Texture Analysis of Poly(vinyl Chloride) Foils

2005 ◽  
Vol 105 ◽  
pp. 439-446 ◽  
Author(s):  
Ladislav Kalvoda ◽  
Maja Dlouhá ◽  
Stanislav Vratislav ◽  
R. Lukáš ◽  
Marianne Gilbert

The crystallographic textures of the free-standing diamond films which were synthesized by the chemical vapor deposition (CVD) using a CH4/H2/Ar gas mixtures have been investigated. Texture components of the diamond films are analyzed with pole figures and orientation distribution function (ODF). The surface morphology of the diamond films grown at different substrate temperatures as well as different gas concentrations is observed with scanning electron microscopy.(SEM). The experimental results indicate that the intensity of {110} fibre texture becomes much higher with the increase of the substrate temperature. It is considered that the higher multiplicity of <110> crystallographic direction in diamond octahedron leads to the higher appearance possibility of {110} fibre texture and the final texture components of the diamond films depend upon the CVD deposition parameters.

2005 ◽  
Vol 105 ◽  
pp. 421-426
Author(s):  
Leng Chen ◽  
H.P. Feng ◽  
Fan Xiu Lu

The crystallographic textures of the free-standing diamond films which were synthesized by the chemical vapor deposition (CVD) using a CH4/H2/Ar gas mixtures have been investigated. Texture components of the diamond films are analyzed with pole figures and orientation distribution function (ODF). The surface morphology of the diamond films grown at different substrate temperatures as well as different gas concentrations is observed with scanning electron microscopy (SEM). The experimental results indicate that the intensity of {110} fibre texture becomes much higher with the increase of the substrate temperature. It is considered that the higher multiplicity of <110> crystallographic direction in diamond octahedron leads to the higher appearance possibility of {110} fibre texture and the final texture components of the diamond films depend upon the CVD deposition parameters.


1989 ◽  
Vol 162 ◽  
Author(s):  
Sacharia Albin ◽  
Linwood Watkins

ABSTRACTCurrent-voltage characteristics of type Ia synthetic diamond, type IIb natural diamond and free-standing diamond films were measured before and after hydrogenation. The diamond films were polycrystalline, deposited on sacrificial silicon substrates using a microwave chemical vapor deposition process. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the I-V characteristics of the samples. The concentration of electrically active hydrogen was determined from the I-V data. Hydrogen passivation of deep traps in diamond is clearly demonstrated.


2007 ◽  
Vol 10-12 ◽  
pp. 864-868 ◽  
Author(s):  
Wei Zuo ◽  
Bin Shen ◽  
Fang Hong Sun ◽  
Ming Chen

Three-dimensional finite element simulations were used to investigate the influences of various hot filaments and other deposition parameters on the temperature field of substrates which affect significantly the growth and quality of diamond films by hot filament chemical vapor deposition (HFCVD) and based on the simulation results, the optimum position for diamond deposition was found. In the experiment, six cemented tungsten carbide inserts were used as substrates and placed on the workbench in the CVD reactor to deposit diamond films. According to the temperature distribution on substrates measured by thermocouple fixed in CVD reactor, the simulations were validated and the optimum arrangement of substrates was established from the simulation results. In addition, the simulation model was altered to optimize the process parameters of HFCVD deposition, and an improved process of depositing diamond films with high quality was obtained in order to achieve the great surface morphology, which laid the foundation of developing a new method to arrange the substrates in the CVD reactor for depositing diamond films.


1990 ◽  
Vol 5 (4) ◽  
pp. 811-817 ◽  
Author(s):  
Xiang Xin Bi ◽  
P.C. Eklund ◽  
J.G. Zhang ◽  
A.M. Rao ◽  
T.A. Perry ◽  
...  

Results of room-temperature optical studies on ∼10 micron thick, free-standing diamond films are reported. The films were grown on Si(100) substrates by hot filament-assisted chemical vapor deposition (CVD) from a methane/hydrogen mixture. The as-grown, free surface of the films exhibited a surface roughness of scale σ ∼ 0.2 to 5 microns, depending on the methane/hydrogen mixture, which introduces significant optical scattering loss for frequencies greater than 0.5 eV. Specular reflection and transmission spectra in the range 0.01–10 eV were collected. Below the threshold for interband adsorption near ∼5 eV, the films studied behaved approximately as thin parallel plates of refractive index 2.4, with the rough free surface leading to increasingly larger loss of specular transmission/reflection with decreasing wavelength. Structure in the mid-infrared transmission spectra was observed and attributed to disorder-induced one-phonon absorption, intrinsic multi-phonon absorption, and infrared active –C–H2 stretching modes. The strength of the C–H band was observed to increase with increasing methane pressure in the growth chamber. At 5.3 eV, the onset of interband absorption was observed, in good agreement with the value of the indirect bandgap in type IIa (intrinsic) diamond.


