Electrical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film Prepared Using Sol-Gel Spin-Coating Method at Different Doping Concentrations

2013 ◽  
Vol 667 ◽  
pp. 507-510 ◽  
Author(s):  
N.D. Md Sin ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Spin Coating ◽  
Doping Concentration ◽  
Sol Gel ◽  
Zno Thin Film ◽  
Al Doping ◽  
Coating Method ◽  
Doped Zno

Aluminum (Al) doped Zinc Oxide (ZnO) thin films were prepared using sol-gel spin-coating method at different doping concentrations. The effects of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. The thin films were characterized using Current-Voltage (I-V) measurement and field emission scanning electron microscope (FESEM) for electrical properties and surface morphology, respectively. The I-V measurement result indicated electrical properties of Al doped ZnO thin film improved with Al doping. The FESEM investigations show that the nanoparticles size becomes smaller and denser as the doping concentration increase.

Effect of Bi dopant on morphological and optical properties of ZnO semiconductor films produced by the sol-gel spin coating process

2021 ◽  
Vol 63 (8) ◽  
pp. 778-782
Author(s):  
Tülay Yıldız ◽  
Nida Katı ◽  
Kadriye Yalçın
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Optical Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Zno Thin Film ◽  
Spin Coating Method ◽  
Coating Method ◽  
Doped Zno

Abstract In this study, undoped semiconductor ZnO thin film and Bi-doped ZnO thin films were produced using the sol-gel spin coating method. By changing each parameter of the spin coating method, the best conditions for the formation of the film were determined via the trial and error method. When the appropriate parameter was found, the specified parameter was applied for each film. The structural, superficial, and optical properties of the films produced were characterized via atomic force microscope (AFM), UV-visible spectroscopy, and Fourier transform infrared (FTIR), and the effects of Bi dopant on these properties were investigated. When the morphological properties of the undoped and Bi-doped ZnO films were examined, it was observed that they had a structure in a micro-fiber shape consisting of nanoparticles. When the surface roughness was examined, it was observed that the surface roughness values became larger as the rate of Bi dopant increased. By examining the optical properties of the films, it was determined that they were direct band transition materials and Bi-doped thin films were involved in the semiconductor range. In addition, optical properties changed positively with Bi dopant. Since Bi-doped ZnO thin film has a wide bandgap and good optical properties, it is a material that can be used in optoelectronic applications.

Al Doped ZnO Thin Film Based Ultraviolet Photo-Conductive Sensor Prepared by Sol-Gel Spin-Coating Method

2009 ◽  
Author(s):  
M. H. Mamat ◽  
M. Z. Sahdan ◽  
S. Amizam ◽  
H. A. Rafaie ◽  
Z. Khusaimi ◽  
...  
Keyword(s):  
Thin Film ◽  
Spin Coating ◽  
Sol Gel ◽  
Zno Thin Film ◽  
Spin Coating Method ◽  
Coating Method ◽  
Doped Zno

A Novel Ethanol-Based Non-Particulate Ink for Spin-Coating Cu2ZnSnS4 Thin Film

2021 ◽  
Vol 16 (2) ◽  
pp. 136-141
Author(s):  
Jingyuan Zhang ◽  
Yusheng Liu ◽  
Jianing Song ◽  
Mu Zhang ◽  
Xiaodong Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Spin Coating ◽  
Treatment Temperature ◽  
Coated Film ◽  
Coating Method ◽  
Pre Treatment ◽  
Cu2znsns4 Thin Film ◽  
Czts Thin Films

The Cu2ZnSnS4 (CZTS) thin films were fabricated by the direct solution coating method using a novel non-particulate ink. The ink was formulated using ethanol as the solvent and 1,2-diaminopropane as the complex-ing agent. The pure phase kesterite films with good crystallinity, large-sized crystals and excellent electrical properties were prepared by the spin-coating deposition technique using the homogeneous and air-stable ink. It was found that the subsequent pre-treatment temperature had an influence on the film crystallinity and electrical properties. The best film was obtained by pre-treating the spin-coated film at 250 °C, and then post-annealing at 560 °C. The film shows a narrow bandgap of 1.52 eV and excellent electrical properties, with a resistivity of 0.07 Ocm, carrier concentration of 3.0 x 1017 cm-3, and mobility of 4.15 cm2 V-1 s-1. The novel non-particulate ink is promising for printing high quality CZTS thin films as absorber layers of thin film solar cells.

Multifractal analysis of Mg‐doped ZnO thin films deposited by sol–gel spin coating method

2021 ◽  
Author(s):  
Ştefan Ţălu ◽  
Samah Boudour ◽  
Idris Bouchama ◽  
Bandar Astinchap ◽  
Hamta Ghanbaripour ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Multifractal Analysis ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Spin Coating Method ◽  
Coating Method ◽  
Doped Zno ◽  
Mg Doped
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