Excess Heat Triggering by 488 nm Laser in a D/Pd Gas-Loading System

2013 ◽  
Vol 834-836 ◽  
pp. 1182-1185 ◽  
Author(s):  
Xing Ye Wang ◽  
Bing Jun Shen ◽  
Li Hong Jin ◽  
Xin Le Zhao ◽  
Jian Tian
Keyword(s):  
Heat Production ◽  
Excess Heat ◽  
Lattice Matching ◽  
Argon Ion Laser ◽  
Loading System ◽  
Key Factor ◽  
Loading Ratio ◽  
Ion Laser ◽  
Argon Ion

A beam of Argon ion laser (λ = 488 nm and P = 40 mW) was used to irradiate some palladium deuterides with different deuteron loading ratios in a D/Pd gas-loading system (19 different loading ratios ranging from 0 to 0.77). The results showed that there was a maximum excess heat of about 287 J within an hour in the system when the loading ratio was about 0.65. This corresponds to 2.6×103 eV/atom D or 1.7 ×103eV/atom Pd. The results indicate that the proper ratio in the Pd lattice matching a suitable triggering power may be the key factor to excess heat production.

Laser Induced Etching for Generation of Si Nanocrystals and Spectroscopic Investigation of Morphology

2005 ◽  
Vol 23 ◽  
pp. 43-46
Author(s):  
H.S. Mavi ◽  
S. Rath ◽  
Arun Shukla
Keyword(s):  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Laser Wavelength ◽  
Interconnected Network ◽  
Substrate Type ◽  
Argon Ion Laser ◽  
Si Nanocrystals ◽  
Ion Laser ◽  
Laser Induced Etching ◽  
Argon Ion

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.

Electron temperatures in a segmented-metal argon-ion laser

1972 ◽  
Vol 5 (10) ◽  
pp. 1807-1814 ◽  
Author(s):  
A Maitland ◽  
J C L Cornish
Keyword(s):  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

scholarly journals Spectroscopic Properties of Photoproduct of Hematoporphyrin Derivative Oligomer by Photoradiation of Argon-ion Laser

1988 ◽  
Vol 8 (4) ◽  
pp. 3-9
Author(s):  
Norio MIYOSHI ◽  
Takahiro SEKI ◽  
Shuichi KINOSHITA ◽  
Takashi KUSHIDA ◽  
Tsuyoshi NISHIZAKA ◽  
...  
Keyword(s):  
Spectroscopic Properties ◽  
Hematoporphyrin Derivative ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

scholarly journals Endoscopic phototherapy using argon ion laser for gastrointestinal tumors

1982 ◽  
Vol 3 (1) ◽  
pp. 35-38
Author(s):  
Masatoshi Esaki ◽  
Hideo Hiratsuka ◽  
Mamoru Hiyama ◽  
Osamu Ueda ◽  
Yukio Toda ◽  
...  
Keyword(s):  
Gastrointestinal Tumors ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

CW ruby laser pumped by an argon ion laser

1977 ◽  
Vol 13 (10) ◽  
pp. 808-809 ◽  
Author(s):  
M. Birnbaum ◽  
A. Tucker ◽  
C. Fincher
Keyword(s):  
Ruby Laser ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Determination of Organics on Metal Surfaces by Raman Spectroscopy

1993 ◽  
Vol 47 (11) ◽  
pp. 1767-1771 ◽  
Author(s):  
Ching-Hui Tseng ◽  
Charles K. Mann ◽  
Thomas J. Vickers
Keyword(s):  
Fiber Optic ◽  
Laser Excitation ◽  
Internal Standard ◽  
Aluminum Surface ◽  
Hadamard Transform ◽  
Dimethyl Methylphosphonate ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Detection limits of about 1 g/m2 are demonstrated for the Raman determination of two organic materials, polydimethylsiloxane and dimethyl methylphosphonate, on an aluminum surface. A fiber-optic-based system is used. A large sample area is scanned to overcome heterogeneity in sample coverage. Measurements are made without use of an internal standard. Results are reported for both a Hadamard transform technique with argon-ion laser excitation and a conventional spectrometer with diode laser excitation.

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