Crystallographic and Electrical Properties of Barium Zirconium Titanate Doped by Indium and Lanthanum

2014 ◽  
Vol 896 ◽  
pp. 347-350
Author(s):  
Septian Rahmat Adnan ◽  
Muhammad Hikam ◽  
Edward Rizky
Keyword(s):  
Electrical Properties ◽  
Spontaneous Polarization ◽  
Spin Coating ◽  
Chemical Solution Deposition ◽  
Lattice Parameters ◽  
Zirconium Titanate ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Coating Method ◽  
Barium Zirconium Titanate

Barium Zirconium Titanate (BZT) films doped by Indium and Lanthanum were prepared using Chemical Solution Deposition followed by spin coating method. After deposition, the spesimen was annealed at 800 °C for 3 hours, using 3000 rpm angular spin coating speed. From crystallographic examination we found that the system is perovskite tetragonal with lattice parameters of a = 3.967 Ǻ, c = 3.988 Ǻ. On adding Indium and Lanthanum dopants, their lattice parameters have slightly increased. The spontaneous polarization of BZT is 23.13 µC/cm2, and their spontaneous polarizations increase on adding La dopant. The best spontaneous polarization is at 1 mol % dopant of Lanthanum.

Oxygen Permeable Properties of Ce0.8Gd0.2O1.9 - MFe2O4 Composite Thin Films Prepared by a Chemical Solution Deposition Method

2004 ◽  
Vol 835 ◽  
Author(s):  
Isao Kagomiya ◽  
Takashi Iijima ◽  
Hitoshi Takamura
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Chemical Solution Deposition ◽  
Mixed Conductor ◽  
Deposition Method ◽  
Chemical Solution ◽  
Measuring Time ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Coating Method

ABSTRACTCe0.8Gd0.2O1.9 (CGO) - MFe2O4 (M=divalent cation) is a composite-type oxygen-ionic and electronic mixed conductor. Dense nanocrysalline CGO-CoFe2O4 thin films with a thickness of approximately 1 μm were prepared on CGO porous substrates by a chemical solution spin-coating method. The oxygen permeable flux of the thin film was investigated in temperature range of 700°C - 800°C without physical leak of N2 gas. The permeable flux depends on the measuring time, when the measuring temperature was kept at 750°C before increasing to 800°C. This fact suggests that the O2 permeable properties were affected by a slight change of the film morphology and the crystallinity.

Enhanced electrical conductivity of Au–LaNiO3 nanocomposite thin films by chemical solution deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (94) ◽  
pp. 76783-76787 ◽  
Author(s):  
H. L. Wang ◽  
X. K. Ning ◽  
Z. J. Wang
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Chemical Solution Deposition ◽  
Nanocomposite Films ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Nanocomposite Thin Films ◽  
One Step

Au–LaNiO3 (Au–LNO) nanocomposite films with 3.84 at% Au were firstly fabricated by one-step chemical solution deposition (CSD), and their electrical properties were investigated.

Phase Formations and Electrical Properties of Various (Bi, La)4Ti3O12 Thin Films by Chemical Solution Deposition

2004 ◽  
Vol 13 (1-3) ◽  
pp. 71-75
Author(s):  
Won-Jae Lee ◽  
Guoxia Liu ◽  
Byoung-Chul Shin ◽  
Geun-Hyoung Lee ◽  
Il-Soo Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition

scholarly journals Application of Ba0.5Sr0.5TiO3 (Bst) Film Doped with 0%, 2%, 4% and 6% Concentrations of RuO2 as an Arduino Nano-Based Bad Breath Sensor

Chemosensors ◽  
2019 ◽  
Vol 8 (1) ◽  
pp. 3
Author(s):  
Irzaman ◽  
Ridwan Siskandar ◽  
Brian Yuliarto ◽  
Mochammad Zakki Fahmi ◽  
Ferdiansjah
Keyword(s):  
Silicon Substrate ◽  
Spin Coating ◽  
Chemical Solution Deposition ◽  
Voltage Response ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Op Amp ◽  
Electronic Circuitry ◽  
Voltage Output ◽  
Bad Breath

Ba0.5Sr0.5TiO3 (BST) film doped with variations in RuO2 concentration (0%, 2%, 4%, and 6%) has been successfully grown on a type-p silicon substrate (100) using the chemical solution deposition (CSD) method and spin-coating at a speed of 3000 rpm for 30 s. The film on the substrate was then heated at 850 °C for 15 h. The sensitivity of BST film + RuO2 variations as a gas sensor were characterized. The sensitivity characterization was assisted by various electronic circuitry with the purpose of producing a sensor that is very sensitive to gas. The responses from the BST film + RuO2 variation were varied, depending on the concentration of the RuO2 dope. BST film doped with 6% RuO2 had a very good response to halitosis gases; therefore, this film was applied as the Arduino-Nano-based bad-breath detecting sensor. Before it was integrated with the microcontroller, the voltage output of the BST film was amplified using an op-amp circuit to make the voltage output from the BST film readable to the microcontroller. The changes in the voltage response were then shown on the prototype display. If the voltage output was ≤12.9 mV, the display would read “bad breath”. If the voltage output >42.1 mV, the display would read “fragrant”. If 12.9 mV < voltage output ≤ 42.1 mV, the display would read “normal”.

Growth and electrical properties of Ce-doped Bi2Ti2O7 thin films by chemical solution deposition

2008 ◽  
Vol 255 (5) ◽  
pp. 2651-2654 ◽  
Author(s):  
Xiangyang Jing ◽  
Baibiao Huang ◽  
Xuena Yang ◽  
Jiyong Wei ◽  
Zeyan Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition

Microstructure and electrical properties of chemical solution deposition (Pb,La)(Zr,Ti)O3 thin films on Pt electrodes

1999 ◽  
Vol 14 (11) ◽  
pp. 4366-4371 ◽  
Author(s):  
Jeffrey S. Cross ◽  
Mitsushi Fujiki ◽  
Mineharu Tsukada ◽  
Yasutoshi Kotaka ◽  
Yasuyuki Goto
Keyword(s):  
Electrical Properties ◽  
Chemical Solution Deposition ◽  
Secondary Phase ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Atomic Force ◽  
Pt Electrodes ◽  
Boundary Triple ◽  
Triple Points

(Pb,La)(Zr,Ti)O3 (PLZT) films with thicknesses of 150 and 225 nm were prepared by the chemical solution deposition method on sputtered Pt/IrO2 coated on SiO2/Si wafers. The annealed films revealed two different microstructures: fined-grained and large-grained. The thinner film had the largest grain size and highest leakage current, whereas the thicker film had small grains and lower leakage. Atomic force microscope images showed that the thinner film had half-domed-shaped grains, which were about one-third thinner at the grain boundary triple points. These triple points also contained a nanocrystalline nonstoichiometric secondary phase, which contributed to high leakage. A model was developed showing differences in crystallization on the basis of grain growth and number of nuclei on the Pt surface. These results indicate the importance of controlling the film microstructure and its relationship to the film electrical properties.

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