scholarly journals Investigation of Antireflective Porous Silicon Coating for Solar Cells

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Hyukyong Kwon ◽  
Jaedoo Lee ◽  
Minjeong Kim ◽  
Soohong Lee
Keyword(s):  
Solar Cell ◽  
Porous Silicon ◽  
Crystalline Silicon ◽  
Incident Light ◽  
High Vacuum ◽  
Wavelength Region ◽  
Silicon Layer ◽  
Antireflection Coating ◽  
Reflection Of Light ◽  
Ar Coating

Solar cell is device that directly converts the energy of solar radiation to electrical energy. So it is important for solar cell to reduce the surface reflection of light in order to improve the efficiency of the device. Texturing and antireflection coating have been used to reduce the reflection of light. Texturing technology has reduced the 10% of incident light. However, there are a few disadvantages of random pyramid texturing that the results are not always reproducible in an industrial environment. And AR coating (MgF2, ZnS) is difficult to apply the standard industrial process because high vacuum is needed and the expense is very heavy. This paper investigates the formation of a thin film of porous silicon on the surface of crystalline silicon substrate without other AR coating layers. The formation of the porous silicon layer was measured with SEM (scanning electron microscopy). The formation of porous silicon layers on the textured silicon wafer resulted in lower than 5% of reflectance in the wavelength region from 400 to 1000 nm.

Porous Silicon Layer by Electrochemical Etching for Silicon Solar Cell

2007 ◽  
Vol 124-126 ◽  
pp. 987-990 ◽  
Author(s):  
Jeong Kim ◽  
Sang Wook Park ◽  
In Sik Moon ◽  
Moon Jae Lee ◽  
Dae Won Kim
Keyword(s):  
Solar Cell ◽  
Porous Silicon ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Electrochemical Etching ◽  
Incident Light ◽  
Silicon Layer ◽  
Antireflection Coating ◽  
Constant Current ◽  
Etching Time

An Electrochemical etching was used to form the porous silicon (PS) layer on the surface of the crystalline silicon wafer. The PS layer, in this study, will act as an antireflection coating to reduce the reflection of the incident light into the solar cell. The etching solution (electrolyte) was prepared by mixing HF (50%) and ethanol which was introduced for efficient bubble elimination on the silicon surface during etching process. The anodization of the silicon surface was performed under a constant current (galvanostat mode of the power supply), and process parameters, such as current density and etching time, were carefully tuned to minimize the surface reflectance of the heavily-doped wafer with sheet resistance between 20-30 / .

Optimization of DLC/PS Antireflection Coating Properties for Multicrystalline Silicon Solar Cells

2009 ◽  
Vol 609 ◽  
pp. 179-182 ◽  
Author(s):  
Kahina Ait-Hamouda ◽  
A. Ababou ◽  
N. Gabouze
Keyword(s):  
Solar Cell ◽  
Porous Silicon ◽  
Spectral Response ◽  
Silicon Layer ◽  
Chemical Vapor ◽  
Antireflection Coating ◽  
Porous Silicon Layer ◽  
Electrochemical Process ◽  
Multicrystalline Silicon ◽  
Cell Parameters

In this work, we report on the results of using a Diamond-Like Carbon / Porous Silicon (DLC/PS) double layer as antireflection coating to enhance the performance of multicrystalline silicon photovoltaic cells. DLC layers were obtained by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The properties of these layers were investigated in order to establish the optimum preparation conditions for solar cell applications. Then, thin films of combined porous silicon-DLC structure were fabricated for antireflection coating use. The spectral response of a solar cell based on multicrystalline silicon (mc-Si) coated with a PS layer, formed by electrochemical process was enhanced compared to a cell without porous silicon layer as emitter. Further improvements are obtained by a deposition of a thin DLC film. The results of the solar cell parameters before and after porous silicon formation and DLC coating are discussed.

scholarly journals Optimization of Shape, Size and Material of Plasmonic Nano Particles in Thin Film Solar Cell

2020 ◽  
Vol 7 (11) ◽  
pp. 390-393
Author(s):  
Asad ullah ◽  
◽  
Fazal E Hilal ◽  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Active Layer ◽  
Thin Film Solar Cell ◽  
Metallic Nanoparticles ◽  
Incident Light ◽  
Silicon Layer ◽  
Antireflection Coating ◽  
Nano Particles ◽  
Absorption Of Light

