>1200 V, >50A SILICON CARBIDE SUPER JUNCTION TRANSISTOR
2011 ◽
Vol 2011
(HITEN)
◽
pp. 000104-000107
Keyword(s):
The electrical performance of GeneSiC's 1200 V/7 A SiC Super Junction Transistor (SJT) is compared with three best-in-class commercial Si IGBTs in this paper. Low leakage currents of < 100 μA at 325 °C operating temperature, switching transients < 15 ns at 250 °C, Common Source current gains of 63 and on-resistance as low as 220 mΩ were measured on the SiC SJTs. For switching 7 A, 800 V at 100 kHz, the SiC SJT+GeneSiC SiC Schottky rectifier as Free Wheeling Diode (FWD) achieved a total power loss reduction of about 64% when compared to the best all-Si IGBT+FWD configuration and a power loss reduction of about 47 %, when compared to the best Si IGBT + SiC Schottky FWD.
2019 ◽
Vol 7
(1)
◽
pp. 904-906
Power Loss Reduction Practices in the Supply Area of a Typical Substation in Huangshan City in China
2020 ◽
Vol 1646
◽
pp. 012025