Facile Fabrication of Open-Ended High Aspect-Ratio Anodic TiO2 Nanotube Films and their Applications

2012 ◽  
Vol 512-515 ◽  
pp. 1659-1662 ◽  
Author(s):  
Jian Jun Liao ◽  
Shi Wei Lin ◽  
Neng Qian Pan ◽  
Xian Kun Cao ◽  
Jian Bao Li

In the present work, we demonstrated a facile process to prepare an open-ended high aspect-ratio TiO2 nanotube films through separating the anodic TNT array from the Ti substrate by a small reverse bias and opening the tube bottom by a chemical etching. The possible mechanisms of film detachment and pore opening processes have been briefly discussed. Such a process allows controlling the open-ended morphology by the straightforward chemical etching, which shows great potential in many applications, such as flow-through photocatalytic reactions, biofiltration, and diffusion controlling, and so on. An example using the open-ended TNT films is finally given as a flow-through photocatalytic reactor. The photocatalytic film has been shown to have multiple functions such as physical separation of contaminants, filtration, and decomposition of organic pollutants during diffusion.

2018 ◽  
Author(s):  
Gen Hayase

By exploiting the dispersibility and rigidity of boehmite nanofibers (BNFs) with a high aspect ratio of 4 nm in diameter and several micrometers in length, multiwall-carbon nanotubes (MWCNTs) were successfully dispersed in aqueous solutions. In these sols, the MWCNTs were dispersed at a ratio of about 5–8% relative to BNFs. Self-standing BNF–nanotube films were also obtained by filtering these dispersions and showing their functionality. These films can be expected to be applied to sensing materials.


RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).


2012 ◽  
Vol 1512 ◽  
Author(s):  
Jian-Wei Ho ◽  
Qixun Wee ◽  
Jarrett Dumond ◽  
Li Zhang ◽  
Keyan Zang ◽  
...  

ABSTRACTA combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.


Micromachines ◽  
2020 ◽  
Vol 11 (4) ◽  
pp. 378 ◽  
Author(s):  
Hailiang Li ◽  
Changqing Xie

We report a robust, sidewall transfer metal assistant chemical etching scheme for fabricating Al2O3 nanotube arrays with an ultra-high aspect ratio. Electron beam lithography followed by low-temperature Au metal assisted chemical etching (MacEtch) is used to pattern high resolution, high aspect ratio, and vertical silicon nanostructures, used as a template. This template is subsequently transferred by an atomic layer deposition of the Al2O3 layer, followed by an annealing process, anisotropic dry etching of the Al2O3 layer, and a sacrificial silicon template. The process and characterization of the Al2O3 nanotube arrays are discussed in detail. Vertical Al2O3 nanotube arrays with line widths as small as 50 nm, heights of up to 21 μm, and aspect ratios up to 420:1 are fabricated on top of a silicon substrate. More importantly, such a sidewall transfer MacEtch approach is compatible with well-established silicon planar processes, and has the benefits of having a fully controllable linewidth and height, high reproducibility, and flexible design, making it attractive for a broad range of practical applications.


2006 ◽  
Vol 35 (2) ◽  
pp. 195-199 ◽  
Author(s):  
Lingbo Zhu ◽  
Jianwen Xu ◽  
Yonghao Xiu ◽  
Dennis W. Hess ◽  
C. P. Wong

2014 ◽  
Vol 24 (12) ◽  
pp. 125026 ◽  
Author(s):  
Katherine Booker ◽  
Maureen Brauers ◽  
Erin Crisp ◽  
Shakir Rahman ◽  
Klaus Weber ◽  
...  

2015 ◽  
Vol 40 ◽  
pp. 391-396 ◽  
Author(s):  
Youngseok Lee ◽  
Heeseok Kim ◽  
Shahzada Qamar Hussain ◽  
Sangmyung Han ◽  
Nagarajan Balaji ◽  
...  

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