Electrophoretic Deposition of Mullite Based Oxygen Diffusion Systems on C/C-Si-SiC Composites

Combining sol-gel synthesis of 3/2 mullite through hydrolysis and condensation of tetraethoxysilane and aluminum-tri-sec-butylate with electrophoretic deposition (EPD) yields sufficiently thick and homogeneous layers which transform into mullite at T ≥ 1000 °C. The characterisation of the mullite precursor during synthesis was performed through electroacustic measurements. The protectiveness of the deposited mullite layers was tested in air in the temperature range 1200 °C ≤ T ≤ 1550 °C by means of isothermal thermogravimetric analysis for up to 200 hours. Comparing the oxidation rate of mullite coated C/C-Si-SiC samples to that of uncoated reference samples clearly demonstrated that mullite offers a significant improvement to the oxidation resistance of the uncoated material. At temperatures above 1600 °C the protectiveness of the deposited layer is reduced due to the existence of a liquid phase and the formation of CO bubbles above the cracks in the SiC layer. In order to prolong the protectiveness of our mullite layers at higher temperatures we deposited an additional layer from a suspension of mullite precursor with 5 wt. % of Al2O3 powder. The protectiveness of so obtained mullite and mullite/ Al2O3 layers was also tested under cyclic conditions at 1500 °C and 1550 °C. These experiments clearly demonstrated that all samples withstood at least for 4-10 cycles which were performed subsequently in different time intervals (from 2-3 days to 1 h).