Impact of municipal solid waste dumpsites on trace metal contamination levels in the surrounding area: a case study in West Africa, Abidjan, Cote d’Ivoire

Author(s):  
Naminata Sangaré Soumahoro ◽  
N’guessan Louis Berenger Kouassi ◽  
Koffi Marcellin Yao ◽  
Edith Kouassi Kwa-Koffi ◽  
Aka Marcel Kouassi ◽  
...  
2020 ◽  
Vol 12 (14) ◽  
pp. 5624
Author(s):  
Huiyun Pan ◽  
Xinwei Lu ◽  
Kai Lei

Trace metal contamination in urban road dust has attracted global concern due to its potential risk to the urban environment and human health. Compared to big cities, relative studies in counties and small towns have not been well quantified. This research identified the trace metal contamination characteristics and possible sources in the road dust of a typical mountainous county and a town in the Three Gorges Reservoir region, southwest China, and their associations with major regional socio-economic factors. The trace metal concentrations were determined, and the contamination levels were assessed. Concentrations of Zn, Pb, and Cu were relatively high in both locations, and a significant accumulation of them was confirmed by the geo-accumulation method. Multivariate analysis and geographic information system (GIS) mapping were combined to explore the sources of trace metals in the investigated area. Anthropogenic activities predominantly affected the contamination levels of Zn, Pb, Cu, and Co, and traffic emission, agricultural activities, and fossil fuel combustion were their main sources. The significant accumulation of Zn should attract special concern for its wide use in industrial and agricultural activities. Population and vehicle density were the main factors that controlled the trace metal contamination levels in the roadway dust. Rapid urbanizing promoted trace metal accumulation in counties and towns. Therefore, it is urgent to make appropriate strategies for trace metal pollution mitigation in the process of urbanization.


1999 ◽  
Vol 606 ◽  
Author(s):  
Joseph Ilardi ◽  
Rajananda Saraswati ◽  
George Schwartzkopf

AbstractAn alkaline aqueous silicon wafer cleaner has been developed which reduces trace metal contamination levels on “p-type” unpatterned silicon wafers to below 1E10 atoms/cm2 without acidic cleaning. This patented technology uses a specially formulated buffering system consisting of an oxidation resistant chelating agent and salt of a weak acid. The aqueous cleaner maintains a stable pH of about 9.5 over a wide range of dilutions, temperatures, hydrogen peroxide concentrations and bath aging times. A single-step bath, megasonic bath or spray clean with this formulation leaves the chemical oxide on the silicon wafer surface free of particles, atomically smooth, free of organics and lower in trace metal contamination levels than similar surfaces cleaned with conventional formulations.An analytical method was developed which allows the reliable detection of trace metals on silicon wafer surfaces down to 1E8 atoms/cm2 for aluminum, calcium, copper, iron, nickel, sodium and zinc. The procedure uses an ICP-MS with a concentric nebulizer and a desolvator. The acids used were ultrapure to keep the blanks to a very minimum and analyses were run in a class 10 clean room. The trace metals on the wafer were extracted using known amounts of ultrapure acids and were directly aspirated using a special arrangement with the concentric nebulizer. The J.T. Baker cleaner was compared to and outperformed the conventional RCA-1&2 clean and dilute RCA-1&2 chemistries using ultrapure ammonium hydroxide, hydrochloric acid and hydrogen peroxide.


Chemosphere ◽  
2013 ◽  
Vol 90 (2) ◽  
pp. 150-157 ◽  
Author(s):  
N. Bodin ◽  
R. N’Gom-Kâ ◽  
S. Kâ ◽  
O.T. Thiaw ◽  
L. Tito de Morais ◽  
...  

2016 ◽  
Vol 2 (2) ◽  
pp. 39-44
Author(s):  
Oscar Cabeza ◽  
◽  
Alfredo Alonso ◽  
Yoel Lastre ◽  
Jorge Medina ◽  
...  

Author(s):  
Yasunori Goto ◽  
Hiroomi Eguchi ◽  
Masaru Iida

Abstract In the automotive IC using thick-film silicon on insulator (SOI) semiconductor device, if the gettering capability of a SOI wafer is inadequate, electrical characteristics degradation by metal contamination arises and the yield falls. At this time, an automotive IC was made experimentally for evaluation of the gettering capability as one of the purposes. In this IC, one of the output characteristics varied from the standard, therefore failure analysis was performed, which found trace metal elements as one of the causes. By making full use of 3D perspective, it is possible to fabricate a site-specific sample into 0.1 micrometre in thickness without missing a failure point that has very minute quantities of contaminant in a semiconductor device. Using energy dispersive X-ray, it is possible to detect trace metal contamination at levels 1E12 atoms per sq cm. that are conventionally detected only by trace element analysis.


2017 ◽  
Vol 19 (3) ◽  
pp. 191 ◽  
Author(s):  
Md. Rezaul Karim ◽  
Megumi Kuraoka ◽  
Takaya Higuchi ◽  
Masahiko Sekine ◽  
Tsuyoshi Imai

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