scholarly journals Impact of intermediate high temperature annealing on the properties of AlN/sapphire templates grown by metalorganic vapor phase epitaxy

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1002 ◽  
Author(s):  
Sebastian Walde ◽  
Sylvia Hagedorn ◽  
Markus Weyers
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Temperature Annealing

Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy

2007 ◽  
Vol 46 (No. 14) ◽  
pp. L307-L310 ◽  
Author(s):  
Krishnan Balakrishnan ◽  
Akria Bandoh ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Dislocation Content

High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DH07 ◽  
Author(s):  
Momoko Deura ◽  
Yoshiyuki Kondo ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi ◽  
Yukihiro Shimogaki ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Annealing Effect ◽  
High Temperature Annealing ◽  
Group V ◽  
Organic Vapor ◽  
Metal Organic

High-temperature optically pumped lasing in ZnMgSSe/ZnSe heterostructures grown by metalorganic vapor phase epitaxy

1998 ◽  
Vol 73 (11) ◽  
pp. 1496-1498 ◽  
Author(s):  
A. L. Gurskii ◽  
I. P. Marko ◽  
E. V. Lutsenko ◽  
G. P. Yablonskii ◽  
H. Kalisch ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Optically Pumped

Iodine Doping in ZnSe in High-Temperature Range by Metalorganic Vapor-Phase Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 4A) ◽  
pp. L524-L527 ◽  
Author(s):  
Masahiro Fujimoto ◽  
Ikuo Suemune ◽  
Hirofumi Osaka ◽  
Yoshihisa Fujii
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Iodine Doping ◽  
High Temperature Range ◽  
Temperature Range

scholarly journals High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy

2009 ◽  
Vol 48 (1) ◽  
pp. 011102 ◽  
Author(s):  
Yasushi Takano ◽  
Kenta Morizumi ◽  
Satoshi Watanabe ◽  
Hiroyuki Masuda ◽  
Takuya Okamoto ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Si Substrates

Impact of High‐Temperature Annealing on Boron Containing AlN Layers Grown by Metal Organic Vapor Phase Epitaxy

2020 ◽  
Vol 217 (16) ◽  
pp. 2000251
Author(s):  
Oliver Rettig ◽  
Ferdinand Scholz ◽  
Yueliang Li ◽  
Johannes Biskupek ◽  
Ute Kaiser ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Temperature Annealing ◽  
Organic Vapor ◽  
Metal Organic

High Temperature Contacts to GaN and SiC Based on TiBx Nanostructure Layers

2005 ◽  
Vol 483-485 ◽  
pp. 1061-1064 ◽  
Author(s):  
Mykola S. Boltovets ◽  
V.N. Ivanov ◽  
A.Yu. Avksentyev ◽  
A.E. Belyaev ◽  
A.G. Borisenko ◽  
...  
Keyword(s):  
High Temperature ◽  
Magnetron Sputtering ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Layers ◽  
High Temperature Annealing ◽  
Donor Concentration

In this communication we present the results of study of new contact systems to GaN epitaxial layers grown on sapphire and n-type 6H-SiC monocrystals. The TiBx nanostructure phase has been used during manufacturing Ti – Al – TiBx – Au and TiBx contact systems. The n-GaN epitaxial layers of 1 µm thickness were grown on [0001] sapphire substrate by vapor-phase epitaxy. The n-type 6H-SiC monocrystals were grown by Lely method with the donor concentration of 2x1018 cm3. The layers of Ti, Al, TiBx and Au were deposited by magnetron sputtering followed by high-temperature annealing.

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