Effect of Cobalt-Substitution on the Structure and Thermoelectric Properties of Chimney-Ladder Solid Solution (Mn1-xCox)Siγ (γ~ 1.7)

2010 ◽  
Vol 74 ◽  
pp. 22-25 ◽  
Author(s):  
Yuzuru Miyazaki ◽  
Yoshitsugu Saito ◽  
Kei Hayashi ◽  
Kunio Yubuta ◽  
Tsuyoshi Kajitani

A partially cobalt-substituted solid solution of Nowotny chimney-ladder phase, (Mn1-xCox)Si􀀂, has been prepared using a tetra-arc-type furnace and a subsequent annealing process. The compounds consist of two tetragonal subsystems of [Mn1-xCox] and [Si], with an irrational c-axis ratio 􀀂 = cMn/cSi ~ 1.7. The crystal structure and thermoelectric properties of (Mn1-xCox)Si􀀂 solid solution were compared with those of the Fe-substituted solid solution, (Mn1-xFex)Si􀀂. In the case of Co-series, extra valence electrons are introduced relative to Fe-series, since the valence electron count is 3d74s2 for Co but 3d64s2 for Fe, respectively. It was naturally expected that the Feand Co-substituted MnSi􀀁 becomes n-type conductor from the p-type one at x > 0.23(5) and x > 0.06(1), respectively. Experimentally, the Fe-substituted samples become n-type at x > 0.28 but it is not the case for the Co-substituted ones. It is thus evident that there is an unknown factor which controls the thermoelectric properties of Co-substituted samples.

2003 ◽  
Vol 793 ◽  
Author(s):  
Theodora Kyratsi ◽  
Duck Young Chung ◽  
Jeff S. Dyck ◽  
Ctirad Uher ◽  
Sangeeta Lal ◽  
...  

ABSTRACTSolid solution series of the type K2Bi8-xSbxSe13, K2-xRbxBi8Se13 as well as K2Bi8Se13-xSx were prepared and the distribution of the atoms (Bi/Sb, K/Rb and Se/S) on different crystallographic sites, the band gaps and their thermoelectric properties were studied. The distribution Se/S appears to be more uniform than the distribution of the Sb and Rb atoms in the β-K2Bi8Se13 structure that shows preference in specific sites in the lattice. Band gap is mainly affected by Sb and S substitution. Seebeck coefficient measurements showed n-type character for of all Se/S members. In the Bi/Sb series an enhancement of p-type character was observed. The thermoelectric performance as well as preliminary high temperature measurements suggest the potential of these materials for high temperature applications.


2017 ◽  
Vol 4 (9) ◽  
pp. 1458-1464 ◽  
Author(s):  
M.-Y. Lee ◽  
D. I. Bilc ◽  
E. Symeou ◽  
Y.-C. Lin ◽  
I.-C. Liang ◽  
...  

A new p-type semiconductor Ba3Ag3InTe6 with transport properties dominated by the layer [Ag3Te4]5− distributed in the valence band.


2018 ◽  
Vol 745 ◽  
pp. 172-178 ◽  
Author(s):  
Asfandiyar ◽  
Zhiliang Li ◽  
Fu-Hua Sun ◽  
Huaichao Tang ◽  
Jin-Feng Dong ◽  
...  

2007 ◽  
Vol 561-565 ◽  
pp. 463-466 ◽  
Author(s):  
Kyosuke Kishida ◽  
Akira Ishida ◽  
Katsushi Tanaka ◽  
Haruyuki Inui

The variations of the crystal structures and thermoelectric properties of the Ru1-xRexSiy chimney-ladder phases were studied as a function of the Re concentration. A series of chimney-ladder phases with a compositional formula of Ru1-xRexSi1.539+0.178x are formed in a wide compositional range, 0.14 ≤ x ≤ 0.76. The composition of the chimney-ladder phase is systematically deviated from the idealized composition satisfying the valence electron concentration rule: VEC=14. Measurements of thermoelectric properties reveal that the chimney-ladder phases exhibit n-type semiconducting behavior at low Re concentrations and p-type semiconducting behavior at high Re concentrations, which are well consistent with the prediction based on the deviation of the composition of the chimney-ladder phase from the idealized composition.


2015 ◽  
Vol 3 (40) ◽  
pp. 10509-10517 ◽  
Author(s):  
Stefan Maier ◽  
Robin Lefèvre ◽  
Xinsong Lin ◽  
Raghavendra Nunna ◽  
David Berthebaud ◽  
...  

The crystal structure of single crystalline members of the solid solution series Tl(V1−xCrx)5Se8 (x = 0–1 and Δx = 0.2) was determined and the magnetic and thermoelectric properties of bulk TlV5Se8 were investigated.


2002 ◽  
Vol 753 ◽  
Author(s):  
J-J Gu ◽  
K. Kuwabara ◽  
K. Tanaka ◽  
H. Inui ◽  
M. Yamaguchi ◽  
...  

ABSTRACTThe crystal structure of the defect disilicide formed with Re (ReSi1.75) has been refined by transmission electron microscopy combined with first-principles calculation. The crystal structure is monoclinic with the space group Cm (mc44) due to an ordered arrangement of vacancies on Si sites in the underlying (parent) C11b lattice. The thermoelectric properties of ReSi1.75 are highly anisotropic. Its electrical conduction is of n-type when measure along [001] while it is of p-type when measured along [100]. Although the value of Seebeck coefficient along [100] is moderately high (150–200 μV/K), it is very high along [001] (250–300 μV/K). As a result, a very high value of dimensionless figure of merit (ZT) of 0.7 is achieved at 1073 K when measured along [001].


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