Synthesis and Structure of Sol-Gel Derived PST/Bi2Ti2O7 Composite Thin Films

PST/Bi2Ti2O7 composite thin films were prepared by sol-gel method through heavily doping Bi3+ into lead strontium titanate (PST). The film with mono pyrochlore phase of Bi2Ti2O7 was also fabricated by controlling the Ti content in precursors. XRD, SEM and impedance analyzer measured the phase status, morphology and dielectric properties of the thin films, respectively. As a result, in the composite thin films, there was some Pb and Sr dissolved in Bi2Ti2O7, and the amount of dissolving ions decreased with the reduction of their composition in precursors. Bi4Ti3O12 impurity in crystalline Bi2Ti2O7 was due to the instability of Bi, and excess Ti in stoichiometry could make the film maintain to be mono pyrochlore phase. PST/Bi2Ti2O7 composite thin films had lower permittivity and lower dielectric loss than mono PST thin films.

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Preparation and characterization of barium strontium titanate/silicon nanoporous pillar array composite thin films by a sol-gel method

International Journal of Minerals Metallurgy and Materials ◽

10.1007/s12613-012-0625-z ◽

2012 ◽

Vol 19 (8) ◽

pp. 762-767 ◽

Cited By ~ 1

Author(s):

Shun-hua Xiao ◽

Wei-fen Jiang

Keyword(s):

Thin Films ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Sol Gel ◽

Composite Thin Films ◽

Pillar Array ◽

Gel Method ◽

Sol Gel Method ◽

Barium Strontium

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Enhanced Dielectric Properties of Pb0.3Sr0.7TiO3 Thin Films by Ultrasonic Processing

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.252.232 ◽

2012 ◽

Vol 252 ◽

pp. 232-236 ◽

Cited By ~ 1

Author(s):

Xiao Hua Sun ◽

Xiu Neng Li ◽

Ying Yang ◽

Min Wu ◽

Shuang Hou ◽

...

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Dielectric Loss ◽

Leakage Current ◽

Thermal Evolution ◽

Sol Gel ◽

Precursor Solution ◽

Ultrasonic Processing ◽

Gel Method ◽

Sol Gel Method

Pb0.3Sr0.7TiO3 (PST) thin films have been prepared from precursor solution sonicated for different time on Pt/Ti/SiO2/Si substrates by sol-gel method. The effect of ultrasonic processing on the chemical bonding of PST precursor solution and the thermal evolution of PST dry gel are characterized with FT-IR and TG-DT technology. The structure, dielectric properties and leakage current density of PST thin films are investigated as functions of sol ultrasonic processing time. It’s found that ultrasonic processing brings about the partial sol structure rearrangement, the delay of PST formative temperature, the reduction of crystallization and dielectric constant, and the significant improvement of leakage current, dielectric loss and the figure of merit (FOM). The results suggest that the enhancement in the quality of thin films prepared with sol-gel method can be obtained by the suitable ultrasonic processing on precursor solutions. The PST thin film prepared from precursor solution sonicated for 8 h shows the highest FOM for its appropriate tunability of 57.36% and low dielectric loss of 0.0144.

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