Current-Voltage Characterization of Gallium Arsenide Nanowires Using a Conductive Atomic Force Microscopy

2015 ◽  
Vol 1109 ◽  
pp. 238-242 ◽  
Author(s):  
R. Muhammad ◽  
Yussof Wahab ◽  
Zulkafli Othaman ◽  
Samsudi Sakrani
Keyword(s):  
Atomic Force Microscopy ◽  
Gallium Arsenide ◽  
Linear Part ◽  
Schottky Contact ◽  
Conductivity Measurement ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage

Utilizing semiconductor nanowires for optoelectronics device requires exact knowledge of their current-voltage properties. In this report, we examine accurate on-top imaging and I-V characterization of individual vertical Gallium Arsenide Nanowires (GaAs NWs) using conductive atomic force microscopy without additional microscopy tools, thus allowing versatile application. The measured current-voltage characteristic of a single NW shows the typical performance of a Schottky contact, which caused by the contact between the metallic AFM tip and the top of NWs. The height of the Schottky barrier is dependent on the diameter of the nanowires. The linear part of the curve was used to calculate the differential resistance, which was found to be about 25 to 100 MΩ. Energy band gap for GaAs NW was found to be 1.5 eV by differential conductivity measurement.

Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures

2016 ◽  
Vol 858 ◽  
pp. 1137-1140 ◽  
Author(s):  
Gabriele Fisichella ◽  
Giuseppe Greco ◽  
Salvatore di Franco ◽  
Raffaella Lo Nigro ◽  
Emanuela Schilirò ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Schottky Contact ◽  
Hot Electron ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Local Current ◽  
High Frequency Device ◽  
Electron Transistors

This paper presents a study of the vertical current transport in a graphene (Gr) heterostructure with AlxGa1-xN/GaN, which represent the main building block of a novel high frequency device, the hot electron transistor (HET) with Gr base. The morphological and electrical properties of this heterostructures have been investigated at nanoscale by atomic force microscopy (AFM) and conductive atomic force microscopy (CAFM). In particular, local current-voltage measurements by the CAFM probe revealed the formation of a Schottky contact with low barrier height (∼0.41 eV) and excellent lateral uniformity between Gr and AlGaN. Basing on the electrical parameters extracted from this characterization, the theoretical performances of a HET formed by a metal/Al2O3/Gr/AlGaN/GaN stack have been evaluated.

Characterization of antiphase domains on GaAs grown on Ge substrates by conductive atomic force microscopy for photovoltaic applications

2011 ◽  
Vol 95 (7) ◽  
pp. 1949-1954 ◽  
Author(s):  
B. Galiana ◽  
I. Rey-Stolle ◽  
I. Beinik ◽  
C. Algora ◽  
C. Teichert ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Photovoltaic Applications ◽  
Antiphase Domains

Electrical conductivity measurement of λ DNA molecules by conductive atomic force microscopy

2021 ◽  
Author(s):  
Ying Wang ◽  
Ying Xie ◽  
Mingyan Gao ◽  
Wenxiao Zhang ◽  
Lanjiao Liu ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Atomic Force Microscopy ◽  
Conductivity Measurement ◽  
Dna Molecules ◽  
Electrical Conductivity Measurement ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Influence of surface passivation on electric properties of individual GaAs nanowires studied by current–voltage AFM measurements

2016 ◽  
Vol 56 (2) ◽  
Author(s):  
Pavel Geydt ◽  
Prokhor A. Alekseev ◽  
Mikhail S. Dunaevskiy ◽  
Tuomas Haggrén ◽  
Joona-Pekko Kakko ◽  
...  
Keyword(s):  
Vertical Structure ◽  
Surface Passivation ◽  
Surface States ◽  
Electric Properties ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Nanowires ◽  
Current Voltage

Current–voltage (I–V) characteristics of vertical p-GaAs nanowires (NWs) covered by different surface passivation materials were experimentally measured by conductive atomic force microscopy (C-AFM). The obtained I–V curves for individual NWs with a diameter of 100 nm covered with AlGaAs, GaN, GaP or InP shell layers were compared to analyse the influence of surface passivation on the density of surface states and choose the most beneficial passivating material for technological applications. We have found the absence of a Schottky barrier between the golden catalytic cap on the top of a NW and the nanowire situated below and covered with an ultrathin GaP passivating layer. It was suggested that passivating material can arrange the heterostructure configuration with the GaAs NW near the Au cap. The latter mechanism was proposed to explain a strong energy barrier found in nanowires covered with InP passivation. AlGaAs passivation affected the forward threshold voltage of nanowires for NWs, which was measured simultaneously with the resistivity of each individual vertical structure from an array by means of AFM in the regime of measuring the I–V curves and onefold calculations. We made an attempt to develop the methodology of measurement and characterization of electric properties of passivated NWs.

Electrical characterization of ZnO multilayer varistors on the nanometre scale with conductive atomic force microscopy

2010 ◽  
Vol 30 (7) ◽  
pp. 1761-1764 ◽  
Author(s):  
Martin Schloffer ◽  
Christian Teichert ◽  
Peter Supancic ◽  
Andrei Andreev ◽  
Yue Hou ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Electrical Characterization of Bismuth Sulfide Nanowire Arrays by Conductive Atomic Force Microscopy

2008 ◽  
Vol 112 (49) ◽  
pp. 19680-19685 ◽  
Author(s):  
Pavels Birjukovs ◽  
Nikolay Petkov ◽  
Ju Xu ◽  
Janis Svirksts ◽  
John J. Boland ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Characterization ◽  
Nanowire Arrays ◽  
Bismuth Sulfide ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Electrical characterization of HgTe nanowires using conductive atomic force microscopy

2010 ◽  
Vol 108 (11) ◽  
pp. 114308 ◽  
Author(s):  
P. Gundersen ◽  
K. O. Kongshaug ◽  
E. Selvig ◽  
R. Haakenaasen
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force
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