Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC
Keyword(s):
We report on a very low density of interface traps at the AlN/4H-SiC interface estimated from capacitance-voltage (CV) analysis of metal-insulator-semiconductor (MIS) capacitors. Single crystalline aluminum nitride (AlN) films are grown by metal organic chemical vapor deposition (MOCVD). Current-voltage (IV) analysis shows that the breakdown electric field across the AlN dielectric is 3 MV/cm. By depositing an additional SiO2 layer on top of the AlN layer it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC interface.
1993 ◽
Vol 32
(Part 1, No. 9B)
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pp. 4069-4073
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2013 ◽
Vol 740-742
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pp. 777-780
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Characterization of InAs‐GaSb type II superlattices grown by metal organic chemical vapor deposition
1995 ◽
Vol 18
(2)
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pp. 161-168
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