Texture ◽  
1972 ◽  
Vol 1 (1) ◽  
pp. 31-49 ◽  
Author(s):  
U. Schläfer ◽  
H. J. Bunge

Three-dimensional orientation distribution functions were calculated from neutron diffraction pole figures of unwound cylinders taken at different distances from the centre of cold drawn Al-wires. Their features change from the axially symmetric type at the very centre of the wire towards a texture near to the rolling type at the surface. Relations between the three-dimensional function and ordinary fibre texture pole figures were used to study the dependence of the textures on certain processing variables for cold drawn as well as recrystallized wires.


2005 ◽  
Vol 495-497 ◽  
pp. 1359-1364 ◽  
Author(s):  
Leng Chen ◽  
Wei Min Mao ◽  
Fan Xiu Lu ◽  
Ping Yang

The residual stress and crystallographic texture of diamond films were investigated in the present work. The diamond films were synthesized on (100) silicon wafer by Microwave Plasma Chemical Vapor deposition (MPCVD). Then the residual stresses of the films were measured by X-ray diffractometer equipped with the two-dimensional detector. The residual stresses can be classified into two categories, i.e., the intrinsic stresses and the thermal stresses. It was shown that the thermal stresses were compressive in the temperature range studied and the intrinsic stresses were tensile. The crystallographic textures of the films were measured by X-ray diffractometer with the method of pole figure and orientation distribution function (ODF). The experimental results suggest that the crystallographic textures of the films depend upon the deposition temperature and methane flow rates, and the components and intensity of crystallographic textures have effect on the residual stresses in diamond films to a certain extent.


1990 ◽  
Vol 5 (11) ◽  
pp. 2345-2350 ◽  
Author(s):  
X. H. Wang ◽  
L. Pilione ◽  
W. Zhu ◽  
W. Yarbrough ◽  
W. Drawl ◽  
...  

Diamond films of 15–20 μm thicknesses were prepared by microwave plasma enhanced chemical vapor deposition onto crystalline silicon substrates. The growth surfaces of the films were rough with polycrystalline crystallographic habits, while the substrate sides of these films were smooth and featureless as viewed by optical microscopy. A heated cast iron scaife was used to polish the rough growth surfaces, and free-standing films were removed from the silicon substrates by dissolving the silicon in an aqueous HF. Both infrared optical transmission and reflection spectra were measured over the range of 600–4000 cm−1. For polished films, near 70% transmittance was obtained over the whole range, while the transmittance for nonpolished films was much lower and varied strongly with the wave number. Absorptions due to carbon-hydrogen stretching bands as well as a silicon carbide phase were observed in the transmission spectra. The optical absorption coefficient and the refractive index were found to vary from as high as 150 to as low as 7 cm−1 and 2.41 to 2.49, respectively (depending on the film quality and the wave number). A weak signature of the two-phonon absorption band of diamond was observed. The relationship between deposition conditions and infrared optical properties of diamond films before as well as after polishing is discussed.


1990 ◽  
Vol 34 ◽  
pp. 543-555
Author(s):  
Richard F. Hamilton ◽  
Diwakar Garg ◽  
Keith A. Wood ◽  
David S. Hoover

AbstractSynthesizing thin diamond films by chemical vapor deposition (CVD) is the most recent and technologically important development in the thin-film field. Thin diamond films are useful in many applications because of their unique physical, chemical, optical, and electronic properties.To assess thin diamond films’ suitability for support membranes in X-ray lithography, X-ray diffraction was used to characterize the crystal structure and orientation of these films deposited on silicon wafers by hot-filament assisted CVD. X-ray transmission properties of free-standing thin diamond films prepared by selectively etching silicon substrates were characterized by X-ray fluorescence in short and long wavelength regions.This paper discusses conventional and grazing incidence diffraction techniques used to study the crystal structure of thin diamond films and compares the results with film morphology. It also describes X-ray transmission properties of these films in terms of Beer's Law, the mass absorption coefficient, and the wavelength of attenuated radiation. Finally, it reveals the long wavelength regions for optimum X-ray lithography operations using polycrystalline diamond (PCD) film.


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