Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate

2007 ◽  
Vol 556-557 ◽  
pp. 579-582 ◽  
Author(s):  
Etsushi Taguchi ◽  
Yu Suzuki ◽  
Masataka Satoh
Keyword(s):  
Electrical Properties ◽  
Electrical Activity ◽  
Sheet Resistance ◽  
Gas Flow ◽  
Annealing Temperature ◽  
Hall Effect Measurement ◽  
Inductive Heating ◽  
Ar Gas ◽  
P Type ◽  
Ion Implanted

The electrical properties of N ion implanted 3C-SiC(100) have been investigated by means of Hall effect measurement. The p-type epitaxial layer grown on n+ substrate is multiply implanted with N ions with energy ranging from 15 to 120 keV at a total dose of 2.4×1015 cm-2 at room temperature, which corresponds to the doping layer with a N concentration of 1×1020 cm-3 and a thickness of 250 nm. The implanted sample is annealed by RF inductive heating annealer at temperature ranging from 1000 to 1500 oC for 10 min in Ar gas flow. The sample annealed at 1000 oC shows the sheet resistance of 1 k./sq. The sheet resistance of the implanted sample is decreased with the increase of annealing temperature. The sample annealed at 1500 oC shows the sheet resistance of 81 ./sq. and the sheet carrier concentration of 1.6×1015 cm-2. The electrical activity of implanted N impurity is estimated to be 68 %, which is much larger than that of N ion implanted 4H-SiC (about 0.9 %). The higher electrical activity of implanted N impurity is attributed to the shallower donor level than that in 4H-SiC.

Investigation of Electrical Properties in Si Ion Implanted GaN Layer as A Function of Dose and Energy

2006 ◽  
Vol 955 ◽  
Author(s):  
Masataka Satoh ◽  
T Saitoh ◽  
K Nomoto ◽  
T Nakamura
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Gas Flow ◽  
Hall Effect Measurement ◽  
Ion Energy ◽  
Dose Ranging ◽  
Van Der Pauw ◽  
Induced Defects ◽  
Ion Implanted

ABSTRACTThe sheet resistance and sheet carrier concentration for Si ion implanted GaN have been investigated as a function of Si ion dosages and ion's energy using van der Pauw method and Hall effect measurement. Si ion implanted GaN is annealed at 1200 °C for 10 sec in N2 gas flow with 50 nm-thick SiNx cap layer to avoid dissociation of GaN. For Si ion energy of 30 keV, the sheet resistance is decreased from 103 to 56 ohm/sq. for the dose ranging from 1 × 1014 to 2 × 1015/cm2. For the Si dose larger than 2 × 1015/cm2, the sheet carrier concentration is saturated around 1 ×s 1015/cm2. Si ion implanted GaN with energy of 50, 80, and 120 keV at a dose of 2 × 1015/cm2 also reveal the sheet carrier concentration of about 1 × 1015/cm2 with the decrease of electron mobility. It is suggested that the implanted Si donors are strongly compensated by the residual implantation-induced defects.

Structural and Electrical Properties of Poly-3C-SiC Layer Obtained from P Ion Implanted 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 485-488 ◽  
Author(s):  
Masataka Satoh ◽  
Takeshi Jinushi ◽  
Tohru Nakamura
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Amorphous Layer ◽  
Doping Profile ◽  
Structural And Electrical Properties ◽  
Defective Region ◽  
Small Change ◽  
Ion Implanted

We investigate the structural and electrical properties of polycrystalline 3C-SiC obtained from P ion implanted 4H-SiC with the box-shaped doping profile (NP: 6 x 1020/cm3, thickness: 400 nm, ion dose: 1.6 x 1016/cm2, room temperature). RBS measurement reveals that the highly defective region is formed by P ion implantation, which remains even after annealing at 1700 oC. X-TEM observation shows the P ion induced amorphous layer is recrystallized to twinned-3C-SiC. After annealing at 1300 oC, a sheet resistance of 950 /sq. and sheet carrier concentration of 1 x 1015/cm2 was obtained. By increasing the annealing temperature from 1500 to 1700 oC, the sheet resistance was drastically decreased to about 200 /sq., while there was a small change in the sheet carrier concentration. For the sample annealed at 1700 oC, the electrical activity of the P impurity was estimated to be about 10 % which is comparable to the case of hot implanted sample.

