Influence of Phase-Change Materials and Additional Layer on Performance of Lateral Phase-Change Memories
Keyword(s):
Performance of lateral phase change memories (LPCMs) is investigated by both electrical characterization and finite element analysis. Ge2Sb2Te5 lateral PCMs (GST-LPCMs) exhibit a low reset current but a bad endurance. By replacing GST with Sb2Te3 (ST) and adding a TiN layer between ST and electrodes, the ST-TiN-LPCMs are demonstrated to have a much improved endurance. Finite element analysis of the LPCMs with electric-thermal structural interaction shows that thermal confinement makes GST-LPCMs low-power consumptive but that high level stress makes them readily broken. In contrast, ST-TiN-LPCMs experience low level stress during operation but high power consumption is required.
2013 ◽
Vol 750-752
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pp. 1211-1214
2014 ◽
Vol 140
(1)
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pp. 04013009
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1986 ◽
Vol 3
(5)
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pp. 180
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1994 ◽
Vol 37
(20)
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pp. 3441-3465
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1993 ◽
Vol 104
(1)
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pp. 19-30
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1991 ◽
Vol 31
(1)
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pp. 1-7
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