scholarly journals Polarization behavior of an electroless copper plating solution and electron diffraction analysis of deposits.

1991 ◽  
Vol 42 (1) ◽  
pp. 111-115
Author(s):  
Masahiro OITA ◽  
Katsuhiko HONJO
Keyword(s):  
Electron Diffraction ◽  
Diffraction Analysis ◽  
Electron Diffraction Analysis ◽  
Copper Plating ◽  
Electroless Copper Plating ◽  
Polarization Behavior ◽  
Electroless Copper ◽  
Plating Solution

scholarly journals Applying Copper-Ball Dissolution for Prolonging Life of Electroless-Copper-Plating Solution

2016 ◽  
Vol 9 (0) ◽  
pp. E16-001-1-E16-001-10
Author(s):  
Hiroshi Kanemoto ◽  
Toshinori Kawamura ◽  
Takeyuki Itabashi ◽  
Tomoyuki Miyazaki ◽  
Yoshihisa Kaneko
Keyword(s):  
Copper Plating ◽  
Electroless Copper Plating ◽  
Electroless Copper ◽  
Plating Solution

scholarly journals Determination of formaldehyde in electroless copper plating solution by potentiometric titration.

1990 ◽  
Vol 41 (4) ◽  
pp. 412-416
Author(s):  
Shozo MIZUMOTO ◽  
Hidemi NAWAFUNE ◽  
Motoo KAWASAKI ◽  
Akemi KINOSHITA ◽  
Ken ARAKI
Keyword(s):  
Potentiometric Titration ◽  
Copper Plating ◽  
Electroless Copper Plating ◽  
Electroless Copper ◽  
Plating Solution

scholarly journals Development of Formaldehyde Free Electroless Copper Plating Solution.

2002 ◽  
Vol 5 (3) ◽  
pp. 252-256 ◽  
Author(s):  
Takeyuki ITABASHI ◽  
Haruo AKAHOSHI ◽  
Tadashi IIDA ◽  
Eiji TAKAI ◽  
Naoki NISHIMURA
Keyword(s):  
Copper Plating ◽  
Electroless Copper Plating ◽  
Electroless Copper ◽  
Plating Solution

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Computers and diffraction analysis

1989 ◽  
Vol 47 ◽  
pp. 44-45
Author(s):  
J. A. Eades
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Diffraction Analysis ◽  
Electron Diffraction Analysis ◽  
Image Simulation ◽  
Correct Interpretation ◽  
High Profile ◽  
High Resolution Images ◽  
Image Simulations

For well over two decades computers have played an important role in electron microscopy; they now pervade the whole field - as indeed they do in so many other aspects of our lives. The initial use of computers was mainly for large (as it seemed then) off-line calculations for image simulations; for example, of dislocation images.Image simulation has continued to be one of the most notable uses of computers particularly since it is essential to the correct interpretation of high resolution images. In microanalysis, too, the computer has had a rather high profile. In this case because it has been a necessary part of the equipment delivered by manufacturers. By contrast the use of computers for electron diffraction analysis has been slow to prominence. This is not to say that there has been no activity, quite the contrary; however it has not had such a great impact on the field.

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