Negative Capacitance Phenomena in CZT Room Temperature Radiation Detectors

2005 ◽  
Vol 480-481 ◽  
pp. 399-404
Author(s):  
Mahmoud A. Hassan
Keyword(s):  
Bias Voltage ◽  
Room Temperature ◽  
Bulk Material ◽  
Radiation Detector ◽  
Radiation Detectors ◽  
Negative Capacitance ◽  
Low Frequencies ◽  
Temperature Radiation ◽  
Czt Detectors ◽  
Small Voltage

CdZnTe , Cadmium zinc telluride (CZT) is an interesting room temperature radiation detector. This research paper is reporting a negative capacitance behavior of CZT detectors at bias voltages around 60V. Initially at 0V, the CZT capacitance is positive and decreases with bias voltage increase. At around 60V, the measured capacitance approaches zero, then with small voltage increase , capacitance value reverses sign and starts to increase in the negative direction with increasing bias voltage . This effect is stable at 100 kHz. The behavior of low and other quality detectors can differ, low quality detectors can show negative capacitance at low bias voltages and low frequencies. The initial explanation of this phenomena is due to non-uniform distribution of impurities inside the bulk material.

Optical Studies of the Internal Electric Field Distributions of CdZnTe Detectors Under Bias Conditions

1997 ◽  
Vol 487 ◽  
Author(s):  
H. W. Yao ◽  
R. J. Anderson ◽  
R. B. James ◽  
R. W. Olsen
Keyword(s):  
Electric Field ◽  
Radiation Detector ◽  
Radiation Detectors ◽  
Uniform Electric Field ◽  
Internal Electric Field ◽  
Field Distributions ◽  
Intensity Changes ◽  
Temperature Radiation ◽  
Cdznte Detectors ◽  
Czt Detectors

AbstractThe internal electric field distributions of the CdZnTe (CZT) detectors under bias were characterized by optical polarized transmission at a 952 nm illumination utilizing the Pockels electro-optic effect. Two-dimensional (2D) images mapping the internal electrical field intensity changes were obtained to study the performance of CZT room-temperature radiation detectors. Planar and a P-I-N structured CZT detectors were investigated under different operating bias voltages. Analysis of optical profiles from a planar single crystal detector provides a quantitative nondestructive description of the electric field or voltage distributions inside a radiation detector. The P-I-N structured CZT detector showed a nearly uniform electric field in a width which varied with the operating bias voltage. An energyband model of a semiconductor junction with a depletion layer was employed to understand the results.

High quality planar Cd1-xMnxTe room-temperature radiation detectors

2021 ◽  
Vol 119 (6) ◽  
pp. 062103
Author(s):  
A. Brovko ◽  
P. Rusian ◽  
L. Chernyak ◽  
A. Ruzin
Keyword(s):  
Room Temperature ◽  
Radiation Detectors ◽  
High Quality ◽  
Temperature Radiation

scholarly journals Role of selenium addition to CdZnTe matrix for room-temperature radiation detector applications

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
U. N. Roy ◽  
G. S. Camarda ◽  
Y. Cui ◽  
R. Gul ◽  
A. Hossain ◽  
...  
Keyword(s):  
Room Temperature ◽  
Radiation Detector ◽  
Temperature Radiation

scholarly journals Pulse-shape analysis in Cd0.9Zn0.1Te0.98Se0.02 room-temperature radiation detectors

2020 ◽  
Vol 116 (16) ◽  
pp. 162107 ◽  
Author(s):  
Sandeep K. Chaudhuri ◽  
Mohsin Sajjad ◽  
Krishna C. Mandal
Keyword(s):  
Shape Analysis ◽  
Pulse Shape ◽  
Room Temperature ◽  
Radiation Detectors ◽  
Pulse Shape Analysis ◽  
Temperature Radiation

scholarly journals Growth and characterization of CdTeSe for room-temperature radiation detector applications

2013 ◽  
Author(s):  
U. N. Roy ◽  
A. E. Bolotnikov ◽  
G. S. Camarda ◽  
Y. Cui ◽  
A. Hossain ◽  
...  
Keyword(s):  
Room Temperature ◽  
Radiation Detector ◽  
Temperature Radiation

Process Monitoring for Fabrication of Mercuric Iodide Room Temperature Radiation Detectors

1993 ◽  
Vol 324 ◽  
Author(s):  
J. M. Van Scyoc ◽  
T. E. Schlesinger ◽  
H. Yao ◽  
R. B. James ◽  
M. Natarajan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Radiation Detectors ◽  
Electrical Contacts ◽  
Careful Study ◽  
Mercuric Iodide ◽  
Optical Functions ◽  
Processing Step ◽  
Material Choice ◽  
Temperature Radiation ◽  
Processing Steps

AbstractIn the fabrication of mercuric iodide room temperature radiation detectors, as in any semiconductor process, the quality of the final device can be very sensitive to the details of the processing steps. Each processing step can either reduce the intrinsic defects and those extrinsic defects introduced by earlier steps, or it can introduce new defects. In mercuric iodide these defects can act as trapping and recombination centers, thereby degrading immediate device performance or leading to long-term reliability problems. With careful study and monitoring of each step, the process can be modified to improve the end product. In this work we used several techniques to study processing steps and their effects. Photoluminescence spectroscopy and photoionization revealed defects introduced during processing. One critical step is the formation of electrical contacts, as both the material choice and deposition method have an impact. Four point probe sheet resistance methods were used to characterize the loss of material from the contact as it reacted with or moved into the bulk semiconductor. Ellipsometry was used to characterize the intrinsic optical functions of the material, and to study the effects of surface aging on these functions. Results from this work provide suggestions for the modification and monitoring of the detector fabrication process.

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