Spatial Distribution of Point Defect Clusters in Electron Irradiated GaSb and GaAs Single Crystals

1989 ◽  
Vol 62-63 ◽  
pp. 69-76
1991 ◽  
Vol 69 (12) ◽  
pp. 8092-8095 ◽  
Author(s):  
Krishan Lal ◽  
G. Bhagavannarayana ◽  
G. S. Virdi

2005 ◽  
Vol 38 (3) ◽  
pp. 448-454 ◽  
Author(s):  
G. Bhagavannarayana ◽  
A. Choubey ◽  
Yu. V. Shubin ◽  
Krishan Lal

Point defects and their clusters in bismuth germanate single crystals free from grain boundaries and having low density of dislocations were studied by high-resolution diffuse X-ray scattering measurements. Differences in defects in the colourless crystals (type A) and the crystals having yellow tinge (type B), which were grown with different raw materials, were investigated. In addition, interesting differences in defect structures in specimens from different regions of the same boule were investigated. Specimens with diffracting surfaces along (111), (112) and (100) planes were studied. A multicrystal X-ray diffractometer employing a well collimated and highly monochromated Mo Kα1 beam and set in (+,−,−,+) configuration was employed. The diffraction curves of all the samples were quite narrow with half-widths in the range 7–11 arcsec, which are close to the theoretically expected values, if instrumental broadenings are taken into account. The observed distribution of diffuse X-ray scattering (DXS) intensity showed that not all the point defects are isolated but a significant fraction are agglomerated into clusters. Experimental data of DXS intensity were analysed by using a phenomenological model for a small concentration of dislocation loops wherein the point defects are loosely clustered with weak interactions among them. From this analysis, the cluster radius R cl, cluster volume A cl, the number of point defects within a cluster N cl and the relative concentration of the point-defect clusters among the samples were estimated. It was observed that cluster sizes do not vary from sample to sample. However, it was found that the concentration of clusters is approximately twice in the coloured sample compared with that of the colourless sample from the same boule. Annealing of the crystals at 1273 K produced an increase in point-defect clusters by a factor of ∼200. It was accompanied by a reduction in volume of clusters by a factor of ∼0.14.


2006 ◽  
Vol 351 (1-3) ◽  
pp. 39-46 ◽  
Author(s):  
C.S. Becquart ◽  
A. Souidi ◽  
C. Domain ◽  
M. Hou ◽  
L. Malerba ◽  
...  

2011 ◽  
Vol 17 (6) ◽  
pp. 983-990 ◽  
Author(s):  
Hosni Idrissi ◽  
Stuart Turner ◽  
Masatoshi Mitsuhara ◽  
Binjie Wang ◽  
Satoshi Hata ◽  
...  

AbstractFocused ion beam (FIB) induced damage in nanocrystalline Al thin films has been characterized using advanced transmission electron microscopy techniques. Electron tomography was used to analyze the three-dimensional distribution of point defect clusters induced by FIB milling, as well as their interaction with preexisting dislocations generated by internal stresses in the Al films. The atomic structure of interstitial Frank loops induced by irradiation, as well as the core structure of Frank dislocations, has been resolved with aberration-corrected high-resolution annular dark-field scanning TEM. The combination of both techniques constitutes a powerful tool for the study of the intrinsic structural properties of point defect clusters as well as the interaction of these defects with preexisting or deformation dislocations in irradiated bulk or nanostructured materials.


2001 ◽  
Author(s):  
Peter V. Rybin ◽  
Dmitri V. Kulikov ◽  
Yuri V. Trushin ◽  
J. Petzoldt

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