On the Formation of Highly Symmetric Impurity-Vacancy Clusters in Ion-Implanted FCC Metals

The Diffusion Trapping Model has been used to obtain the positron annihilation Doppler broadening lineshape parameter in ZnO and O+, B+, N+, Al+ implanted ZnO films. The concentration of vacancy clusters is found to be related to the atomic number and the fluence of the implanted ion. The S-parameter is found to be largest in the case of implantation of Al+ ions and is minimum for the implantation of B+ ions. Thus, the vacancy clusters are found to be largest in the case of Al+ implantation. The calculated results have been compared with the experimental value.

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Effects of Uniaxial Strain on the Structures of Vacancy Clusters in FCC Metals

Materials Science Forum ◽

10.4028/www.scientific.net/msf.898.1340 ◽

2017 ◽

Vol 898 ◽

pp. 1340-1350 ◽

Cited By ~ 1

Author(s):

Fei Ye ◽

Hong Bo Xv ◽

Jin Mei Liu ◽

Ke Tong

Keyword(s):

Compressive Strain ◽

Structural Evolution ◽

The Body ◽

Uniaxial Strain ◽

Dominant Type ◽

Vacancy Clusters ◽

Fcc Metals ◽

Stacking Fault Tetrahedron ◽

Strain Axis ◽

Simulation Condition

The effects of [001] uniaxial strain on the stable structures and structural evolution of vacancy clusters in fcc metals, Cu, Ni, Al and Fe, have been studied and compared. Under uniaxial strain, the clusters in all these metals tend to align parallel or perpendicular to the strain axis under tensile or compressive strain. Moreover, both the body cluster and the {001} planar cluster become the dominant types. In addition, the stacking fault tetrahedron cluster becomes another dominant type in Al under compressive strain. The cluster structures in Fe are disordered under strain possibly because the pure fcc Fe is thermodynamically unstable under the current simulation condition.

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Slow Positron Annihilation in Ion-Implanted Silicon

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.280-281.21 ◽

2008 ◽

Vol 280-281 ◽

pp. 21-28 ◽

Cited By ~ 1

Author(s):

Girjesh Singh ◽

S.B. Shrivastava ◽

M.H. Rathore

Keyword(s):

Positron Annihilation ◽

Shape Parameter ◽

Positron Energy ◽

Slow Positron ◽

Vacancy Clusters ◽

S Parameter ◽

Trapping Model ◽

Line Shape Parameter ◽

Incident Positron ◽

Ion Implanted

The mechanism of slow positron annihilation in ion-implanted Si has been discussed in terms of the Diffusion-Trapping model (DTM). The trapping of positron has been considered in native vacancies (monovacancies) and ion induced vacancies i.e. vacancy clusters. The model has been used to calculate the Doppler broadening line shape parameter (S-parameter) as a function of incident positron energy for different ion-implanted Si. It has been found that at lower energies the monovacancies and vacancy clusters both contribute to the S-parameter while, with the increase in positron energy the vacancy clusters are reduced. The S-parameter is found to be dependent on the fluency of the implanted ions.

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FIM of vacancy clusters in the subsurface volume of the ion-implanted Pd(CuAg) alloy

Surface Science ◽

10.1016/s0039-6028(97)00142-8 ◽

1997 ◽

Vol 384 (1-3) ◽

pp. 46-51 ◽

Cited By ~ 11

Author(s):

V.A. Ivchenko ◽

V.V. Ovchinnikov ◽

B.Yu. Goloborodsky ◽

N.N. Syutkin

Keyword(s):

Vacancy Clusters ◽

Ion Implanted

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Lattice-site location of ion-implanted impurities in copper and other fcc metals

Physical Review B ◽

10.1103/physrevb.13.969 ◽

1976 ◽

Vol 13 (3) ◽

pp. 969-979 ◽

Cited By ~ 62

Author(s):

J. A. Borders ◽

J. M. Poate

Keyword(s):

Lattice Site ◽

Site Location ◽

Fcc Metals ◽

Ion Implanted

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High thermal stability of vacancy clusters formed in MeV Si-self-ion-implanted Si

Applied Physics Letters ◽

10.1063/1.2963480 ◽

2008 ◽

Vol 93 (4) ◽

pp. 041908 ◽

Cited By ~ 2

Author(s):

Lin Shao ◽

P. E. Thompson ◽

Q. Y. Chen ◽

K. B. Ma ◽

J. R. Liu ◽

...

Keyword(s):

Thermal Stability ◽

High Thermal Stability ◽

Vacancy Clusters ◽

Thermal Stability Of ◽

Ion Implanted

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Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100054765 ◽

1982 ◽

Vol 40 ◽

pp. 460-461

Author(s):

P. Ling ◽

R. Gronsky ◽

J. Washburn

Keyword(s):

Electron Diffraction ◽

Ion Implantation ◽

Diffraction Analysis ◽

Diffraction Pattern ◽

Direct Consequence ◽

The Other ◽

Electron Diffraction Analysis ◽

Defect Microstructures ◽

Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

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Defects in ion implanted silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100109070 ◽

1978 ◽

Vol 36 (1) ◽

pp. 386-387

Author(s):

J.A. Lambert ◽

P.S. Dobson

Keyword(s):

Defect Structure ◽

Dislocation Loops ◽

Frank Loop ◽

Burgers Vector ◽

Temperature Range ◽

Perfect Dislocation ◽

Contrast Analysis ◽

Image Position ◽

Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

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