Heat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaN
2009 ◽
Vol 615-617
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pp. 565-568
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Keyword(s):
We studied the heat resistance of AuTiBx (ZrBx) barrier contacts to n-SiC 6H and n-GaN. The Schottky barrier diode (SBD) parameters, the concentration depth profiles for contact structure components and the phase composition of contact metallization were measured both before and after rapid thermal annealing (RTA) at temperatures up to 900 °С (1000 °С) for contacts to GaN (SiC 6H). It is shown that the layered structure of metallization and electrophysical properties of Schottky barriers (SBs) remain stable after RTA, thus indicating their heat resistance. The ideality factor n of the I-V characteristic of SBDs after RTA was 1.2, while the SB height φВ was ~0.9 eV (~0.8 eV) for the gallium nitride (silicon carbide) barrier structures.
2019 ◽
Vol 963
◽
pp. 722-725
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2019 ◽
Vol 12
(03)
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pp. 1950032
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2015 ◽
Vol 651-653
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pp. 677-682
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2017 ◽
Vol 24
(24)
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pp. 20082-20092
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2004 ◽
Vol 83
(9)
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pp. 2282-2286
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