The Effect of the Synthesis Temperature on the Phase Composition and Electrophysical Properties of Superconducting Ceramics of the Composition Pb0.3Bi1.8Sr1.9Ca2Cu3Ow

1991 ◽  
Vol 62-64 ◽  
pp. 23-24
Author(s):  
V.S. Kravchenko ◽  
O.G. Potapova ◽  
A.I. Romanenko ◽  
O.V. Razlevinskaya
Keyword(s):  
Phase Composition ◽  
Synthesis Temperature ◽  
Electrophysical Properties ◽  
Superconducting Ceramics

Heat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaN

2009 ◽  
Vol 615-617 ◽  
pp. 565-568 ◽  
Author(s):  
Alexander A. Lebedev ◽  
A.E. Belyaev ◽  
N.S. Boltovets ◽  
V.N. Ivanov ◽  
Raisa V. Konakova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Phase Composition ◽  
Heat Resistance ◽  
Contact Structure ◽  
Schottky Barriers ◽  
Electrophysical Properties ◽  
Depth Profiles ◽  
Contact Metallization ◽  
Before And After ◽  
Concentration Depth Profiles

We studied the heat resistance of AuTiBx (ZrBx) barrier contacts to n-SiC 6H and n-GaN. The Schottky barrier diode (SBD) parameters, the concentration depth profiles for contact structure components and the phase composition of contact metallization were measured both before and after rapid thermal annealing (RTA) at temperatures up to 900 °С (1000 °С) for contacts to GaN (SiC 6H). It is shown that the layered structure of metallization and electrophysical properties of Schottky barriers (SBs) remain stable after RTA, thus indicating their heat resistance. The ideality factor n of the I-V characteristic of SBDs after RTA was 1.2, while the SB height φВ was ~0.9 eV (~0.8 eV) for the gallium nitride (silicon carbide) barrier structures.

The Effect of Synthesis Temperature on the Microstructure and Electrophysical Properties of BST 80/20 Films

2019 ◽  
Vol 61 (10) ◽  
pp. 1910-1914 ◽  
Author(s):  
M. S. Afanasiev ◽  
D. A. Kiselev ◽  
S. A. Levashov ◽  
A. A. Sivov ◽  
G. V. Chucheva
Keyword(s):  
Synthesis Temperature ◽  
Electrophysical Properties

scholarly journals Влияние температуры синтеза на микроструктуру и электрофизические свойства пленок BST 80/20

2019 ◽  
Vol 61 (10) ◽  
pp. 1948
Author(s):  
М.С. Афанасьев ◽  
Д.А. Киселев ◽  
С.А. Левашов ◽  
А.А. Сивов ◽  
Г.В. Чучева
Keyword(s):  
Synthesis Temperature ◽  
Silicon Substrates ◽  
Electrophysical Properties ◽  
Ferroelectric Films

The paper shows the effect of synthesis temperature on the microstructure and electrophysical properties of ferroelectric films of composition Ba0.8Sr0.2TiO3 when formed on silicon substrates with a platinum sublayer. On the basis of electrophysical and topographical measurements, a conclusion is made about the effect of the temperature of synthesis of ferroelectric films on their properties.

scholarly journals Создание и исследования структур металл-диэлектрик--полупроводник на основе сегнетоэлектрических пленок

2020 ◽  
Vol 62 (3) ◽  
pp. 422
Author(s):  
M.C. Афанасьев ◽  
Д.А. Киселев ◽  
C.A. Левашов ◽  
A.A. Сивов ◽  
Г.В. Чучева
Keyword(s):  
Piezoelectric Properties ◽  
Temperature Stability ◽  
Synthesis Temperature ◽  
Silicon Substrates ◽  
Electrophysical Properties ◽  
Ferroelectric Films ◽  
Semiconductor Structures ◽  
Capacitance Voltage ◽  
P Type ◽  
Dielectric And Piezoelectric Properties

Abstract The effect of the synthesis temperature on the microstructure and the electrophysical properties of metal–dielectric–semiconductor structures based on ferroelectric films of the composition Ba_0.8Sr_0.2TiO_3 upon the formation of p -type silicon substrates with [100] orientation is studied. It was experimentally established that an increase in the synthesis temperature leads to an improvement in the dielectric and piezoelectric properties of ferroelectric films. The temperature stability and stability in the behavior of the capacitance–voltage characteristics of MIS structures on the number of switching cycles are shown.

Synthesis of Ultra-Fine Zirconium Diboride Powders by Polymer Template Method Following by Microwave Sintering

2016 ◽  
Vol 697 ◽  
pp. 49-53
Author(s):  
Qi Huang Deng ◽  
Zhi Hui Ding ◽  
Xiang Feng Shen ◽  
Shi Yu Du ◽  
Qing Huang
Keyword(s):  
Phase Composition ◽  
Optimum Parameter ◽  
Microwave Sintering ◽  
Zirconium Diboride ◽  
Synthesis Temperature ◽  
Molar Ratio ◽  
Template Method ◽  
Particle Sizes ◽  
Polymer Template ◽  
Sintering Method

Zirconium diboride (ZrB2) nanoparticles were synthesized by polymer template method using zirconyl (ZrOCl2∙8H2O), boric acid (H3BO3), Chitosan and Mannitol (C6H14O6) with microwave sintering method. SEM and other analytic methods were used to study the phase composition and the microstructure of the nanoparticles.The influence of the ratio of zirconium to boron and carbon on the purity of ZrB2 powders, as well as the synthesis temperature and the holding time were studied. Pure ZrB2 at the molar ratio of C/Zr/B=10/5.2/1 can be obtained. The optimum parameter for microwave sintering is 1320 °C for 1h, which is about 300°C lower than conventional carbonization reduction to obtain ZrB2 powders. The synthesized powders have small particle sizes (50nm) with nearly spherical morphology.

Preparation of Bi2Sr2ZnCu2Ox superconducting ceramics and investigation of their electrophysical properties

2009 ◽  
Vol 35 (11) ◽  
pp. 843-845 ◽  
Author(s):  
V. M. Aliev ◽  
S. A. Aliev ◽  
S. S. Ragimov ◽  
G. J. Sultanov ◽  
A. N. Mamedova
Keyword(s):  
Electrophysical Properties ◽  
Superconducting Ceramics

scholarly journals Effect of the synthesis temperature on the phase composition of Al2O3

2021 ◽  
Vol 1942 (1) ◽  
pp. 012052
Author(s):  
Yu O Leonova ◽  
M A Sevostyanov ◽  
D O Mezentsev ◽  
D R Khayrutdinova ◽  
A S Lysenkov
Keyword(s):  
Phase Composition ◽  
Synthesis Temperature
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