Graphene Grown on Ion-Implanted 4H-SiC and an Effect of Pre-Plasma Treatment

2014 ◽  
Vol 1693 ◽  
Author(s):  
Toru Sugimachi ◽  
Yusuke Shiina ◽  
Daiki Aoyagi ◽  
Tomoaki Nishimura ◽  
Tohru Nakamura
Keyword(s):  
Surface Roughness ◽  
Ion Implantation ◽  
Plasma Treatment ◽  
Gas Flow ◽  
Graphene Film ◽  
Small Surface ◽  
The One ◽  
Ar Gas ◽  
P Type ◽  
Ion Implanted

ABSTRACT4H-SiC substrates were annealed at 1500 °C for 30 min in 0.01 MPa Ar gas flow to make a graphene film. To clarify the effect of Al ion implantation and pre-plasma treatment, the graphene was fabricated on four different kinds of SiC substrates: without plasma treatment, with plasma treatment, Al ion-implanted without plasma treatment and Al ion-implanted with plasma treatment. The graphene films were analyzed by AFM and Raman spectroscopy. The Al ion implanted sample, which was then processed by CF4 plasma, showed small surface roughness of 3.49 nm (RMS), while the sample without CF4 plasma treatment showed large surface roughness of 8.41nm. Similar results were also observed for SiC samples without Al ion implantation. In Raman spectra, strong D-band, G-band and 2D-band signals were detected on both ion-implanted samples after annealing at 1500 °C, but weak D-band were observed on both samples without Al ion implantation. Raman mapping (2D-FWHM) showed that the graphene on ion-implanted SiC treated with CF4 plasma was more homogeneous than the one without CF4 plasma treatment. Hall measurements for SiC without Al ion implantation showed that graphene on SiC treated with CF4 plasma has higher mobility (389 cm2/Vs) than that without plasma treatment (136 cm2/Vs). Additionally, p-type graphene can be fabricated on Al ion-implanted SiC by CF4 plasma treatment.

Beam Annealing of Ion-Implanted Gaas and Inp

1980 ◽  
Vol 1 ◽  
Author(s):  
J. C. C. Fan ◽  
R. L. Chapman ◽  
J. P. Donnelly ◽  
G. W. Turner ◽  
C. O. Bozler
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Fermi Level ◽  
Laser Annealing ◽  
Electrical Activation ◽  
Fermi Level Pinning ◽  
P Type ◽  
Conversion Efficiencies ◽  
Ion Implanted

ABSTRACTA scanned cw Nd: YAG laser was used to anneal ion-implanted GaAs and InP wafers. Measurements show that electrical activation is greater for p-type than for n-type dopants in GaAs, while in InP, the opposite is observed. A simple Fermi-level pinning model is presented to explain not only the electrical properties we have measured, but also those observed by other workers. We have fabricated GaAs and InP solar cells with junctions formed by ion implantation followed by laser annealing. The GaAs cells have much better conversion efficiencies than the InP cells, and this difference can be explained in terms of the model.

Effect of Sulfur Precursors on Crystallographic, Optical, and Electrical Properties of Cu2SnS3 Nanoparticles

2021 ◽  
Author(s):  
Mohamed Samir Abdel-Latif ◽  
Abdallah Rezk ◽  
Ahmed Abdel-Moniem ◽  
Amr Hessein
Keyword(s):  
Electrical Properties ◽  
Crystallite Size ◽  
Solvothermal Method ◽  
Hall Effect Measurement ◽  
Sulfur Source ◽  
Optical And Electrical Properties ◽  
Secondary Phases ◽  
Bulk Carrier ◽  
Noticeable Effect ◽  
P Type

Abstract In this study, the synthesis of Cu2SnS3 (CTS) nanoparticles by solvothermal method using different sulfur precursors is reported. The influence of sulfur precursors on the structure, optical and electrical properties of prepared CTS material is investigated. The sulfur precursor sources have showed a noticeable effect on crystallite size, secondary phases, and resulted CTS nanoparticles structure. Among the four sulfur precursor sources used in this study, thiourea is the only sulfur source that produces CTS with a cubic structure and without the need for thermal treatment. Whereas after sulfurization at 580 ºC, all the four samples attained CTS nanoparticles with diverse properties. Changing the sulfur precursors have clear effects on crystallite size and optical bandgap prepared samples as they ranged from 11.21 to 21.23 nm and from 1.4 to 1.7 eV, respectively. Additionally, Hall effect measurement revealed that all CTS samples are p-type semiconductors with bulk carrier concentrations in 1018 order, which is suitable for various optoelectronic applications such as photovoltaics and photodetectors.

