Improvement of hole injection efficiency for implementing thin p-type light-emitting diodes (Conference Presentation)

2018 ◽  
Author(s):  
Chia-Ying Su ◽  
Chun-Han Lin ◽  
Charng-Gan Tu ◽  
Yu-Feng Yao ◽  
Wei-Heng Liu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Hole Injection ◽  
Injection Efficiency ◽  
Light Emitting ◽  
P Type

Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

2019 ◽  
Vol 56 (6) ◽  
pp. 060001
Author(s):  
田康凯 Tian Kangkai ◽  
楚春双 Chu Chunshuang ◽  
毕文刚 Bi Wengang ◽  
张勇辉 Zhang Yonghui ◽  
张紫辉 Zhang Zihui
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Efficiency Improvement ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

P‐type Sb‐doped Cu 2 O Hole Injection Layer Integrated on Transparent ITO Electrode for Acidic PEDOT:PSS‐Free Quantum Dot Light Emitting Diodes

2019 ◽  
Vol 216 (11) ◽  
pp. 1900004 ◽  
Author(s):  
Hyeong‐Jin Seo ◽  
Ji‐Eun Lee ◽  
Su Been Heo ◽  
Minju Kim ◽  
Yeonjin Yi ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Ito Electrode ◽  
P Type

Output power enhancement of GaN light emitting diodes with p-type ZnO hole injection layer

2009 ◽  
Vol 94 (10) ◽  
pp. 103506 ◽  
Author(s):  
B. J. Kim ◽  
Y. R. Ryu ◽  
T. S. Lee ◽  
H. W. White
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Power Enhancement ◽  
P Type

Fabrication of InGaAs/GaAs Light-Emitting Diodes with GaMnSb Ferromagnetic Injector Layer

2012 ◽  
Vol 190 ◽  
pp. 89-92
Author(s):  
M.V. Dorokhin ◽  
Y.A. Danilov ◽  
Alexei V. Kudrin ◽  
E.I. Malysheva ◽  
M.M. Prokof’eva ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Potential Barrier ◽  
Light Emitting Diodes ◽  
Spin Injection ◽  
High Potential ◽  
Hole Injection ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Electroluminescence Intensity ◽  
High Potential Barrier

The electroluminescence properties of ferromagnetic GaMnSb/GaAs diodes have been investigated. It has been found that diodes properties are significantly dependent on GaMnSb layer electrical properties. The intensity of electroluminescence of the diode with semiconductor GaMnSb contact is relatively low, that is due to a high potential barrier at the interface. In case of metallic GaMnSb/GaAs contact high hole injection efficiency provides relatively high electroluminescence intensity. Investigated light-emitting diodes can be prospective for investigation of spin injection effects.

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