High Temperature Contacts to GaN and SiC Based on TiBx Nanostructure Layers
2005 ◽
Vol 483-485
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pp. 1061-1064
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Keyword(s):
In this communication we present the results of study of new contact systems to GaN epitaxial layers grown on sapphire and n-type 6H-SiC monocrystals. The TiBx nanostructure phase has been used during manufacturing Ti – Al – TiBx – Au and TiBx contact systems. The n-GaN epitaxial layers of 1 µm thickness were grown on [0001] sapphire substrate by vapor-phase epitaxy. The n-type 6H-SiC monocrystals were grown by Lely method with the donor concentration of 2x1018 cm3. The layers of Ti, Al, TiBx and Au were deposited by magnetron sputtering followed by high-temperature annealing.
Keyword(s):
2007 ◽
Vol 46
(4A)
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pp. 1458-1462
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Keyword(s):
2019 ◽
Vol 58
(SC)
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pp. SC1002
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1999 ◽
Vol 38
(Part 1, No. 2B)
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pp. 1234-1238
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1997 ◽
Vol 36
(Part 1, No. 6A)
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pp. 3381-3384
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Keyword(s):
2018 ◽
Vol 482
◽
pp. 1-8
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Keyword(s):