Arsenic Antisite-Arsenic Vacancy Complex and Gallium Vacancy in GaAs: A Kind of Bistability Pair of Intrinsic Defects?

1995 ◽  
Vol 196-201 ◽  
pp. 1061-1066 ◽  
Author(s):  
K.H. Wietzke ◽  
F.K. Koschnick ◽  
Johann Martin Spaeth
Keyword(s):  
Intrinsic Defects ◽  
Gallium Vacancy ◽  
Vacancy Complex ◽  
Antisite Arsenic ◽  
Arsenic Vacancy

EPR Observation of the Arsenic Antisite - Arsenic Vacancy Complex

1986 ◽  
Vol 10-12 ◽  
pp. 299-303 ◽  
Author(s):  
Hans Jürgen von Bardeleben ◽  
J.C. Bourgoin ◽  
A. Miret
Keyword(s):  
Vacancy Complex ◽  
Antisite Arsenic ◽  
Arsenic Vacancy

Identification of the arsenic-antisite-arsenic-vacancy complex in electron-irradiated GaAs

1986 ◽  
Vol 34 (2) ◽  
pp. 1360-1362 ◽  
Author(s):  
H. J. von Bardeleben ◽  
J. C. Bourgoin ◽  
A. Miret
Keyword(s):  
Vacancy Complex ◽  
Antisite Arsenic ◽  
Arsenic Vacancy

Formation of Intrinsic Defects at MBE-Grown GaAs/AlAs Interfaces

1993 ◽  
Vol 312 ◽  
Author(s):  
P. Krispin ◽  
R. Hey ◽  
H. Kostial ◽  
M. Höricke
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Depth Profiling ◽  
Intrinsic Defects ◽  
Capacitance Voltage ◽  
Charge States ◽  
Transient Spectroscopy ◽  
Silicon Doped ◽  
Arsenic Vacancy

AbstractWe report on a detailed investigation of MBE-grown isotype silicon-doped heterostructures by capacitance/voltage (C/V) technique and deep-level transient spectroscopy (DLTS). A sequence of electrically active defects is found. By depth profiling of the density of the dominant levels it is demonstrated that the corresponding defects are concentrated at the GaAs-on-AlAs (inverted) interface. By comparison with studies on irradiation-induced levels in LPE- or VPE-grown AlGaAs we conclude that the defects at the GaAs/AlAs interface are most probably linked to different charge states of the arsenic vacancy VAs and VAs−ASi pairs.

Model of the Jahn-Teller Complex Formed in GaAs by a Gallium Vacancy and a Donor Substituting for a Gallium Atom*

1996 ◽  
Vol 1 (1) ◽  
pp. 209-215
Author(s):  
N. S. Averkiev ◽  
A. A. Gutkin ◽  
S. Yu. Il’inskii ◽  
M. A. Reshchikov ◽  
V. E. Sedov
Keyword(s):  
Gallium Atom ◽  
Gallium Vacancy ◽  
Jahn Teller

Highly electroconductive and uniform WS2 film growth by sulfurization of W film using diethyl sulfide

2021 ◽  
Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
High Performance ◽  
Film Growth ◽  
Transition Metal Dichalcogenides ◽  
Electronic Systems ◽  
Intrinsic Defects ◽  
Diethyl Sulfide ◽  
Metal Dichalcogenides

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...

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