The Influence of High-Temperature Heat Treatment on the Microstructure of Mg-5Al-3Ca-0.7Sr-0.2Mn Magnesium Alloy

2013 ◽  
Vol 203-204 ◽  
pp. 246-249 ◽  
Author(s):  
Tomasz Rzychoń

The paper presents results of microstructural investigations of Mg-5Al-3Ca-0.7Sr-0.2Mn (ACJM53) magnesium alloys in the as-cast condition and after heat treatment at 450°C for 4.5 hours. Two kinds of transformation were observed in ACJM53 alloy after heat treatment: (Mg,Al)2Ca (C36) → Al2Ca (C15) and Al3Mg13(Sr,Ca) → Mg17(Sr,Ca)2 transformations without the change in morphology of output compounds. Morphology of Mg2Ca (C14) have been changed from fine lamellar to globular and precipitation process of Al2Ca (C15) phase inside the grains of solid solution was found.

Author(s):  
K.I. Nedashkovskiy ◽  
A.V. Gulshin ◽  
Yu.M. Averina ◽  
V.A. Naumkina ◽  
V.V. Menshikov ◽  
...  

The paper presents investigation results and a technology for manufacturing fastener workpieces out of the 07Kh16N6-Sh (07Х16Н6-Ш) steel using high-temperature heat treatment. The steel undergoing our testing was additionally doped with molybdenum, as reflected in the 07Kh16N6M-Sh (07Х16Н6М-Ш) designation, which facilitated grain refinement. We implemented accelerated climate testing of bolts in order to assess the corrosion cracking resistance of 07Kh16N6-Sh (07Х16Н6-Ш), 07Kh16N6M-Sh (07Х16Н6М-Ш) and 13Kh15N4AM3-Sh (13Х15Н4АМ3-Ш) steel fasteners in maritime climates.


Carbon ◽  
2009 ◽  
Vol 47 (1) ◽  
pp. 215-225 ◽  
Author(s):  
G.G. Kuvshinov ◽  
I.S. Chukanov ◽  
Y.L. Krutsky ◽  
V.V. Ochkov ◽  
V.I. Zaikovskii ◽  
...  

1984 ◽  
Vol 36 ◽  
Author(s):  
T. Kook ◽  
R. J. Jaccodine

ABSTRACTThe diffusion of various dopants( B, P, As, and Sb) in (111) silicon during high temperature( 1100°C ) heat treatment in nitrogen depends on the capping layers, i.e., SiO2, Si3 N4, and SiO2 + Si3 N4, layers. The junction motion of all dopants were retar ed in the bare silicon compared with that in the SiO2 + Si3 N4 capped silicon. The apparently retarded junction motion of As and sb diffused specimens in the bare silicon is due to the severe out-diffusion loss of dopant atoms and As and Sb diffusion are in fact enhanced during thermal nitridation of silicon in N2.


2003 ◽  
Vol 11 (2) ◽  
pp. 122-127 ◽  
Author(s):  
Yun-Soo Lim ◽  
Hee-Seok Kim ◽  
Myung-Soo Kim ◽  
Nam-Hee Cho ◽  
Sahn Nahm

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