Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

2011 ◽  
Vol 520 (4) ◽  
pp. 1246-1250 ◽  
Author(s):  
Kou-Chen Liu ◽  
Wen-Hsien Tzeng ◽  
Kow-Ming Chang ◽  
Jiun-Jie Huang ◽  
Yun-Ju Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Resistive Switching ◽  
Film Properties ◽  
Switching Characteristics

Pulsed Laser Deposited Oxide Green Emitting Thin Film Phosphors : Optimization of Growth Conditions

2006 ◽  
Vol 988 ◽  
Author(s):  
P. Thiyagarajan ◽  
M. Kottaismay ◽  
M S Ramachandra Rao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Diffuse Reflectance Spectroscopy ◽  
Quartz Substrate ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Ex Situ ◽  
Morphological Studies

AbstractStructural and photoluminescence (PL) properties of Zn2(1-x)MnxSiO4 (1 ≤ x ≤ 5) and diffuse reflectance spectroscopy (DRS) and morphological studies of ZnGa2O4:Mn thin film green emitting phosphors grown using pulsed laser deposition (PLD) technique have been investigated. Zn2(1-x)MnxSiO4 thin films grown on Si substrate at 700°C in 300 mTorr of oxygen partial pressure, upon ex-situ annealing at higher temperatures exhibit superior PL intensity. ZnGa2O4:Mn phosphor thin films grown on quartz substrate at 650oC and in-situ annealed in 300mTorr of oxygen partial pressure show better emission intensity. For both Zn2SiO4:Mn and ZnGa2O4:Mn phosphors, luminescence can be assigned to 4T1 – 6A1 transition of Mn2+ within the 3d orbital giving rise to emission at 525 and 503 nm, respectively.

Influence of Bias-Induced Copper Diffusion on the Resistive Switching Characteristics of a SiON Thin Film

2011 ◽  
Vol 14 (2) ◽  
pp. H93 ◽  
Author(s):  
Po-Chun Yang ◽  
Ting-Chang Chang ◽  
Shih-Ching Chen ◽  
Yu-Shih Lin ◽  
Hui-Chun Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Copper Diffusion ◽  
Switching Characteristics

La1−xBaxMnOz thin film growth by ion beam sputtering: effects of oxygen partial pressure

2001 ◽  
Vol 229 (1-4) ◽  
pp. 415-418 ◽  
Author(s):  
M. Tada ◽  
J. Yamada ◽  
V.V. Srinivasu ◽  
V. Sreedevi ◽  
H. Kohmoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Ion Beam Sputtering ◽  
Beam Sputtering
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