Al+and N+implantation in silicon carbide: a role of point defect clusters in defect evolution

2001 ◽  
Author(s):  
Peter V. Rybin ◽  
Dmitri V. Kulikov ◽  
Yuri V. Trushin ◽  
J. Petzoldt
Keyword(s):  
Silicon Carbide ◽  
Point Defect ◽  
Defect Clusters ◽  
Defect Evolution ◽  
Point Defect Clusters

scholarly journals Atomic Configuration of Point Defect Clusters in Ion-Irradiated Silicon Carbide

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Y. R. Lin ◽  
L. G. Chen ◽  
C. Y. Hsieh ◽  
M. T. Chang ◽  
K. Y. Fung ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Point Defect ◽  
Atomic Configuration ◽  
Defect Clusters ◽  
Point Defect Clusters

Effect of displacement cascade structure and defect mobility on the growth of point defect clusters under irradiation

2006 ◽  
Vol 351 (1-3) ◽  
pp. 39-46 ◽  
Author(s):  
C.S. Becquart ◽  
A. Souidi ◽  
C. Domain ◽  
M. Hou ◽  
L. Malerba ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Clusters ◽  
Displacement Cascade ◽  
Cascade Structure ◽  
Defect Mobility ◽  
Point Defect Clusters

Point Defect Clusters and Dislocations in FIB Irradiated Nanocrystalline Aluminum Films: An Electron Tomography and Aberration-Corrected High-Resolution ADF-STEM Study

2011 ◽  
Vol 17 (6) ◽  
pp. 983-990 ◽  
Author(s):  
Hosni Idrissi ◽  
Stuart Turner ◽  
Masatoshi Mitsuhara ◽  
Binjie Wang ◽  
Satoshi Hata ◽  
...  
Keyword(s):  
High Resolution ◽  
Point Defect ◽  
Focused Ion Beam ◽  
Electron Tomography ◽  
Ion Beam ◽  
Dark Field ◽  
Internal Stresses ◽  
Defect Clusters ◽  
Point Defect Clusters ◽  
Aberration Corrected

AbstractFocused ion beam (FIB) induced damage in nanocrystalline Al thin films has been characterized using advanced transmission electron microscopy techniques. Electron tomography was used to analyze the three-dimensional distribution of point defect clusters induced by FIB milling, as well as their interaction with preexisting dislocations generated by internal stresses in the Al films. The atomic structure of interstitial Frank loops induced by irradiation, as well as the core structure of Frank dislocations, has been resolved with aberration-corrected high-resolution annular dark-field scanning TEM. The combination of both techniques constitutes a powerful tool for the study of the intrinsic structural properties of point defect clusters as well as the interaction of these defects with preexisting or deformation dislocations in irradiated bulk or nanostructured materials.

X-Ray Diffuse Scattering Investigation of Defects in Ion Implanted and Annealed Silicon

1998 ◽  
Vol 524 ◽  
Author(s):  
C. H. Chang ◽  
U. Beck ◽  
T. H. Metzger ◽  
J. R. Patel
Keyword(s):  
Ion Implantation ◽  
Point Defect ◽  
Point Defects ◽  
Diffuse Scattering ◽  
Grazing Incidence ◽  
X Rays ◽  
Scattered Intensity ◽  
X Ray ◽  
Defect Clusters ◽  
Point Defect Clusters

ABSTRACTTo characterize the point defects and point defect clusters introduced by ion implantation and annealing, we have used grazing incidence x-rays to measure the diffuse scattering in the tails of Bragg peaks (Huang Scattering). An analysis of the diffuse scattered intensity will allow us to characterize the nature of point defects or defect clusters introduced by ion implantation. We have also observed unexpected satellite peaks in the diffuse scattered tails. Possible causes for the occurrence of the peaks will be discussed.

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