How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism

2007 ◽  
Vol 556-557 ◽  
pp. 187-190 ◽  
Author(s):  
Maher Soueidan ◽  
Olivier Kim-Hak ◽  
Gabriel Ferro ◽  
Patrick Chaudouët ◽  
Didier Chaussende ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Growth Temperature ◽  
General Rule ◽  
The Other ◽  
Heteroepitaxial Growth ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Mechanism ◽  
Si Content ◽  
Vapor Liquid

We report on the heteroepitaxial growth of 3C-SiC layers by Vapor-Liquid-Solid (VLS) mechanism on various α-SiC substrates, namely on- and off-axis for both 4H and 6H-SiC(0001), Si and C faces. The Si-Ge melts, which Si content was varied from 25 to 50 at%, were fed by 3 sccm of propane. The growth temperature was varied from 1200 to 1600°C. It was found that singledomain 3C-SiC layers can be obtained on 6H-SiC off and on-axis and 4H-SiC on-axis, while the other types of substrate gave twinned 3C-SiC material. As a general rule, one has to increase temperature when decreasing the Si content of the melt in order to avoid DPB formation. It was also found that twinned 3C-SiC layers form at low temperature while homoepitaxy is achieved at high temperature.

3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt

2011 ◽  
Vol 11 (6) ◽  
pp. 2177-2182 ◽  
Author(s):  
J. Lorenzzi ◽  
M. Lazar ◽  
D. Tournier ◽  
N. Jegenyes ◽  
D. Carole ◽  
...  
Keyword(s):  
Heteroepitaxial Growth ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Low-temperature homoepitaxial growth of α-SiC on on-axis (0001) substrate by vapor–liquid–solid mechanism

2006 ◽  
Vol 293 (2) ◽  
pp. 433-437 ◽  
Author(s):  
M. Soueidan ◽  
G. Ferro ◽  
B. Nsouli ◽  
F. Cauwet ◽  
L. Mollet ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Liquid Solid ◽  
Homoepitaxial Growth ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

In Situ Magnetic Field-Assisted Low Temperature Atmospheric Growth of GaN Nanowires via the Vapor–Liquid–Solid Mechanism

2013 ◽  
Vol 6 (1) ◽  
pp. 116-121 ◽  
Author(s):  
Jun Sik Kim ◽  
Bhaskar Chandra Mohanty ◽  
Chan Su Han ◽  
Seung Jun Han ◽  
Gwang Heon Ha ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Morphology-Controlled Synthesis of SiC Nanowires by Catalyst-Assisted Pyrolysis of Polymeric Precursor

2012 ◽  
Vol 465 ◽  
pp. 182-185 ◽  
Author(s):  
Wei Feng ◽  
Jing Tao Ma ◽  
De Sheng Ai ◽  
Wei You Yang ◽  
Xu Ping Lin
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Controlled Synthesis ◽  
Polymeric Precursor ◽  
Vapor Liquid Solid ◽  
Sic Nanowires ◽  
Different Types ◽  
Vapor Liquid

Two different types of morphology are observed in synthesis of SiC nanowires by catalyst-assisted pyrolysis of polymeric precursor while Au acts as the catalyst. Both two types of SiC nanowires are well oriented and uniform in diameter. The results indicate that longer (~20 μm) and slimmer (~100 nm) nanowires are tends to be produced in high temperature (1450°C), while shorter (~10 μm) and thicker (200~300 nm) ones are tends to be produced in low temperature (1420°C). Then we make a discussion on the mechanism of the growth of SiC nanowires based on the VLS (Vapor-Liquid-Solid) process.

SiC Homoepitaxial Growth at Low Temperature by Vapor−Liquid−Solid Mechanism in Al−Si Melt

2003 ◽  
Vol 3 (3) ◽  
pp. 285-287 ◽  
Author(s):  
Christophe Jacquier ◽  
Gabriel Ferro ◽  
François Cauwet ◽  
D. Chaussende ◽  
Yves Monteil
Keyword(s):  
Low Temperature ◽  
Vapor Liquid Solid ◽  
Homoepitaxial Growth ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

One-dimensional β–Ga2O3 nanostructures on sapphire (0001): Low-temperature epitaxial nanowires and high-temperature nanorod bundles

2005 ◽  
Vol 20 (12) ◽  
pp. 3397-3403 ◽  
Author(s):  
Ko-Wei Chang ◽  
Jih-Jen Wu
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Au Nanoparticles ◽  
Vapor Liquid Solid ◽  
One Dimensional ◽  
Single Precursor ◽  
Vs Mechanism ◽  
Orientational Relationship ◽  
Vapor Liquid

Well-aligned Ga2O3 nanowires were formed on the sapphire (0001) substrates at temperatures of 650–450 °C using a single precursor of gallium acetylacetonate via a vapor-liquid-solid (VLS) method. Structural analyses reveal that the well-aligned Ga2O3 nanowires are expitaxially grown on the sapphire (0001) with Ga2O3/ sapphire orientational relationship [201]||[0001] and [211]||[1120]. In addition, formation of the flowerlike Ga2O3 nanorod bundles at a temperature of 750 °C via the vapor-solid (VS) mechanism was also demonstrated. Instead of being catalysts in the VLS method, the Au nanoparticles are proposed to play a role in sinking the Ga vapor for forming the nuclei of Ga2O3 nanorods in the VS method.

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

SHAPE EVOLUTION IN ONE-DIMENSIONAL ZnO NANOSTRUCTURES GROWN FROM ZnO NANOPOWDER SOURCE: VAPOR–LIQUID–SOLID VERSUS VAPOR–SOLID GROWTH MECHANISMS

2011 ◽  
Vol 10 (01n02) ◽  
pp. 75-79 ◽  
Author(s):  
SOUMEN DHARA ◽  
P. K. GIRI
Keyword(s):  
Growth Mechanism ◽  
Growth Temperature ◽  
Shape Evolution ◽  
Zno Nanostructures ◽  
Growth Mechanisms ◽  
Vapor Liquid Solid ◽  
One Dimensional ◽  
Zno Nanopowder ◽  
Simultaneous Growth ◽  
Vapor Liquid

Here we report on the growth and evolution of ZnO nanowires grown from ZnO nanopowder as a source material using a horizontal muffle furnace. The shape evolution has been studied with variation in growth temperature and zinc vapor pressure. The structural analysis on these nanostructures shows c-axis oriented aligned growth. Scanning electron microscopy imaging of these nanostructures revealed the shape evolution from nanowires to nanoribbons and then to nanorods as the growth temperature increases from 650°C to 870°C. At 650°C, only vertical nanowires have been observed and with increase in growth temperature nanowires transform to nanoribbons and then to nanorods at 870°C. And we also observed simultaneous growth of nanorods and nanoribbons under a specific growth condition. We believe that these nanowires and nanorods were formed by vapor–liquid–solid growth mechanism (catalyst-mediated growth), whereas nanoribbons were grown by vapor–solid growth mechanism (without the aid of a metal catalyst). We observed simultaneous occurrence of vapor–liquid–solid and vapor–solid growth mechanisms at a particular growth temperature. These ZnO nanowires exhibit bound exciton related UV emission at ~379 nm, and defect-emission band in the visible region. Possible growth mechanism, shape evolution, and simultaneous growth of two types of one-dimensional ZnO nanostructures under the same growth condition are discussed.

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