Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes
2009 ◽
Vol 156-158
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pp. 331-336
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Keyword(s):
The electrical current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/3C-SiC Schottky diodes were studied as a function of contact area. The results were correlated to defects in the 3C-SiC, which were studied and quantified by conductive atomic force microscopy (C-AFM). A method based on C-AFM was introduced that enables current-voltage characterization of diodes of contact radius down to 5 µm, which consequently allows the extraction of diode parameters for Schottky diodes of very small contact area.
2015 ◽
Vol 1109
◽
pp. 238-242
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2011 ◽
Vol 95
(7)
◽
pp. 1949-1954
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2012 ◽
Vol 21
(7)
◽
pp. 1433-1443
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2010 ◽
Vol 30
(7)
◽
pp. 1761-1764
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Electrical Characterization of Bismuth Sulfide Nanowire Arrays by Conductive Atomic Force Microscopy
2008 ◽
Vol 112
(49)
◽
pp. 19680-19685
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2006 ◽
Vol 243
(1)
◽
pp. 16-19
◽
2006 ◽
Vol 527-529
◽
pp. 915-918
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