferred to the transparent film using a laser printer or copy machine. Laser ablation of DAM-1 onto the patterned substrate followed by a hydrothermal treatment resulted in a densely packed mesoporous film. Upon removal of the patterned lines (i.e. the underlying toner) by ultrasonic treatment in toluene, patterned DAM-1 films were produced.


2006 ◽  
Vol 320 ◽  
pp. 45-48
Author(s):  
Hyun Young Go ◽  
Naoki Wakiya ◽  
Keisuke Satoh ◽  
Masao Kondo ◽  
Jeffrey S. Cross ◽  
...  

In this study, BiFeO3 (BFO) epitaxial film was deposited on SrRuO3 (100)/SrTiO3 (100) substrates using pulsed laser deposition (PLD). Phase pure BFO thin film was obtained. Introducing a mask between the target and substrate in PLD improved the surface roughness from 47.8 nm (RMS, without mask) to 7.7 nm (RMS, with mask). The composition and electrical properties of BFO thin film were assessed after annealing for 1 h in Ar, N2, or O2 atmosphere at 600°C. The P-E hysteresis properties improved only in the O2 atmosphere. After annealing under O2 atmosphere, the leakage current decreased from 6.1 × 10-2 A/cm to 2.9 × 10-2 A/cm at 200 kV/cm, as in the other annealing atmospheres, but 2Pr increased from 35 BC/cm2 to 50 BC/cm2.


1996 ◽  
Vol 31 (11) ◽  
pp. 2839-2847 ◽  
Author(s):  
I. N. Mihailescu ◽  
Adriana Lita ◽  
V. S. Teodorescu ◽  
A. Luches ◽  
M. Martino ◽  
...  

2002 ◽  
Vol 752 ◽  
Author(s):  
Zhongsheng Deng ◽  
Thomas J. Pisklak ◽  
Kenneth J. Balkus

ABSTRACTThin films of zeolites including silicalite-1, mordenite and UTD-18 have been prepared on stainless steel foil via pulsed laser deposition (PLD). Laser ablation of as-synthesized zeolite targets onto stainless steel foil followed by a post hydrothermal treatment results in partially oriented zeolite thin films. SEM, XRD were used to characterize the zeolite thin films. Preliminary results for multilayercoatings of different zeolites will also be presented.


2019 ◽  
Vol 14 (29) ◽  
pp. 90-100
Author(s):  
Eman M. Nasir

Polycrystalline Cadmium Oxide (CdO) thin films were preparedusing pulsed laser deposition onto glass substrates at roomtemperature with different thicknesses of (300, 350 and 400)nm,these films were irradiated with cesium-137(Cs-137) radiation. Thethickness and irradiation effects on structural and optical propertieswere studied. It is observed by XRD results that films arepolycrystalline before and after irradiation, with cubic structure andshow preferential growth along (111) and (200) directions. Thecrystallite sizes increases with increasing of thickness, and decreaseswith gamma radiation, which are found to be within the range(23.84-4.52) nm and (41.44-4.974)nm before and after irradiation forthickness 350nm and 400nm respectively, The dislocation density,microstrain and number of crystallites per unit surface area,decreases with increasing of thickness, while they increases withgamma radiation. From the atomic force microscope (AFM), thegrain size of CdO films decrease from 96.69nm before radiation to89.49 nm after gamma radiation and RMS roughness increases forthe irradiated sample from 4.26nm to 4.8nm, increase in the surfaceroughness is advantages as it increases the efficiency of the CdOsolar cells. The optical properties for thin CdOfilms with differentthickness before and after gamma irradiation have been determinedand reveals direct energy gap. It is decrease with the increase ofthickness, while it is increase after gamma irradiation. These films apromising candidate for the window layer in solar cells and otherpossible optoelectronic application.


2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.


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