scholarly journals Characteristics Analysis and Manufacture of Ta2O5Thin Films Prepared by Dual Ion-beam Sputtering Deposition with Change of Ar/O2Gas Flow Rate of Assist Ion Beam

2003 ◽  
Vol 40 (12) ◽  
pp. 1165-1169
Keyword(s):  
Flow Rate ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Characteristics Analysis ◽  
Dual Ion Beam Sputtering

Formation of the crystalline β-C3N4 phase by dual ion beam sputtering deposition

2007 ◽  
Vol 61 (14-15) ◽  
pp. 2855-2858 ◽  
Author(s):  
J.P. Rivière ◽  
D. Texier ◽  
J. Delafond ◽  
M. Jaouen ◽  
E.L. Mathé ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Ultra-low stress high reflective film by dual-ion-beam sputtering deposition

2021 ◽  
Vol 61 (03) ◽  
Author(s):  
Jinlin Bai ◽  
Huasong Liu ◽  
Yugang Jiang ◽  
Lishuan Wang ◽  
Xiao Yang ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Dual ion-beam sputtering deposition of palladium-fluoropolymer nano-composites

2005 ◽  
Vol 80 (4) ◽  
pp. 791-795 ◽  
Author(s):  
I. Farella ◽  
A. Valentini ◽  
N. Cioffi ◽  
L. Torsi
Keyword(s):  
Ion Beam ◽  
Nano Composites ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Investigation on the DLC films prepared by dual-ion beam sputtering deposition

Vacuum ◽  
1991 ◽  
Vol 42 (16) ◽  
pp. 1058
Author(s):  
Wang Tianmin ◽  
Wang WeiJie ◽  
Liu Guiang ◽  
Huang Liangpu ◽  
Luo Chuntai ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Investigation on the DLC films prepared by dual-ion-beam-sputtering deposition

1991 ◽  
Author(s):  
Tianmin Wang ◽  
Weijie Wang ◽  
Guidng Liu ◽  
Liangpu Huang ◽  
Chuntai Luo ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Indium Tin Oxide Thin Films Deposited at Low Temperature Using Dual Ion Beam Sputtering

2014 ◽  
Vol 1699 ◽  
Author(s):  
Wilhelmus J. Geerts ◽  
Nelson A. Simpson ◽  
Alan D. Woodall ◽  
Maclyn Stuart Compton
Keyword(s):  
Flow Rate ◽  
Indium Tin Oxide ◽  
Atomic Oxygen ◽  
Ion Beam ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

ABSTRACTITO samples were sputtered at room temperature by ion assisted dual ion beam sputtering using atomic or molecular oxygen. The electrical properties appear to depend on the oxygen flow rate during deposition and the resistivity decreases for samples sputtered at a higher oxygen flow rate (1-5 sccm). The resistivity is lowest at an oxygen flow rate of 4 sccm. The average absorption in the visible part of the spectrum also decreases as a function of the oxygen flow rate and is lower for samples sputtered with atomic oxygen. The figure of merit, i.e. the ratio of the conductivity versus the average absorption in the visible range, increases for higher oxygen flow rates and is typically 20-60% higher for samples sputtered using an atomic oxygen assist beam.

Influence of Metal Electrode(Ag,Au,Pt) on the Dielectric and Electrical Properties of HfTaO Capacitors

2011 ◽  
Vol 197-198 ◽  
pp. 1757-1765
Author(s):  
Tao Yu ◽  
Xue Mei Wu ◽  
Lan Jian Zhuge
Keyword(s):  
Leakage Current ◽  
Ion Beam ◽  
Metal Electrode ◽  
Flat Band ◽  
Ion Beam Sputtering ◽  
Pt Electrode ◽  
Mos Capacitors ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

HfTaO-based MOS capacitors with different top electrode (Ag、Au、Pt) were successfully fabricated by dual ion beam sputtering deposition (DIBSD). We presented the effect of different metal gate on the capacity, flat band voltage shift, leakage current and conduction mechanism. It has been found that the Pt-electrode capacitor exhibited the highest accumulation capacitance. In addition, the largest hysteresis loop in Pt/HfTaO/Si capacitor during the forward-and-reverse voltage sweeping from +2.5V to -2.5V was observed. The result indicates the presence of a large amount of fixed charges or oxygen vacancies exist in interface Pt/HfTaO, which is consistent with the prediction from Qf results. It is proved that even though Eotof the Pt-electrode capacitor is lower than that of the Ag, Au-electroded, and that of leakage current still has the smallest value at a high electric field due to Pt with a high enough work function Φms(Pt)=5.65eV.

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