Specification of Trace Metal Contamination for Image Sensors

2016 ◽  
Vol 255 ◽  
pp. 309-312 ◽  
Author(s):  
Paul W. Mertens ◽  
Simone Lavizzari ◽  
Stefano Guerrieri
Keyword(s):  
Trace Metal ◽  
Dark Current ◽  
Background Noise ◽  
Metal Contamination ◽  
Image Sensors ◽  
Trace Metal Contamination ◽  
Metal Impurities ◽  
Current Contribution ◽  
Cmos Image Sensors ◽  
Internal Generation

CMOS image sensors can suffer from background noise in absence of any light. In order to suppress this it is important to keep this noise, referred to as dark-current low. This implies that the internal generation current should be very low. Trace metal impurities have been reported to increase the generation current. In this study the trap-assisted generation current contributions due to 7 different metal impurities have been calculated. It was concluded that Cu and Mn impurities yield the highest generation current contribution.

Method of Detecting Trace Metal Contamination in Thick-Film SOI Device

2005 ◽  
Author(s):  
Yasunori Goto ◽  
Hiroomi Eguchi ◽  
Masaru Iida
Keyword(s):  
Trace Metal ◽  
Thick Film ◽  
Metal Contamination ◽  
Semiconductor Device ◽  
Trace Element Analysis ◽  
Silicon On Insulator ◽  
Element Analysis ◽  
Trace Metal Contamination ◽  
Trace Metal Elements ◽  
Output Characteristics

Abstract In the automotive IC using thick-film silicon on insulator (SOI) semiconductor device, if the gettering capability of a SOI wafer is inadequate, electrical characteristics degradation by metal contamination arises and the yield falls. At this time, an automotive IC was made experimentally for evaluation of the gettering capability as one of the purposes. In this IC, one of the output characteristics varied from the standard, therefore failure analysis was performed, which found trace metal elements as one of the causes. By making full use of 3D perspective, it is possible to fabricate a site-specific sample into 0.1 micrometre in thickness without missing a failure point that has very minute quantities of contaminant in a semiconductor device. Using energy dispersive X-ray, it is possible to detect trace metal contamination at levels 1E12 atoms per sq cm. that are conventionally detected only by trace element analysis.

Assessment of trace metal contamination and bioavailability in an Environmental Protection Area: Guaxindiba estuarine system (Guanabara Bay, Rio de Janeiro Brazil)

2020 ◽  
Vol 35 ◽  
pp. 101143
Author(s):  
Michele Fernandes ◽  
Estefan Monteiro da Fonseca ◽  
Leonardo da Silva Lima ◽  
Susanna Eleonora Sichel ◽  
Jessica de Freitas Delgado ◽  
...  
Keyword(s):  
Trace Metal ◽  
Environmental Protection ◽  
Metal Contamination ◽  
Rio De Janeiro ◽  
Estuarine System ◽  
Guanabara Bay ◽  
Trace Metal Contamination ◽  
Environmental Protection Area ◽  
Protection Area

Reconstructing Early Industrial Contributions to Legacy Trace Metal Contamination in Southwestern Pennsylvania

2017 ◽  
Vol 51 (8) ◽  
pp. 4173-4181 ◽  
Author(s):  
Robert J. Rossi ◽  
Daniel J. Bain ◽  
Aubrey L. Hillman ◽  
David P. Pompeani ◽  
Matthew S. Finkenbinder ◽  
...  
Keyword(s):  
Trace Metal ◽  
Metal Contamination ◽  
Trace Metal Contamination ◽  
Southwestern Pennsylvania

scholarly journals Trace metal contamination in mangrove sediments, Guanabara Bay, Rio de Janeiro, Brazil

2007 ◽  
Vol 18 (6) ◽  
pp. 1194-1206 ◽  
Author(s):  
Cassia O. Farias ◽  
Claudia Hamacher ◽  
Angela de Luca R. Wagener ◽  
Reinaldo C. de Campos ◽  
José M. Godoy
Keyword(s):  
Trace Metal ◽  
Metal Contamination ◽  
Rio De Janeiro ◽  
Guanabara Bay ◽  
Mangrove Sediments ◽  
Trace Metal Contamination
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