Studies on the Influence of In and Zn Doping on the CdSe Based Photo Electro Chemical (PEC) Solar Cells Using Electron Beam Evaporation Technique

CdSe thin films doped with 10% of Indium and 10 % Zinc were prepared by electron beam evaporation technique and the films were annealed at 200 oC for 30 min. Well crystalline films were deposited and the crystallite variation was studied for doping effect and it was found to be about 48 and 52 nm respectively. Optical band gap values are found to be modified by doping as well as annealing. PEC solar cells were fabricated using CdSe:In and CdSe:Zn films which showed 1.54% and 1.88% conversion efficiency respectively. Annealed films showed considerable influence in the optoelctronic properties and its improvement in conversion efficiency to about 2.75% and 2.87% respectively. In order to increase the photo output the films were annealed at 200o C at temperature. The photo output was Voc = 0.476 V, Jsc = 9.8 mA cm-2, ff = 0.44, η = 2.76 % at 80 mW cm-2. Photoetching increased the output parameters.

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OPTICAL PROPERTIES OF AsSeTl THIN FILMS DEPOSITED BY e-BEAM EVAPORATION TECHNIQUE

Surface Review and Letters ◽

10.1142/s0218625x11014394 ◽

2011 ◽

Vol 18 (01n02) ◽

pp. 71-75 ◽

Cited By ~ 2

Author(s):

M. M. ABD EL-RAHEEM

Keyword(s):

Thin Films ◽

Optical Properties ◽

Electron Beam ◽

Band Gap ◽

Optical Band Gap ◽

Plasma Frequency ◽

Electron Beam Evaporation ◽

Dispersion Energy ◽

Electron Beam Evaporation Technique ◽

Evaporation Technique

Five compositions of the system As 25 Se 75-x Tl x (x = 12, 16, 20, 24 and 28%) have been prepared using melt quench technique. Thin films of the same thickness (200 nm) were deposited by electron beam evaporation technique. Optical and other parameters of the films have been studied. The optical band gap E op found to decrease by increasing the coordination number r and average number of bonds per atom N av and by decreasing the heat of atomization H s . Other parameters as an oscillator energy E o , dispersion energy E d and plasma frequency ω p found to be affected by changing thallium content.

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SiO2Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells

International Journal of Photoenergy ◽

10.1155/2014/670438 ◽

2014 ◽

Vol 2014 ◽

pp. 1-5 ◽

Cited By ~ 5

Author(s):

Minghua Li ◽

Hui Shen ◽

Lin Zhuang ◽

Daming Chen ◽

Xinghua Liang

Keyword(s):

Electron Beam ◽

Solar Cells ◽

Conversion Efficiency ◽

Single Layer ◽

Bottom Layer ◽

Energy Conversion Efficiency ◽

Electron Beam Evaporation ◽

Silicon Solar Cells ◽

Antireflection Coatings ◽

Efficiency Increase

In this work we prepared double-layer antireflection coatings (DARC) by using the SiO2/SiNx:H heterostructure design. SiO2thin films were deposited by electron-beam evaporation on the conventional solar cell with SiNx:H single-layer antireflection coatings (SARC), while to avoid the coverage of SiO2on the front side busbars, a steel mask was utilized as the shelter. The thickness of the SiNx:H as bottom layer was fixed at 80 nm, and the varied thicknesses of the SiO2as top layer were 105 nm and 122 nm. The results show that the SiO2/SiNx:H DARC have a much lower reflectance and higher external quantum efficiency (EQE) in short wavelengths compared with the SiNx:H SARC. A higher energy conversion efficiency of 17.80% was obtained for solar cells with SiO2(105 nm)/SiNx:H (80 nm) DARC, an absolute conversion efficiency increase of 0.32% compared with the conventional single SiNx:H-coated cells.

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