Optimization of DLC/PS Antireflection Coating Properties for Multicrystalline Silicon Solar Cells

2009 ◽  
Vol 609 ◽  
pp. 179-182 ◽  
Author(s):  
Kahina Ait-Hamouda ◽  
A. Ababou ◽  
N. Gabouze

In this work, we report on the results of using a Diamond-Like Carbon / Porous Silicon (DLC/PS) double layer as antireflection coating to enhance the performance of multicrystalline silicon photovoltaic cells. DLC layers were obtained by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The properties of these layers were investigated in order to establish the optimum preparation conditions for solar cell applications. Then, thin films of combined porous silicon-DLC structure were fabricated for antireflection coating use. The spectral response of a solar cell based on multicrystalline silicon (mc-Si) coated with a PS layer, formed by electrochemical process was enhanced compared to a cell without porous silicon layer as emitter. Further improvements are obtained by a deposition of a thin DLC film. The results of the solar cell parameters before and after porous silicon formation and DLC coating are discussed.

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Hyukyong Kwon ◽  
Jaedoo Lee ◽  
Minjeong Kim ◽  
Soohong Lee

Solar cell is device that directly converts the energy of solar radiation to electrical energy. So it is important for solar cell to reduce the surface reflection of light in order to improve the efficiency of the device. Texturing and antireflection coating have been used to reduce the reflection of light. Texturing technology has reduced the 10% of incident light. However, there are a few disadvantages of random pyramid texturing that the results are not always reproducible in an industrial environment. And AR coating (MgF2, ZnS) is difficult to apply the standard industrial process because high vacuum is needed and the expense is very heavy. This paper investigates the formation of a thin film of porous silicon on the surface of crystalline silicon substrate without other AR coating layers. The formation of the porous silicon layer was measured with SEM (scanning electron microscopy). The formation of porous silicon layers on the textured silicon wafer resulted in lower than 5% of reflectance in the wavelength region from 400 to 1000 nm.


2007 ◽  
Vol 124-126 ◽  
pp. 987-990 ◽  
Author(s):  
Jeong Kim ◽  
Sang Wook Park ◽  
In Sik Moon ◽  
Moon Jae Lee ◽  
Dae Won Kim

An Electrochemical etching was used to form the porous silicon (PS) layer on the surface of the crystalline silicon wafer. The PS layer, in this study, will act as an antireflection coating to reduce the reflection of the incident light into the solar cell. The etching solution (electrolyte) was prepared by mixing HF (50%) and ethanol which was introduced for efficient bubble elimination on the silicon surface during etching process. The anodization of the silicon surface was performed under a constant current (galvanostat mode of the power supply), and process parameters, such as current density and etching time, were carefully tuned to minimize the surface reflectance of the heavily-doped wafer with sheet resistance between 20-30 / .


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