In this study we present optimized shape, size and material of plasmonic nanoparticles in thin film solar cell. For this purpose, we chose silicon active layer solar cell, on the top of active layer another layer of silicon dioxide was used as antireflection coating. Thickness of ARC layer was kept 71nm. On the top of ARC layer metallic nanoparticles were placed. Parameters of NP’s such as shape, size and material were varied. Respective variations in the absorption of light in the active silicon layer were observed respectively. Absorption patterns were plotted against wavelength range of 400nm to 1400nm of incident light radiation using Finite Element Method (FEM). Results revealed the most optimized size and shape of nanoparticles that can contribute to the absorption of light in the active layer of the solar cell. Results also distinguished the best material for nanoparticle.

scholarly journals Optical Properties of Spin-Coated TiO2Antireflection Films on Textured Single-Crystalline Silicon Substrates

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Ryosuke Watanabe ◽  
Yohei Eguchi ◽  
Takuya Yamada ◽  
Yoji Saito
Keyword(s):  
Optical Properties ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Incident Light ◽  
Antireflection Coating ◽  
Silicon Wafers ◽  
Reflectance Spectra ◽  
Visible Range ◽  
Single Crystalline Silicon ◽  
Single Crystalline

Antireflection coating (ARC) prepared by a wet process is beneficial for low cost fabrication of photovoltaic cells. In this study, we investigated optical properties and morphologies of spin-coated TiO2ARCs on alkaline textured single-crystalline silicon wafers. Reflectance spectra of the spin-coated ARCs on alkaline textured silicon wafers exhibit no interferences and low reflectance values in the entire visible range. We modeled the structures of the spin-coated films for ray tracing numerical calculation and compared numerically calculated reflectance spectra with the experimental results. This is the first report to clarify the novel optical properties experimentally and theoretically. Optical properties of the spin-coated ARCs without interference are due to the fractional nonuniformity of the thickness of the spin-coated ARCs that cancels out the interference of the incident light.

scholarly journals Analytical Study of the Electrical Output Characteristics of c-Si Solar Cells by Cut and Shading Phenomena

Energies ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 3397 ◽  
Author(s):  
Jong Lim ◽  
Woo Shin ◽  
Hyemi Hwang ◽  
Young-Chul Ju ◽  
Suk Ko ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Incident Light ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Si Solar Cell ◽  
Si Solar Cells ◽  
Electrical Output

Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.

Improved Blue Response of Amorphous Silicon Alloy Solar Cells

1990 ◽  
Vol 192 ◽  
Author(s):  
A. Banerjee ◽  
S. Guha
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Double Layer ◽  
Single Layer ◽  
Antireflection Coating ◽  
Silicon Alloy ◽  
Total Current Density ◽  
The Individual ◽  
Hydrogenated Amorphous ◽  
Ar Coating

ABSTRACTA two-layer MgF2/ITO antireflection (AR) coating has been used to reduce the reflection losses from the surface of a hydrogenated amorphous silicon alloy solar cell. This has resulted in a higher efficiency device primarily due to an improved blue response. The relative thicknesses of the MgF2 and ITO layers have been tailored to give the highest overall quantum efficiency (Q) values, which are higher than that obtained with a single-layer antireflection coating. Typically, the 0 value at 400 nm (Q400) has been increased from 0.58 to 0.68 for a single a:SiH cell. Incorporation of the double-layer AR coating in conjunction with μc-SiC p-layer has yielded Q400 value of 0.77. The total current density obtained by adding the individual contribution of the component cells of a dual bandgap triple amorphous silicon alloy solar cell has been increased from 21.90 to 23.27 mA/cm2 using the double-layer AR coating.

