Strong thermal conductivity dependence on arsenic-vacancy complex formation in arsenic-doped silicon

2019 ◽  
Vol 126 (19) ◽  
pp. 195104
Author(s):  
Yongjin Lee ◽  
Gyeong S. Hwang
Keyword(s):  
Thermal Conductivity ◽  
Complex Formation ◽  
Vacancy Complex ◽  
Doped Silicon ◽  
Arsenic Vacancy

(Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory

2007 ◽  
pp. 307-312
Author(s):  
Gerhard Pensl ◽  
Frank Schmid ◽  
Sergey A. Reshanov ◽  
Heiko B. Weber ◽  
M. Bockstedte ◽  
...  
Keyword(s):  
Complex Formation ◽  
Nitrogen Vacancy ◽  
Vacancy Complex

scholarly journals Electron–phonon heat transport and electronic thermal conductivity in heavily doped silicon-on-insulator film

2003 ◽  
Vol 94 (5) ◽  
pp. 3201-3205 ◽  
Author(s):  
P. Kivinen ◽  
A. Savin ◽  
M. Zgirski ◽  
P. Törmä ◽  
J. Pekola ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Heat Transport ◽  
Silicon On Insulator ◽  
Electronic Thermal Conductivity ◽  
Insulator Film ◽  
Doped Silicon ◽  
Heavily Doped

Ferromagnetic effects on helium-vacancy complex formation in BCC Fe

2019 ◽  
Vol 31 (12) ◽  
pp. 125401 ◽  
Author(s):  
Haohua Wen ◽  
Yifeng Wu ◽  
Jianyi Liu ◽  
Yue Zheng
Keyword(s):  
Complex Formation ◽  
Vacancy Complex

Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide

2001 ◽  
Vol 64 (19) ◽  
Author(s):  
M. S. Janson ◽  
A. Hallén ◽  
M. K. Linnarsson ◽  
B. G. Svensson
Keyword(s):  
Silicon Carbide ◽  
Complex Formation ◽  
Hydrogen Diffusion ◽  
Doped Silicon

EPR Observation of the Arsenic Antisite - Arsenic Vacancy Complex

1986 ◽  
Vol 10-12 ◽  
pp. 299-303 ◽  
Author(s):  
Hans Jürgen von Bardeleben ◽  
J.C. Bourgoin ◽  
A. Miret
Keyword(s):  
Vacancy Complex ◽  
Antisite Arsenic ◽  
Arsenic Vacancy

Thermal Conductivity Model for Nearly Pure and Doped Thin Silicon Layers at High Temperatures

2003 ◽  
Author(s):  
M. Asheghi ◽  
K. E. Goodson
Keyword(s):  
Experimental Data ◽  
Thermal Conductivity ◽  
Temperature Field ◽  
Size Effect ◽  
Thermal Conduction ◽  
Silicon On Insulator ◽  
Semiconducting Materials ◽  
Algebraic Expressions ◽  
Doped Silicon ◽  
Thermal Conductivity Model

Simulation of the temperature field in Silicon-on-insulator (SOI) transistors can benefit from better models and data for thermal conduction in pure and doped semiconducting materials. This work develops simple algebraic expressions to account for the reduction in thermal conductivity due to the size effect and to the presence of dopant impurities. The model applies to temperatures above 300 K and the results are compared with experimental data for pure and doped silicon layers.

Doping and impurity-vacancy complex formation during vapour-phase epitaxy of gallium arsenide

1992 ◽  
Vol 123 (3-4) ◽  
pp. 529-536 ◽  
Author(s):  
I.A. Bobrovnikova ◽  
L.G. Lavrent'eva ◽  
M.P. Rusaikin ◽  
M.D. Vilisova
Keyword(s):  
Gallium Arsenide ◽  
Complex Formation ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Vacancy Complex
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