Electrical Characterization of Thick InGaN Films for Photovoltaic Applications

2014 ◽  
Vol 1635 ◽  
pp. 29-34
Author(s):  
Yoshitaka Nakano ◽  
Liwen Sang ◽  
Masatomo Sumiya
Keyword(s):  
Deep Level ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Shallow Donor ◽  
Organic Chemical ◽  
Photovoltaic Applications ◽  
Metal Organic ◽  
Electronic Defects ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe have electrically characterized a 300 nm-thick unintentionally-doped In0.09Ga0.91N film grown by metal-organic chemical vapor deposition on a GaN template, employing capacitance-voltage (C-V), thermal admittance spectroscopy (TAS), and steady-state photocapacitance spectroscopy (SSPC) techniques on Schottky barrier diodes. TAS measurements revealed a degenerating-like shallow-donor defect with a thermal activation energy of ∼7 meV, which most likely acts as a source of residual carriers with their concentration of ∼1017 cm-3 determined from C-V measurements. Additionally, SSPC measurements revealed two characteristic deep-level defects located at ∼2.07 and ∼3.05 eV below the conduction band, which were densely enhanced near the underlayer. These electronic defects are probably introduced by alloying InN with GaN.

Structural and Electrical Characterization of SrTiO3Thin Films Prepared by Metal Organic Chemical Vapor Deposition

1993 ◽  
Vol 32 (Part 1, No. 9B) ◽  
pp. 4069-4073 ◽  
Author(s):  
Hiromu Yamaguchi ◽  
Pierre-Yves Lesaicherre ◽  
Toshiyuki Sakuma ◽  
Yoichi Miyasaka ◽  
Akihiko Ishitani ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Potentialities of Nickel Oxide as Dielectric for GaN and SiC Devices

2013 ◽  
Vol 740-742 ◽  
pp. 777-780 ◽  
Author(s):  
Raffaella Lo Nigro ◽  
Giuseppe Greco ◽  
L. Swanson ◽  
G. Fisichella ◽  
Patrick Fiorenza ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Nickel Oxide ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Lower Dielectric Constant ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Nio Films

This paper reports on a structural and electrical analysis of nickel oxide (NiO) films grown both on AlGaN/GaN heterostructures and on 4H-SiC epilayers. The films were grown by metal organic chemical vapor deposition (MOCVD). The structural analysis showed epitaxially oriented films over the hexagonal substrates. The electrical characterization of simple devices onto AlGaN/GaN heterostructures enabled to demonstrate a dielectric constant of 11.7 and a reduction of the leakage current in insulated gate structures. On the other hand, epitaxial NiO films grown onto 4H-SiC epilayers exhibited the presence of an interfacial SiO2layer and twinned NiO grains, and a lower dielectric constant.

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 460-464
Author(s):  
Rabia Y. Khosa ◽  
J.T. Chen ◽  
K. Pálsson ◽  
Robin Karhu ◽  
Jawad Hassan ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Single Crystalline ◽  
Current Voltage ◽  
Metal Organic ◽  
Mis Capacitors ◽  
Organic Chemical Vapor Deposition

We report on a very low density of interface traps at the AlN/4H-SiC interface estimated from capacitance-voltage (CV) analysis of metal-insulator-semiconductor (MIS) capacitors. Single crystalline aluminum nitride (AlN) films are grown by metal organic chemical vapor deposition (MOCVD). Current-voltage (IV) analysis shows that the breakdown electric field across the AlN dielectric is 3 MV/cm. By depositing an additional SiO2 layer on top of the AlN layer it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC interface.

scholarly journals Structural and Electrical Characterization of Bi2Se3Nanostructures Grown by Metal–Organic Chemical Vapor Deposition

Nano Letters ◽  
2012 ◽  
Vol 12 (9) ◽  
pp. 4711-4714 ◽  
Author(s):  
L. D. Alegria ◽  
M. D. Schroer ◽  
A. Chatterjee ◽  
G. R. Poirier ◽  
M. Pretko ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Electron Irradiation Induced Trap In N-Type Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
Z-Q. Fang ◽  
J. W. Hemsky ◽  
D. C. Look ◽  
M. P. Mack ◽  
R. J. Molnar ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Electric Field Effects ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Organic Chemical Vapor Deposition

AbstractA 1-MeV-electron-irradiation (EI) induced trap at Ec-0.18 eV is found in n-type GaN by deep level transient spectroscopy (DLTS) measurements on Schottky barrier diodes, fabricated on both metal-organic-chemical-vapor-deposition and hydride-vapor-phase-epitaxy material grown on sapphire. The 300-K carrier concentrations of the two materials are 2.3 × 1016 cm−3 and 1.3 × 1017 cm−3, respectively. Up to an irradiation dose of 1 × 1015 cm−2, the electron concentrations and pre-existing traps in the GaN layers are not significantly affected, while the EI-induced trap is produced at a rate of at least 0.2 cm−1. The DLTS peaks in the two materials are shifted slightly, possibly due to electric-field effects. Comparison with theory suggests that the defect is most likely associated with the N vacancy or Ga interstitial.

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