Study on Fabrication and Properties of Copper-Tin-Oxide Thin Films

2009 ◽  
Vol 79-82 ◽  
pp. 787-790
Author(s):  
Ti Ning ◽  
Feng Ji ◽  
Jin Ma ◽  
Zhen Guo Song ◽  
Xu An Pei ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Perovskite Structure ◽  
Annealing Temperature ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Thermal Probe ◽  
P Type

Copper-tin-oxide thin films have been prepared on quartz substrates by the magnetron sputtering method. The structural,optical and electrical properties were investigated. The prepared samples were amorphous, CuSnO3 single crystalline grains with perovskite structure were observed after annealing temperature was above 530°C. The optical and electrical properties had great dependence with reactive gas pressure and annealing temperature. Thermal probe reveals p type conductivity of some samples. Keywords: Magnetron sputtering, CuSnO3, Perovskite structure

Activation Mechanisms in Ion-Implanted GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
N. Morris ◽  
B. J. Sealy
Keyword(s):  
Electrical Properties ◽  
Electrical Activity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Time ◽  
Electrical Activation ◽  
Annealing Stage ◽  
Activation Mechanisms ◽  
Ion Implanted

ABSTRACTRapid thermal annealing has been used to study the electrical activation mechanisms for magnesium and selenium implants in GaAs. By analysing the changes in electrical activity as a function of annealing time and temperature, a model has been developed which accurately predicts the electrical properties following the post-implant annealing stage. The model has been used to study the activation of other ions, particularly zinc, beryllium, tin and sulphur, the results of which will be compared with those of magnesium and selenium. The results suggest that the mechanism for electrical activation is dominated by the diffusion of gallium, arsenic or vacancies. The paper will present the model and discuss the activation mechanisms of the ions.

scholarly journals Isochronal Studies of the Structural and Electrical Properties of CdTe Films

2011 ◽  
Vol 8 (1) ◽  
pp. 134-140
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Structural And Electrical Properties ◽  
Evaporation Technique ◽  
Cdte Thin Films ◽  
P Type

The paper reports the influence of annealing temperature under vacuum for one hour on the some structural and electrical properties of p-type CdTe thin films were grown at room temperature under high vacuum by using thermal evaporation technique with a mean thickness about 600nm. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all annealing temperature. From investigated the electrical properties of CdTe thin films, the electrical conductivity, the majority carrier concentration, and the Hall mobility were found increase with increasing annealing temperatures.

Electrical Properties of (Zn, Mn) Containing Multilayer Metallizations to p-Type InGaAs/InP

1995 ◽  
Vol 382 ◽  
Author(s):  
Patrick W. Leec ◽  
Geoffrey K. Reeves ◽  
Wei Zhou
Keyword(s):  
Electrical Properties ◽  
Contact Resistance ◽  
Layer Thickness ◽  
Annealing Temperature ◽  
Specific Contact Resistance ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
A Minor ◽  
P Type ◽  
Metal Layers

ABSTRACTThe specific contact resistance, pc, of Au/Zn/Au, Ni/Zn/Ni/Au, Pd/Zn/Pt/Au and Pd/Mln/Sb/Pd/Au contacts to p-In0.47Ga0.53As/ InP has been measured as a function of layer thickness of Zn or Mn. All of the as-deposited contacts were ohmic, with pc = 1−2 × 10−5 Ω cm2. Increasing thickness of the Zn layer above 200 Å in the Au/Zn/Au contacts resulted in a minor decrease in pc while producing no change in the Ni/Zn/Ni/Au metallization. For the as-deposited Pd/Mn/Pd/Au contacts, the value of pc was independent of thickness of the Mn layer but differences in pc emerged at annealing temperatures of ≥ 250°. The analysis of these structures by RBS has shown an extensive intermixing of the metal layers at an annealing temperature of 450 °. In the Pd/Zn/Pt/Au contacts, the value of pc was reduced to a minimum value of 8 × 10−6 Ω cm2 by annealing at a temperature of 500 °. An examination of the Pd/Zn/Pt/Au configuration by RBS has shown that the Pt layer acted as a barrier for the indiffusion of the Au.

Effects of Post-Annealing Temperature on the Structure and Electrical Properties of N-Doped ZnO Films

2014 ◽  
Vol 1070-1072 ◽  
pp. 475-478
Author(s):  
Xiang Min Zhao
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Atomic Force ◽  
Post Annealing ◽  
Optimal Annealing Temperature ◽  
Structure Morphology ◽  
Doped Zno ◽  
P Type

N-doped ZnO films were deposited on Si (100) substrates by radio frequency (RF) magnetron sputtering in N2/Ar2 gas mixture. After the deposition, the films were post-annealed in vacuum at several temperatures from 400°C to 850°C for 60 minutes respectively.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO films following post-annealing. When the annealing temperature is higher than 650°C achieved by the n-type ZnO to the p-type transition and for the better growth of p-type ZnO films, the optimal annealing temperature is 650°C.

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