Microscopic Characterizations of Nanostructured Silicon Thin Films for Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
Antonín Fejfar ◽  
Petr Klapetek ◽  
Jakub Zlámal ◽  
Aliaksei Vetushka ◽  
Martin Ledinský ◽  
...  

ABSTRACTMicroscopic characterization of mixed phase silicon thin films by conductive atomic force microscopy (C-AFM) was used to study the structure composed of conical microcrystalline grains dispersed in amorphous matrix. C-AFM experiments were interpreted using simulations of electric field and current distributions. Density of absorbed optical power was calculated by numerically solving the Maxwell equations. The goal of this study is to combine both models in order to simulate local photoconductivity for understanding the charge photogeneration and collection in nanostructured solar cells.

2011 ◽  
Vol 5 (10-11) ◽  
pp. 373-375 ◽  
Author(s):  
Martin Ledinský ◽  
Antonín Fejfar ◽  
Aliaksei Vetushka ◽  
Jiří Stuchlík ◽  
Bohuslav Rezek ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6349
Author(s):  
Abel Garcia-Barrientos ◽  
Jose Luis Bernal-Ponce ◽  
Jairo Plaza-Castillo ◽  
Alberto Cuevas-Salgado ◽  
Ariosto Medina-Flores ◽  
...  

In this paper, the analysis, synthesis and characterization of thin films of a-Si:H deposited by PECVD were carried out. Three types of films were deposited: In the first series (00 process), an intrinsic a-Si:H film was doped. In the second series (A1–A5 process), n-type samples were doped, and to carry this out, a gas mixture of silane (SiH4), dihydrogen (H2) and phosphine (PH3) was used. In the third series (B1–B5 process), p-type samples were doped using a mixture of silane (SiH4), dihydrogen (H2) and diborane (B2H6). The films’ surface morphology was characterized by atomic force microscopy (AFM), while the analysis of the films was performed by scanning electron microscopy (SEM), and UV–visible ellipsometry was used to obtain the optical band gap and film thickness. According to the results of the present study, it can be concluded that the best conditions can be obtained when the flow of dopant gases (phosphine or diborane) increases, as seen in the conductivity graphs, where the films with the highest flow of dopant gas reached the highest conductivities compared to the minimum required for materials made of a-Si:H silicon for high-quality solar cells. It can be concluded from the results that the magnitude of the conductivity, which increased by several orders, represents an important result, since we could improve the efficiency of solar cells based on a-Si:H.


2002 ◽  
Vol 09 (05n06) ◽  
pp. 1617-1621
Author(s):  
C. CALDERÓN ◽  
H. INFANTE ◽  
G. GORDILLO

This work presents results concerning the development of n +- ZnO/i-ZnO and n +- ZnO/ZnSe bilayer structures with adequate properties to be used as optical windows in solar cells based on CuInSe 2 thin films. The optical and morphological properties of each of the layers constituting the bilayer structures were studied through spectral transmittance and atomic force microscopy (AFM) measurements. The studies revealed that windows of this type allow a significant increase of the spectral range of absorbed radiation by the solar cell in comparison with those using ZnO/CdS as optical window.


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