Lithium Intercalation Properties of Lithium Tetratitanate Obtained by Nanosheets Process

Lithium intercalation properties of lithium tetratitanate obtained by nanosheets process (NS-LT4) was examined and compared with those of conventional lithium tetratitanate. NS-LT4 was prepared by restacking of tetratitanate nanosheets with LiOH aqueous solution. NS-LT4 exhibited a reversible capacity of approximately 140 mAh g-1, which corresponds to approximately two Li insertions per formula unit. Two Li insertions per formula unit mean that half of the Ti atoms were reduced from a tetravalent state to a trivalent state. The quasi open-circuit voltage of NS-LT4 was comparable with that of conventional lithium tetratitanate, and the voltage change of NS-LT4 as the change in lithium composition was greater than that of conventional lithium tetratitanate. This potential behavior would be caused by the unique stacking structure with stacking fault and random rotation in nanosheet-plane generated during the restacking of nanosheets.

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Influence of doping on the electrochemical properties of anatase

MRS Proceedings ◽

10.1557/proc-756-ee1.3 ◽

2002 ◽

Vol 756 ◽

Author(s):

Marina V. Koudriachova ◽

Simon W. de Leeuw

Keyword(s):

Phase Separation ◽

Electrochemical Properties ◽

Electron Density ◽

First Principles ◽

Open Circuit Voltage ◽

Open Circuit ◽

Lithium Intercalation ◽

First Principles Calculations ◽

Voltage Profile ◽

Li Content

The effect of substitution on the intercalation properties of anatase-structured titania has been investigated in first principles calculations. Ti4+-ions were substituted by Zr4+, Al3+ and Sc3+ respectively and O2- -ions by N3-. For each compound the open circuit voltage profile (OCV) was calculated and compared to anatase. Lithium intercalation proceeds as in pure anatase through a phase separation into a Li-rich and a Li-poor phase in all cases examined here. The Li-content of the phases depends on the nature of the dopant and its concentration. Substitution by N3--ions does not lead to lower potentials, whereas doping with trivalent Sc3+- and Al3+- ions decreases the intercalation voltage. Substitution by tetravalent Zr4+-ions within the range of solubility does not significantly affect the OCV of anatase. A correlation is observed between the predicted equilibrium voltage and the participation of the Ti4+-ions in accommodating the donated electron density upon lithiation.

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A Metal-Insulator-Semiconductor Solar Cell With High Open-Circuit Voltage Using a Stacking Structure

IEEE Electron Device Letters ◽

10.1109/led.2010.2073437 ◽

2010 ◽

Vol 31 (12) ◽

pp. 1419-1421 ◽

Cited By ~ 13

Author(s):

Tzu-Yueh Chang ◽

Chun-Lung Chang ◽

Hsin-Yu Lee ◽

Po-Tsung Lee

Keyword(s):

Solar Cell ◽

Open Circuit Voltage ◽

Open Circuit ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Stacking Structure

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Microcrystalline (Si,Ge):H Solar Cells

MRS Proceedings ◽

10.1557/proc-762-a7.6 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 1

Author(s):

Jianhua Zhu ◽

Vikram L. Dalal

Keyword(s):

Solar Cells ◽

Buffer Layer ◽

Quantum Efficiency ◽

Fill Factor ◽

Open Circuit Voltage ◽

Defect Density ◽

Cell Structure ◽

Open Circuit ◽

Base Layer ◽

Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

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