Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements

2011 ◽  
Vol 178-179 ◽  
pp. 267-272 ◽  
Author(s):  
Ivan Starkov ◽  
Stanislav Tyaginov ◽  
Hubert Enichlmair ◽  
Jong Mun Park ◽  
Hajdin Ceric ◽  
...  

The interface state density profile for an unstressed transistor has been carefully extracted. The experimental evidence of profile non-uniformity is presented. A scheme to separate the bulk oxide trap contribution from the total charge pumping current is suggested as an improvement to the conventional extraction procedure. The obtained information is of high importance in the context of hot-carrier degradation modeling in order to allow for a more detailed verification of the model.

1998 ◽  
Vol 84 (4) ◽  
pp. 2341-2348 ◽  
Author(s):  
L. Mariucci ◽  
G. Fortunato ◽  
R. Carluccio ◽  
A. Pecora ◽  
S. Giovannini ◽  
...  

2014 ◽  
Vol 54 (4) ◽  
pp. 725-729 ◽  
Author(s):  
Chunmeng Dou ◽  
Tomoya Shoji ◽  
Kazuhiro Nakajima ◽  
Kuniyuki Kakushima ◽  
Parhat Ahmet ◽  
...  

2019 ◽  
Vol 41 (7) ◽  
pp. 293-298 ◽  
Author(s):  
Kazuhiro Nakajima ◽  
Soshi Sato ◽  
Kuniyuki Kakushima ◽  
Parhat Ahmet ◽  
Kazuo Tsutsui ◽  
...  

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