Effects of Electrochemical Etching Time on the Performance of Porous Silicon Solar Cells on Crystalline n-Type (100) and (111)

2017 ◽  
Vol 46 ◽  
pp. 45-56 ◽  
Author(s):  
Khalid Omar ◽  
Khaldun A. Salman
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Crystalline Silicon ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Silicon Solar Cells ◽  
Etching Time ◽  
Crystalline Silicon Solar Cells ◽  
Coating Layers

Electrochemical etching was carried out to produce porous silicon based on crystalline silicon n-type (100) and (111) wafers. Etching times of 10, 20, and 30 min were applied. Porous silicon layer was used as anti-reflection coating on crystalline silicon solar cells. The optimal etching time is 20 min for preparing porous silicon layers based on crystalline silicon n-type (100) and (111) wafers. Nanopores with high porosity were produced on the porous silicon layer based on crystalline silicon n-type (100) and (111) wafers with average diameters of 5.7 and 5.8 nm, respectively. Average crystallite sizes for the porous silicon layer based on crystalline silicon n-type (100) and (111) wafers were 20.57 and 17.45 nm at 20 and 30 min, respectively, due to the increase in broadening of the full width at half maximum. Photoluminescence peaks for porous silicon layers based on crystalline silicon n-type (100) and (111) wafers increased with growing porosity and a great blue shift in luminescence. The minimum effective coefficient of reflection was obtained from porous silicon layers based on the crystalline silicon n-type (100) wafer compared with n-type (111) wafer and as-grown at different etching times. Porous silicon layers based on the crystalline silicon n-type (100) wafer at 20 min etching time exhibited excellent light trapping at wavelengths ranging from 400 to 1000 nm. Thus, fabricated crystalline silicon solar cells based on porous silicon (100) anti-reflection coating layers achieved the highest efficiency at 15.50% compared to porous silicon (111) anti-reflection coating layers. The efficiency is characterized applying I-V characterization system under 100 mW/cm2 illumination conditions.

scholarly journals CONTROL OVER THE PERFORMANCE OF MONOCRYSTALLINE SILICON SOLAR CELLS REFERRING TO THE POROUS SILICON LAYER / MONOKRISTALINIO SILICIO SAULĖS ELEMENTŲ CHARAKTERISTIKŲ VALDYMAS AKYTOJO SILICIO SLUOKSNIU

2012 ◽  
Vol 3 (6) ◽  
pp. 91-94
Author(s):  
Ramūnas Mitkevičius ◽  
Viktor Zagadskij ◽  
Eugenijus Šatkovskis
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Output Power ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Silicon Solar Cells ◽  
Crystalline Silicon Solar Cells ◽  
Maximal Output Power ◽  
Maximal Output

The paper examines the parameters of crystalline silicon solar cells such as fill factor, maximal output power and series resistance forming a porous silicon layer. The obtained results show that introducing the layer into the structure of a solar cell results in a 19 percent enhancement of maximal output power and conversion efficiency. Santrauka Šiame darbe tiriamas akytojo silicio darinių poveikis saulės elementų elektrinėms charakteristikoms: nuosekliajai varžai, voltamperinių charakteristikų formai. Parodyta, kad pagaminus silicio saulės elemente akytojo silicio sluoksnį, galima veikti (valdyti) saulės elementų voltamperines charakteristikas ir elemento nuosekliąją elektrinę varžą. Nustatyta, kad tiriamajame bandinyje suformavus akytojo silicio sluoksnį, apkrovos voltamperinės charakteristikos užpildos rodiklis padidėjo 1,15 karto, o maksimali elemento kuriama ir apkrovos metu atiduodama elektros energijos galia – 1,19 karto. Tiek pat 1,19 karto padidėjo saulės elemento šviesos konversijos į elektros energiją efektyvumas.

Study on Multi-Crystalline Silicon Textured by Ultrasound

2011 ◽  
Vol 130-134 ◽  
pp. 50-53
Author(s):  
Yan Chao ◽  
Li Qun Wu ◽  
Xiao Lu Luo
Keyword(s):  
Electron Microscope ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Incident Light ◽  
Surface Texturing ◽  
Distributed Morphology ◽  
Acid Etching ◽  
Si Solar Cell ◽  
Scanning Electron

Surface texturing of silicon can reduce the reflectance of incident light and increase the conversion efficiency of solar cells. Many approaches have been present in texturing silicon solar cell. In this paper, ultrasound is introduced into acid solution to texture the surface of multicrystalline silicon (mc-Si) solar cell. The morphology images are obtained by scanning electron microscope (SEM), more holes and regular distributed morphology for the presented method can be observed. Antireflectance of the mc-Si surface is measured by spectrophotometer, and the reflectance of 10.2% is obtained for the presented method, which is much less than that of acid etching.

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