Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers

2011 ◽  
Vol 470 ◽  
pp. 188-193 ◽  
Author(s):  
Koji Kita ◽  
Atsushi Eika ◽  
Tomonori Nishimura ◽  
Kosuke Nagashio ◽  
Akira Toriumi
Keyword(s):  
Resistive Switching ◽  
Film Deposition ◽  
Bilayer Film ◽  
Film Properties ◽  
Oxide Interfaces ◽  
Crystalline Film ◽  
Bilayer Films ◽  
Switching Characteristics ◽  
Nio Films ◽  
Deposition Conditions

Two kinds of NiO films with different crystallinity were fabricated by controlling the film deposition conditions. The well-crystalline film showed resistive switching characteristics whereas the poorly-crystalline film did not. From I-V characteristics of the NiO bilayer film consisting of those two kinds of films, it was found that the initial characteristics significantly differed according to the bias polarity. The forming voltage became lower and had less variety when the well-crystalline side was positively-biased. These results suggest that the forming voltage and currents are controllable by modifying the film properties at the metal-oxide interfaces.

Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

2011 ◽  
Vol 520 (4) ◽  
pp. 1246-1250 ◽  
Author(s):  
Kou-Chen Liu ◽  
Wen-Hsien Tzeng ◽  
Kow-Ming Chang ◽  
Jiun-Jie Huang ◽  
Yun-Ju Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Resistive Switching ◽  
Film Properties ◽  
Switching Characteristics

scholarly journals An interdisciplinary experience on the development of Dye-Cell technology

2001 ◽  
Vol 3 (3) ◽  
pp. 137-141 ◽  
Author(s):  
Christian Graziani Garcia ◽  
Neyde Yukie Murakami Iha
Keyword(s):  
Solar Cells ◽  
Collaborative Work ◽  
Modern Science ◽  
Film Deposition ◽  
Research Groups ◽  
Film Properties ◽  
Dye Sensitized ◽  
Photoelectrochemical Solar Cells ◽  
The University ◽  
Deposition Conditions

Under a special program supported by the University of São Paulo (USP) for the development of strategic fields of research, interdisciplinar discussion on the development of photovoltaics and energy technology has been established. Several aspects concerned to solar energy and PV technology were discussed in regular meetings along a year by professionals of different domains. As a result of the program, a collaborative work on the deposition ofTiO2films employed in photoelectrochemical solar cells has been established between theLaboratory of Inorganic Photochemistry and Energy Conversionat the IQ-USP and other research groups.Preparation ofTiO2emulsions from distinct methods were performed and compared. Spin-coating and painting techniques have been employed for the deposition ofTiO2films over TCO substrates. Both techniques resulted in transparent homogeneousTiO2films which were successfully used as dye-sensitized photoanodes in solar cells. The results show that thin-film properties, such as thickness and transparency, can be controlled through the deposition technique and that photoelectrochemical measurements carried out by our group have been performed under appropriate film deposition conditions.This experience shows also that different institutions, with distinct purposes, can interact and work together to prepare qualified professionals for many areas of modern science and technology.

Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes

2011 ◽  
Vol 519 (11) ◽  
pp. 3798-3803 ◽  
Author(s):  
C. Dumas ◽  
D. Deleruyelle ◽  
A. Demolliens ◽  
Ch. Muller ◽  
S. Spiga ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Cu Pillar ◽  
Switching Characteristics ◽  
Nio Films

Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Characteristics

Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan
Keyword(s):  
Resistive Switching ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Hysteresis Curve ◽  
Bipolar Switching ◽  
Post Annealing ◽  
Endurance Tests ◽  
Bilayer Device ◽  
Switching Characteristics ◽  
Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

scholarly journals Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sera Kwon ◽  
Min-Jung Kim ◽  
Kwun-Bum Chung
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Sio2 Nanoparticles ◽  
Visible Range ◽  
Resistive State ◽  
Switching Device ◽  
Structural Density ◽  
Multi Level ◽  
Switching Characteristics ◽  
Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

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